公开(公告)号：US07123506B2

公开(公告)日：2006-10-17

申请号：US10860902

申请日：2004-06-03

Applicant: Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

Inventor： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

Abstract translation: 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US20050180201A1

公开(公告)日：2005-08-18

申请号：US10860902

申请日：2004-06-03

Applicant: Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

Inventor： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC: G11C11/00 ,  G11C11/16

CPC classification number: G11C11/16

Abstract: A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

Abstract translation: 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US20050219895A1

公开(公告)日：2005-10-06

申请号：US10818581

申请日：2004-04-06

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: H01L27/105 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00 ,  G11C11/15

CPC classification number: G11C11/16

Abstract: An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US20050048674A1

公开(公告)日：2005-03-03

申请号：US10781479

申请日：2004-02-17

Applicant: Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

Inventor： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC: H01F20060101 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC classification number: H01L27/228 ,  B82Y10/00 ,  H01L43/08

Abstract: A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

Abstract translation: 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US07443707B2

公开(公告)日：2008-10-28

申请号：US11732073

申请日：2007-04-02

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。 在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层 它实际上并没有被选中，也提供了抗热搅拌的稳定性。

公开(公告)号：US20070184561A1

公开(公告)日：2007-08-09

申请号：US11732073

申请日：2007-04-02

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: H01L21/00

CPC classification number: G11C11/16

Abstract: A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。 在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层 它实际上并没有被选中，也提供了抗热搅拌的稳定性。

公开(公告)号：US07211874B2

公开(公告)日：2007-05-01

申请号：US10818581

申请日：2004-04-06

Applicant: Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

Inventor： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC: H01L29/82

CPC classification number: G11C11/16

Abstract: An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

Abstract translation: 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US07009266B2

公开(公告)日：2006-03-07

申请号：US10781479

申请日：2004-02-17

Applicant: Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

Inventor： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC: H01L29/82 ,  H01L43/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  H01L43/08

Abstract: A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

Abstract translation: 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US08728825B2

公开(公告)日：2014-05-20

申请号：US13417398

申请日：2012-03-12

Applicant: Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

Inventor： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC: G01N27/00

CPC classification number: G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

Abstract: A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

Abstract translation: GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响 磁层的磁致伸缩产生补偿横向磁各向异性。 通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

公开(公告)号：US07499314B2

公开(公告)日：2009-03-03

申请号：US12002161

申请日：2007-12-14

Applicant: Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

Inventor： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC: G11C11/00

CPC classification number: G11C7/14 ,  G11C11/16

Abstract: An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

Abstract translation: MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。