公开(公告)号：US07123506B2

公开(公告)日：2006-10-17

申请号：US10860902

申请日：2004-06-03

Applicant: Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

Inventor： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

Abstract translation: 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US20050180201A1

公开(公告)日：2005-08-18

申请号：US10860902

申请日：2004-06-03

Applicant: Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

Inventor： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC: G11C11/00 ,  G11C11/16

CPC classification number: G11C11/16

Abstract: A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

Abstract translation: 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US07443707B2

公开(公告)日：2008-10-28

申请号：US11732073

申请日：2007-04-02

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。 在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层 它实际上并没有被选中，也提供了抗热搅拌的稳定性。

公开(公告)号：US20070184561A1

公开(公告)日：2007-08-09

申请号：US11732073

申请日：2007-04-02

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: H01L21/00

CPC classification number: G11C11/16

Abstract: A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。 在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层 它实际上并没有被选中，也提供了抗热搅拌的稳定性。

公开(公告)号：US20050219895A1

公开(公告)日：2005-10-06

申请号：US10818581

申请日：2004-04-06

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: H01L27/105 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00 ,  G11C11/15

CPC classification number: G11C11/16

Abstract: An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US20050048674A1

公开(公告)日：2005-03-03

申请号：US10781479

申请日：2004-02-17

Applicant: Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

Inventor： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC: H01F20060101 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC classification number: H01L27/228 ,  B82Y10/00 ,  H01L43/08

Abstract: A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

Abstract translation: 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US07211874B2

公开(公告)日：2007-05-01

申请号：US10818581

申请日：2004-04-06

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: H01L29/82

CPC classification number: G11C11/16

Abstract: An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US07009266B2

公开(公告)日：2006-03-07

申请号：US10781479

申请日：2004-02-17

Applicant: Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

Inventor： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC: H01L29/82 ,  H01L43/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  H01L43/08

Abstract: A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

Abstract translation: 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US07394123B2

公开(公告)日：2008-07-01

申请号：US11438179

申请日：2006-05-22

Applicant: Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

Inventor： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: G11C11/1657 ,  G11C11/161 ,  G11C11/1659

Abstract: An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.

Abstract translation: 在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。 因此，线和无细胞层之间存在均匀的间隔。

公开(公告)号：US20060014306A1

公开(公告)日：2006-01-19

申请号：US10892668

申请日：2004-07-16

Applicant: Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

Inventor： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC: H01L21/00

CPC classification number: G11C11/1657 ,  G11C11/161 ,  G11C11/1659

Abstract: An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

Abstract translation: 在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。