摘要:
A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state.
摘要:
A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes dividing write data into a plurality of page data groups, each page data group including multiple bits of data; encoding the divided page data groups using different binary codes, respectively; mapping the encoded page data groups; programming, in first memory cells connected to one word line, programming states to which binary values of each of the mapped encoded page data groups are mapped, such that, the plurality of page data groups correspond respectively to a plurality of read voltage levels, and for each of the plurality of page data groups, the page data group can be read by performing a single read operation on the first memory cells using the read voltage level corresponding to the page data group.
摘要:
A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area.
摘要:
A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.
摘要:
Disclosed is a bit-state mapping method of a flash memory system which maps m-bit data (m being a natural number more than 2) onto one of 2m states (voltage threshold distributions). The bit-state mapping method includes performing a subset partitioning operation during first to (m−1)th levels under a condition that two adjacent states are processed as one state; and distinguishing between the adjacent states while processing an (m)th level.
摘要:
A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.
摘要:
An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.
摘要:
An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.
摘要:
A method and apparatus are described for aligning reception signals and interference signals by a base station (BS) configured to receive a signal from at least one user equipment (UE) in a cellular network. The reception signals are received from UEs belonging to a serving cell of the BS, and the interference signals are received from UEs belonging to a neighbor cell of the BS. A signal space receiving the reception signals and the interference signals is divided into a plurality of divided signal spaces, each having a size of N. K reception signals from among the reception signals are arranged in each divided signal space. The K reception signals arranged in each divided signal space are orthogonal to each other.
摘要:
According to one aspect of the present invention, the present invention provides a method for allowing a base station, which receives signals from one or more terminals, to align receiving signals and interference signals in a wireless access system. Said method comprises the steps of: receiving the receiving signals and the interference signals, wherein said receiving signals are signals which are received from terminals that belong to a serving cell of said base station, and said interference signals are signals which are received from terminals that belong to neighbor cells of said base station; dividing a signal space for receiving said receiving signals and said interference signals into one or more signal spaces of size N; and arranging K receiving signals of said receiving signals in each of said divided signal spaces, wherein said K receiving signals arranged in each of said divided signal spaces are orthogonal to each other.