摘要:
A method of fabricating gate level electrodes and interconnects in an integrated circuit, and an integrated circuit so fabricated, with improved process margin for the gate level interconnects of a width near the critical dimension. Off-axis illumination, as used in the photolithography of deep sub-micron critical dimension, is facilitated by the patterned features having a preferred orientation in a common direction, with a pitch constrained to within a relatively narrow range. Interconnects in that same gate level, for example “field poly” interconnects, that run parallel to an array of gate elements are placed within a specified distance range from the ends of the gate elements, or at a distance sufficient to allow sub-resolution assist features.
摘要:
There are provided a method of manufacturing a ceramic sintered body. A method of manufacturing a ceramic sintered body according to one aspect of the invention may include: preparing at least one ceramic sheet having first ceramic particles and glass particles; preparing at least one constraining sheet having second ceramic particles having a smaller particle size than the glass particles and the first ceramic particles; forming a ceramic laminate by alternating the ceramic sheet and the constraining sheet while the ceramic sheet and the constraining sheet are in contact with each other; and sintering the ceramic laminate so that components, which do not react with the first ceramic particles, from the glass particle are moved into the constraining sheet to sinter the constraining sheet when the ceramic sheet is sintered.
摘要:
There are provided a method of manufacturing a ceramic sintered body. A method of manufacturing a ceramic sintered body according to one aspect of the invention may include: preparing at least one ceramic sheet having first ceramic particles and glass particles; preparing at least one constraining sheet having second ceramic particles having a smaller particle size than the glass particles and the first ceramic particles; forming a ceramic laminate by alternating the ceramic sheet and the constraining sheet while the ceramic sheet and the constraining sheet are in contact with each other; and sintering the ceramic laminate so that components, which do not react with the first ceramic particles, from the glass particle are moved into the constraining sheet to sinter the constraining sheet when the ceramic sheet is sintered.
摘要:
A method of fabricating a ceramic substrate includes: preparing a firing theta; forming a ceramic laminated body comprising at least one internal confinement layer on the ceramic theta; providing a temperature-compensation ceramic layer on at least one of a top surface of the ceramic laminated body and a bottom surface of the ceramic laminated body contacting the firing theta, the temperature-compensation ceramic layer having a different initial firing shrinkage temperature than the ceramic laminated body; and firing the ceramic laminated body.
摘要:
Exemplary embodiments provide a tri-layer resist (TLR) stack used in a photolithographic process, and methods for resist reworking by a single plasma etch process. The single plasma etch process can be used to remove one or more portions/layers of the TLR stack that needs to be reworked in a single process. The removed portions/layers can then be re-formed and resulting in a reworked TLR stack for subsequent photo-resist (PR) processing. The disclosed plasma-etch resist rework method can be a fast, simple, and cost effective process used in either single or dual damascene tri-layer patterning processes for the fabrication of, for example, sub 45-nm node semiconductor structures.
摘要:
A method of manufacturing a capacitor-embedded low temperature co-fired ceramic substrate. A capacitor part is manufactured by firing a deposition including at least one high dielectric ceramic sheet to form a capacitor part. A plurality of low temperature co-fired green sheets are provided. Each of the low temperature co-fired green sheet has at least one of a conductive pattern and a conductive via hole thereon. A low temperature co-fired ceramic deposition is formed by depositing the low temperature co-fired green sheets to embed the capacitor part in the low temperature co-fired ceramic deposition. The embedded capacitor part is connected either to the conductive pattern or the conductive via hole of an adjacent green sheet. Then the low temperature co-fired ceramic deposition having the capacitor part embedded therein is fired.
摘要:
A method of manufacturing a multilayer ceramic substrate having a cavity includes preparing a first ceramic laminate having an opening for forming a cavity, and a second ceramic laminate which is to be provided on a bottom surface of the first ceramic laminate, forming a polymer layer in a region corresponding at least to the opening, on a top surface of the second ceramic laminate, forming a desired multilayer ceramic laminate by laminating the first and second ceramic laminates such that the polymer layer of the second ceramic laminate is placed under the opening, laminating first and second constraining layers on a top surface and a bottom surface of the multilayer ceramic laminate, respectively, and sintering the multilayer ceramic laminate including the laminated first and second constraining layers. Accordingly, the strength of a low temperature co-fired ceramic (LTCC) substrate having a cavity is enhanced, and an effective area for mounting built-in devices can be increased.
摘要:
A system and method of preventing pattern lifting during a trench etch/clean process is disclosed. A first layer comprising a first dip is formed over a first via pattern. A trench resist layer is formed. The trench resist layer is patterned with a trench reticle to produce a second via pattern in the trench resist layer over the first via pattern. A photo resist over the first via pattern is opened during a trench processing. Thus, an additional pattern added on a trench pattern reticle is used to open, i.e., remove resist over, a huge via feature area causing under layer dip.
摘要:
Provided is an image display device capable of adjusting brightness. The image display device includes a brightness determining unit that determines the brightness of image data, applied from outside, so as to output a backlight selection signal and a contrast selection signal; a backlight control unit that is connected to the brightness determining unit and outputs a backlight driving voltage for supplying backlight with brightness corresponding to the backlight selection signal; a contrast control unit that is connected to the brightness determining unit and outputs an image output signal for outputting an image of which the contrast is adjusted to correspond to the contrast selection signal; and an image display unit that is connected to the backlight control unit and the contrast control unit and receives the backlight driving voltage and the image output signal so as to display an image in which the brightness of the backlight and the contrast of the image data are respectively adjusted.
摘要:
The present disclosure is directed to a method for monitoring focus of a photolithography system. The method comprises providing a substrate and depositing a photoresist layer on the substrate. At least one photomask is provided comprising one or more forbidden pitch photomask patterns formed thereon. The forbidden pitch patterns are imaged in the photoresist layer by exposing the photoresist layer to radiation through the at least one photomask. The imaged forbidden pitch patterns are developed in the photoresist. Focus error information regarding the imaging process can be determined using the developed forbidden pitch patterns.