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1.发明公开公开(公告)号：US20240087785A1
公开(公告)日：2024-03-14
申请号：US17944516
申请日：2022-09-14
CPC分类号： H01F10/3272 , G01R33/093 , G01R33/098 , H01L27/222 , H01L43/10 , G11B5/3906
摘要： The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.
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公开(公告)号：US20210390977A1
公开(公告)日：2021-12-16
申请号：US17463358
申请日：2021-08-31
发明人： James Mac FREITAG , Zheng GAO , Susumu OKAMURA , Brian R. YORK
IPC分类号： G11B5/147 , G11B11/105 , G11B5/31
摘要： Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.
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公开(公告)号：US20230410841A1
公开(公告)日：2023-12-21
申请号：US17845797
申请日：2022-06-21
IPC分类号： G11B5/31
CPC分类号： G11B5/3116 , G11B5/314
摘要： The present disclosure generally relates to a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield of the magnetic recording head. The spintronic device comprises a multilayer spacer layer comprising a Cu layer in contact with a spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn. A multilayer notch comprising a CoFe layer is disposed over the spin transparent texture layer of the multilayer spacer layer and a Heusler alloy layer is disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe. The multilayer spacer layer and the multilayer notch result in the spintronic device having a high spin polarization and a reduced critical current.
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公开(公告)号：US20230410840A1
公开(公告)日：2023-12-21
申请号：US17845809
申请日：2022-06-21
IPC分类号： G11B5/115
CPC分类号： G11B5/115
摘要： The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.
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5.发明申请公开(公告)号：US20220148619A1
公开(公告)日：2022-05-12
申请号：US17649246
申请日：2022-01-28
摘要： Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.
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6.发明申请公开(公告)号：US20210407534A1
公开(公告)日：2021-12-30
申请号：US16912509
申请日：2020-06-25
摘要： Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.
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7.发明公开公开(公告)号：US20240107893A1
公开(公告)日：2024-03-28
申请号：US17951596
申请日：2022-09-23
CPC分类号： H01L43/08 , G01R33/093 , G11B5/3909 , G11C11/161 , H01F10/325 , H01F10/3272 , H01L27/222 , H01L43/10 , G11B2005/3996
摘要： The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.
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公开(公告)号：US20200372929A1
公开(公告)日：2020-11-26
申请号：US16991971
申请日：2020-08-12
发明人： Quang LE , Yongchul AHN , Susumu OKAMURA , Zheng GAO , Alexander GONCHAROV , Muhammad ASIF BASHIR , Petrus Antonius VAN DER HEIJDEN , James Mac FREITAG
摘要： The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.
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公开(公告)号：US20200013429A1
公开(公告)日：2020-01-09
申请号：US16572551
申请日：2019-09-16
摘要： A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.
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公开(公告)号：US20240194221A1
公开(公告)日：2024-06-13
申请号：US18227537
申请日：2023-07-28
发明人： Yuankai ZHENG , Susumu OKAMURA , Brian R. YORK , Zhitao DIAO , James Mac FREITAG
CPC分类号： G11B5/3146 , G11B5/314 , G11B5/3929
摘要： Embodiments of the present disclosure generally relate to a read sensor utilized in a read head. The read sensor comprises an amorphous break layer disposed on a shield, a seed layer disposed on the amorphous break layer, a first ferromagnetic layer disposed on the seed layer, a barrier layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the barrier layer. The amorphous break layer comprises CoFeBTa, the seed layer comprises RuAl, and the barrier layer comprises a semiconductor material, such as ZnSe, ZnTe, ZnO, CuSe, or CuInGaSe. The semiconductor barrier layer reduces the resistance-area product of the read sensor. The amorphous break layer breaks the texture between the shield, which has a FCC texture, and the seed layer, which has a BCC texture. The BCC texture of the seed layer is then inherited by the remaining layers disposed over the seed layer.
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