公开(公告)号：US09093145B2

公开(公告)日：2015-07-28

申请号：US14141609

申请日：2013-12-27

申请人： Eun Chu Oh ,  JunJin Kong ,  Hong Rak Son ,  Younggeon Yoo

发明人： Eun Chu Oh ,  JunJin Kong ,  Hong Rak Son ,  Younggeon Yoo

IPC分类号： G11C7/00 ,  G11C13/00

CPC分类号： G11C13/004 ,  G11C11/16 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0004 ,  G11C2013/0054

摘要： A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state.

摘要翻译： 非易失性随机存取存储器件包括多个存储器单元，其被配置为在其中存储数据，多个参考单元与存储器单元分离，每个参考单元被配置为输出相应的参考单元信号，以及读/写电路。 读/写电路被配置为从参考单元信号产生可变为具有多个不同参考电平的参考信号。 读/写电路还被配置为响应于参考信号识别一个或多个所选择的存储器单元中的每一个的第一逻辑状态和第二逻辑状态之间的逻辑状态，并且输出与所识别的对应的读取数据 逻辑状态。

公开(公告)号：US20150006791A1

公开(公告)日：2015-01-01

申请号：US14297093

申请日：2014-06-05

申请人： Younggeon YOO ,  Junjin KONG ,  Hong Rak SON

发明人： Younggeon YOO ,  Junjin KONG ,  Hong Rak SON

IPC分类号： G06F12/02

CPC分类号： G11C16/10 ,  G06F11/1072 ,  G11C11/5628 ,  G11C16/0483

摘要： A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes dividing write data into a plurality of page data groups, each page data group including multiple bits of data; encoding the divided page data groups using different binary codes, respectively; mapping the encoded page data groups; programming, in first memory cells connected to one word line, programming states to which binary values of each of the mapped encoded page data groups are mapped, such that, the plurality of page data groups correspond respectively to a plurality of read voltage levels, and for each of the plurality of page data groups, the page data group can be read by performing a single read operation on the first memory cells using the read voltage level corresponding to the page data group.

摘要翻译： 一种存储装置的写入方法，包括至少一个非易失性存储器件和控制非易失性存储器件的存储器控​​制器，包括将写入数据划分成多个页数据组，每个页数据组包括多位数据; 分别使用不同的二进制码对分割页数据组进行编码; 映射编码页数据组; 在连接到一个字线的第一存储器单元中对编程状态进行编程，对每个映射编码页数据组的二进制值进行映射的编程状态，使得多个页数据组分别对应于多个读电压电平，以及 对于多个页面数据组中的每一个，可以通过使用与页面数据组对应的读取电压电平对第一存储器单元执行单个读取操作来读取页面数据组。

公开(公告)号：US20160148703A1

公开(公告)日：2016-05-26

申请号：US14883922

申请日：2015-10-15

申请人： KWANGHOON KIM ,  Younggeon Yoo ,  Junjin Kong

发明人： KWANGHOON KIM ,  Younggeon Yoo ,  Junjin Kong

IPC分类号： G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/0483

摘要： An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.

摘要翻译： 根据本发明的示例性实施例的非易失性存储器系统的操作方法包括使用采样开始电压来检测存储器单元的单元计数，将检测到的单元计数与参考值进行比较，设置多个采样 基于比较结果的电压，使用采样电压对存储单元执行采样操作，并且基于采样操作的结果，检测用于区分程序状态中的任何一个程序状态的最佳读取电压。

公开(公告)号：US09183138B2

公开(公告)日：2015-11-10

申请号：US14053893

申请日：2013-10-15

申请人： Younggeon Yoo ,  Junjin Kong ,  Changkyu Seol ,  Hong Rak Son ,  Hyunseuk Yoo

发明人： Younggeon Yoo ,  Junjin Kong ,  Changkyu Seol ,  Hong Rak Son ,  Hyunseuk Yoo

IPC分类号： G06F12/02 ,  G11C16/10 ,  G11C13/00

CPC分类号： G06F12/0246 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0069 ,  G11C16/10 ,  G11C2013/0076

摘要： A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.

摘要翻译： 一种在非易失性存储器件中编程数据的方法包括：接收要在非易失性存储器件的选定存储器单元中编程的程序数据，从所选择的存储器单元读取数据，使用从多个编码中选择的至少一种编码方案对程序数据进行编码 根据程序数据和读取数据的比较，生成包括编码信息的标志数据，以及对选择的存储单元中的编码程序数据和标志数据进行编程的方案。

公开(公告)号：US20140185361A1

公开(公告)日：2014-07-03

申请号：US14141609

申请日：2013-12-27

申请人： EUN CHO OH ,  HONG RAK SON ,  HONG RAK SON ,  YOUNGGEON YOO

发明人： EUN CHO OH ,  HONG RAK SON ,  HONG RAK SON ,  YOUNGGEON YOO

IPC分类号： G11C13/00

CPC分类号： G11C13/004 ,  G11C11/16 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0004 ,  G11C2013/0054

摘要： A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state.

摘要翻译： 非易失性随机存取存储器件包括多个存储器单元，其被配置为在其中存储数据，多个参考单元与存储器单元分离，每个参考单元被配置为输出相应的参考单元信号，以及读/写电路。 读/写电路被配置为从参考单元信号产生可变为具有多个不同参考电平的参考信号。 读/写电路还被配置为响应于参考信号识别一个或多个所选择的存储器单元中的每一个的第一逻辑状态和第二逻辑状态之间的逻辑状态，并且输出与所识别的对应的读取数据 逻辑状态。

公开(公告)号：US09601205B2

公开(公告)日：2017-03-21

申请号：US14297093

申请日：2014-06-05

申请人： Younggeon Yoo ,  Junjin Kong ,  Hong Rak Son

发明人： Younggeon Yoo ,  Junjin Kong ,  Hong Rak Son

IPC分类号： G06F12/02 ,  G11C16/10 ,  G06F11/10 ,  G11C11/56 ,  G11C16/04

CPC分类号： G11C16/10 ,  G06F11/1072 ,  G11C11/5628 ,  G11C16/0483

摘要： A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes dividing write data into a plurality of page data groups, each page data group including multiple bits of data; encoding the divided page data groups using different binary codes, respectively; mapping the encoded page data groups; programming, in first memory cells connected to one word line, programming states to which binary values of each of the mapped encoded page data groups are mapped, such that, the plurality of page data groups correspond respectively to a plurality of read voltage levels, and for each of the plurality of page data groups, the page data group can be read by performing a single read operation on the first memory cells using the read voltage level corresponding to the page data group.

公开(公告)号：US09355701B2

公开(公告)日：2016-05-31

申请号：US14179614

申请日：2014-02-13

申请人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

发明人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

IPC分类号： G11C11/16 ,  G11C11/22 ,  G11C13/00 ,  G11C29/04 ,  G11C7/10

CPC分类号： G11C11/1675 ,  G11C7/1006 ,  G11C11/2275 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2029/0411

摘要： A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.

摘要翻译： 提供了一种非易失性存储器件的数据写入方法，包括接收要存储在所选存储器单元中的写数据; 读取存储在所选存储单元中的数据; 根据多个数据调制方式处理写入数据以产生多个调制数据值; 当选择的存储单元写入写入数据和多个调制数据值时，计算翻转位数和切换位数，每个翻转位指示所选存储单元的逻辑值相反，并且每个开关位 指示所选存储单元的逻辑值从第一逻辑值切换到第二逻辑值; 以及根据计算翻转位数和切换位数来选择写入数据和多个调制数据值之一。

公开(公告)号：US20140115237A1

公开(公告)日：2014-04-24

申请号：US14053893

申请日：2013-10-15

申请人： YOUNGGEON YOO ,  JUNJIN KONG ,  CHANGKYU SEOL ,  HONG RAK SON ,  HYUNSEUK YOO

发明人： YOUNGGEON YOO ,  JUNJIN KONG ,  CHANGKYU SEOL ,  HONG RAK SON ,  HYUNSEUK YOO

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0069 ,  G11C16/10 ,  G11C2013/0076

摘要： A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.

摘要翻译： 一种在非易失性存储器件中编程数据的方法包括：接收要在非易失性存储器件的选定存储器单元中编程的程序数据，从所选择的存储器单元读取数据，使用从多个编码中选择的至少一种编码方案对程序数据进行编码 根据程序数据和读取数据的比较，生成包括编码信息的标志数据，以及对选择的存储单元中的编码程序数据和标志数据进行编程的方案。

公开(公告)号：US09478300B2

公开(公告)日：2016-10-25

申请号：US14883922

申请日：2015-10-15

申请人： Kwanghoon Kim ,  Younggeon Yoo ,  Junjin Kong

发明人： Kwanghoon Kim ,  Younggeon Yoo ,  Junjin Kong

IPC分类号： G11C11/34 ,  G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/0483

摘要： An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.

摘要翻译： 根据本发明的示例性实施例的非易失性存储器系统的操作方法包括使用采样开始电压来检测存储器单元的单元计数，将检测到的单元计数与参考值进行比较，设置多个采样 基于比较结果的电压，使用采样电压对存储单元执行采样操作，并且基于采样操作的结果，检测用于区分程序状态中的任何一个程序状态的最佳读取电压。

公开(公告)号：US09274721B2

公开(公告)日：2016-03-01

申请号：US14206269

申请日：2014-03-12

申请人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son ,  Younggeon Yoo

发明人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son ,  Younggeon Yoo

IPC分类号： G06F3/06

CPC分类号： G06F3/0655 ,  G06F3/0604 ,  G06F3/0679 ,  G11C7/1006 ,  G11C7/14 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/004 ,  G11C16/26 ,  G11C2013/0054

摘要： A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area.

摘要翻译： 包括数据单元区域和参考单元区域的非易失性存储器件的数据管理方法包括从输入到存储器件的写入数据中选择共享数据; 基于共享数据生成参考数据; 并将写入数据存储在数据单元区域和参考单元区域的第一参考区域中; 并将参考数据存储在参考小区区域的第二参考区域中。