公开(公告)号：US06914279B2

公开(公告)日：2005-07-05

申请号：US10456050

申请日：2003-06-06

申请人： Yicheng Lu ,  Zheng Zhang ,  Nuri William Emanetoglu ,  Masayori Inouye ,  Oleg Mirochnitchenko

发明人： Yicheng Lu ,  Zheng Zhang ,  Nuri William Emanetoglu ,  Masayori Inouye ,  Oleg Mirochnitchenko

IPC分类号： C12Q1/68 ,  G01N21/64 ,  G01N27/00 ,  G01N27/12 ,  G01N27/414 ,  G01N29/02 ,  G01N33/543 ,  H01L29/82

CPC分类号： G01N21/6428 ,  C12Q1/6825 ,  C12Q1/6837 ,  G01N27/4145 ,  G01N27/4146 ,  G01N29/022 ,  G01N33/54373 ,  G01N33/5438 ,  G01N2021/6432 ,  G01N2291/011 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  C12Q2565/501 ,  C12Q2565/607

摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on ZnO nanostructures. The ZnO nanotips serve as strong DNA or protein molecule binding sites to enhance the immobilization. Patterned ZnO nanotips are used to provide conductivity-based biosensors. Patterned ZnO nanotips are also used as the gate for field-effect transistor (FET) type sensors. Patterned ZnO nanotips are integrated with SAW or BAW based biosensors. These ZnO nanotip based devices operate in multimodal operation combining electrical, acoustic and optical sensing mechanisms. The multifunctional biosensors can be arrayed and combined into one biochip, which will enhance the sensitivity and accuracy of biological and biochemical detection due to strong immobilization and multimodal operation capability. Such biological and biochemical sensor technology are useful in detection of RNA-DNA, DNA-DNA, protein-protein, protein-DNA and protein-small molecules interaction. It can be further applied for drug discovery, and for environmental monitoring and protection.

摘要翻译： 本发明提供了基于ZnO纳米结构的多功能生物和生物化学传感器技术。 ZnO纳米尖端作为强的DNA或蛋白质分子结合位点来增强固定。 图案化的ZnO纳米尖端用于提供基于导电性的生物传感器。 图案化的ZnO纳米技术也用作场效应晶体管（FET）型传感器的栅极。 图案化的ZnO纳米片与SAW或基于BAW的生物传感器集成。 这些基于ZnO纳米管的器件在电气，声学和光学感测机构的多模式操作中工作。 多功能生物传感器可以排列并组合成一个生物芯片，由于强固定和多模态操作能力，提高了生物和生化检测的灵敏度和准确性。 这种生物和生化传感器技术可用于RNA-DNA，DNA-DNA，蛋白质 - 蛋白质，蛋白质 - DNA和蛋白质 - 小分子相互作用的检测。 可进一步应用于药物发现，环境监测和保护。

公开(公告)号：US06716479B2

公开(公告)日：2004-04-06

申请号：US10266130

申请日：2002-10-07

申请人： Yicheng Lu ,  Nuri William Emanetoglu

发明人： Yicheng Lu ,  Nuri William Emanetoglu

IPC分类号： B05D512

CPC分类号： C30B29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L41/187

摘要： The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.

摘要翻译： 本发明提供了通过使ZnO和MgO合金形成的作为新的压电材料的氧化镁锌（Mg x Zn 1-x O）。 MgxZn1-xO允许薄膜SAW和BAW器件设计的灵活性，因为其压电性能可以通过控制Mg含量以及通过使用MgxZn1-xO / ZnO多层结构来定制。 为了进行实验证明，通过金属有机化学气相沉积，MgXZn1-xO（x <= 0.35）薄膜通过在450℃-500℃范围内的温度在r面蓝宝石衬底上生长。 Mg摩尔％至0.35的MgxZn1-xO薄膜具有外延质量和纤锌矿晶体结构。 SAW特性，包括速度色散和压电耦合，其特征和结论是声速增加，而压电耦合随压电MgxZn1-xO薄膜中Mg摩尔百分数的增加而减小。

公开(公告)号：US06979489B2

公开(公告)日：2005-12-27

申请号：US10243269

申请日：2002-09-13

申请人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri William Emanetoglu

发明人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri William Emanetoglu

IPC分类号： C30B25/02 ,  H01J1/304 ,  H01J9/02 ,  B32B15/00 ,  B32B9/04 ,  B32B3/00

CPC分类号： B82Y30/00 ,  B82Y15/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/60 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/811 ,  Y10T428/24802 ,  Y10T428/24917

摘要： In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01{overscore (1)}2) Al2O3 substrates as long as the ZnO grows in a columnar stucture along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.

摘要翻译： 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由R平面上沉积的半导体，绝缘体或金属制成的图案化的层或岛上（01（过滤（12）Al 2 O 2 只要ZnO沿着这些材料上的ZnO的c轴[0001]在柱状结构中生长，这些自组装的ZnO纳米尖端和纳米尖端阵列对于在场发射显示器和电子发射中的应用是有希望的 光源带隙器件，近场显微镜，紫外光电子学和生物化学传感器。

公开(公告)号：US06846731B2

公开(公告)日：2005-01-25

申请号：US10158540

申请日：2002-05-30

申请人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong

发明人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/112 ,  H01L21/28

CPC分类号： H01L31/0392 ,  H01L31/022408 ,  H01L31/108 ,  H01L31/1123 ,  Y02E10/50

摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

摘要翻译： 在本发明中，提供了在n型ZnO和Mg x Zn 1-x O外延膜上制造的肖特基UV光电探测器等半导体器件。 ZnO和MgxZn1-xO膜在R平面蓝宝石衬底上生长，肖特基二极管分别用银和铝作为肖特基和欧姆接触金属制作在ZnO和Mg x Zn 1-x O膜上。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

公开(公告)号：US07400030B2

公开(公告)日：2008-07-15

申请号：US11042533

申请日：2005-01-25

申请人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong ,  Shaohua Liang

发明人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong ,  Shaohua Liang

IPC分类号： H01L29/04

CPC分类号： H01L31/0392 ,  H01L31/022408 ,  H01L31/108 ,  H01L31/1123 ,  Y02E10/50

摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

摘要翻译： 在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

公开(公告)号：US07989851B2

公开(公告)日：2011-08-02

申请号：US11600556

申请日：2006-11-16

申请人： Yicheng Lu ,  Ying Chen ,  Zheng Zhang

发明人： Yicheng Lu ,  Ying Chen ,  Zheng Zhang

IPC分类号： H01L29/82 ,  H03H9/56

CPC分类号： G01N29/036 ,  B82Y5/00 ,  B82Y15/00 ,  C12Q1/6825 ,  C12Q1/6837 ,  G01N21/6428 ,  G01N27/4145 ,  G01N29/022 ,  G01N33/54373 ,  G01N33/5438 ,  G01N2021/6432 ,  G01N2291/011 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  C12Q2565/501 ,  C12Q2565/607

摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on the integration of ZnO nanotips with bulk acoustic wave (BAW) devices, particularly, quartz crystal microbalance (QCM) and thin film bulk acoustic wave resonator (TFBAR). ZnO nanotips provide giant effective surface area and strong bonding sites. Furthermore, the controllable wettability of ZnO nanostructured surface dramatically reduces the liquid consumption and enhances the sensitivity of the biosensor device.

摘要翻译： 本发明提供了基于ZnO纳米片与体声波（BAW）器件，特别是石英晶体微天平（QCM）和薄膜体声波谐振器（TFBAR）的集成的多功能生物和生物化学传感器技术。 ZnO纳米片提供巨大的有效表面积和强结合位置。 此外，ZnO纳米结构表面的可润湿性显着降低了液体消耗，提高了生物传感器的灵敏度。

公开(公告)号：US20070151508A1

公开(公告)日：2007-07-05

申请号：US11311092

申请日：2005-12-19

申请人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri Emanetoglu

发明人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri Emanetoglu

IPC分类号： C30B25/00 ,  C23C16/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： B82Y30/00 ,  B82Y15/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/60 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/811 ,  Y10T428/24802 ,  Y10T428/24917

摘要： In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01 12) Al2O3 substrates as long as the ZnO grows in a columnar structure along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.

摘要翻译： 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装的ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由半导体，绝缘体或沉积在R平面上的金属（01 12）Al 2 / 只要ZnO沿着这些材料上的ZnO的c轴[0001]以柱状结构生长，就可以进行。 这种自组装的ZnO纳米片和纳米尖端阵列对于场发射显示器和电子发射源，光子带隙器件，近场显微镜，UV光电子学和生物化学传感器的应用是有希望的。

公开(公告)号：US07053523B1

公开(公告)日：2006-05-30

申请号：US10774645

申请日：2004-02-02

申请人： Arthur Ballato ,  Richard H. Wittstruck ,  Xiaojun Tong ,  Yicheng Lu

发明人： Arthur Ballato ,  Richard H. Wittstruck ,  Xiaojun Tong ,  Yicheng Lu

IPC分类号： H03H9/145 ,  H03H9/25

CPC分类号： H03H9/02228 ,  H03H9/02086 ,  H03H9/17

摘要： An Interdigital Bulk Acoustic-Wave Transducer (IBAT) device is provided with pairs of exciting electrode fingers disposed sufficiently close together on the piezoelectric substrate and dielectric coating over the exciting electrode fingers to generate an IC-compatible voltage at relatively high electric field strength, resulting in a reduced region of excitation and uniform electric field strength distribution. The IBAT advantageously produces a lateral electric field substantially uniform over a substantial portion of the active BAW structure area, reducing, or virtually eliminating sharp voltage spikes, an electrical field produced by the low voltages resident on integrated circuit (IC) chips, usually of a magnitude of 10 volts, or lower, the planar electrode structure being compatible with IC processing techniques, such as photolithography and the BAWs produced thereby being essentially plane waves, with propagation away from, but with phase progression substantially parallel to, the substrate surface. Numerous IBAT structural arrangements are possible by advantageously over-coating the IBAT electrode finger stripes with an insulating dielectric in different configurations, and any possible configuration achieved through over-coating is considered to be within the contemplation of the devices and methods of the present invention. Interdigital bulk acoustic wave transducers and methods for exciting bulk acoustic waves with interdigital electrode fingers are also provided.

摘要翻译： 交叉散音声波传感器（IBAT）装置设置有一对在压电基片上充分靠近的激励电极指状物和在激发电极指上的电介质涂层，以在较高的电场强度下产生IC兼容的电压，从而产生 在激励和均匀电场强度分布的减少区域。 IBAT有利地产生在主动BAW结构区域的大部分上基本上均匀的横向电场，减少或实际上消除了尖锐的电压尖峰，这是由驻留在集成电路（IC）芯片上的低电压产生的电场，通常为 10伏特或更低的平面电极结构与IC处理技术（例如光刻法）兼容，并且由此产生的BAW基本上是平面波，其传播远离基本表面但基本平行于相位进展。 可以通过有利地用不同结构的绝缘电介质覆盖IBAT电极指状条来实现许多IBAT结构布置，并且通过过涂覆实现的任何可能的构造被认为在本发明的装置和方法的考虑之内。 还提供叉指体积声波换能器和用于激发具有叉指电极指的体声波的方法。

公开(公告)号：US06366389B1

公开(公告)日：2002-04-02

申请号：US09638156

申请日：2000-08-15

申请人： Michael Wraback ,  Paul H. Shen ,  Shaohua Liang ,  Chandrasekhar R. Gorla ,  Yicheng Lu

发明人： Michael Wraback ,  Paul H. Shen ,  Shaohua Liang ,  Chandrasekhar R. Gorla ,  Yicheng Lu

IPC分类号： G02F107

CPC分类号： B82Y20/00 ,  G02F1/0126 ,  G02F1/3515 ,  G02F1/3523 ,  G02F1/3556

摘要： A high contrast ultrahigh speed optically-addressed ultraviolet light modulator exploits the optical anisotropy in a ZnO film epitaxially grown on (01 {overscore (1)}2) sapphire. This device, which could also be realized in a ZnO bulk crystal or similar wide bandgap material, achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation in a preferred embodiment is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and decays to a quasi-equilibrium value within 100 ps.

摘要翻译： 高对比度超高速光学寻址紫外光调制器利用在（01 {overscore（1）} 2）蓝宝石外延生长的ZnO膜中的光学各向异性。 该器件也可以在ZnO体晶或类似的宽带隙材料中实现，通过利用由飞秒紫外脉冲产生的最低激子谐振附近的各向异性吸收和伴随的超快速偏振旋转的各向异性漂白，实现高对比度和高速度 。 在优选实施例中的结果调制的特征在于对应于12°的动态极化旋转的70:1的对比度，并且在100ps内衰减到准平衡值。

公开(公告)号：US08835756B2

公开(公告)日：2014-09-16

申请号：US11963757

申请日：2007-12-21

申请人： Yicheng Lu ,  Aurelien Du Pasquier ,  Hanhong Chen

发明人： Yicheng Lu ,  Aurelien Du Pasquier ,  Hanhong Chen

IPC分类号： H01L31/0224 ,  C23C16/40 ,  H01G9/20 ,  H01L51/42 ,  B82Y10/00 ,  H01L51/44 ,  H01L31/18 ,  H01L51/00

CPC分类号： H01L31/022466 ,  B82Y10/00 ,  H01G9/204 ,  H01G9/2059 ,  H01L31/022483 ,  H01L31/1884 ,  H01L51/0036 ,  H01L51/0047 ,  H01L51/0078 ,  H01L51/0083 ,  H01L51/0086 ,  H01L51/4233 ,  H01L51/4266 ,  H01L51/442 ,  Y02E10/542 ,  Y02E10/549

摘要： A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided.

摘要翻译： 基板负载的光电极，其包括由基板支撑的基本上二维的透明导电氧化物（TCO）膜，其中所述膜掺杂有III族的至少一种元素，以及一种或多种单晶基本一维纳米结构 其与膜成一体并从其上生长而没有其间的边界层，其中膜和纳米结构在组成上基本相同并且包括氧化锌或氧化锌合金。 还提供了制备底物负载的光电极和包含基板负载的光电极的太阳能电池的方法。