SPINTRONIC DEVICE COMPRISING DUAL FGL AND DUAL SPL TO REDUCE PERPENDICULAR FIELD AT WRITING LOCATION

    公开(公告)号:US20240144963A1

    公开(公告)日:2024-05-02

    申请号:US18226111

    申请日:2023-07-25

    CPC classification number: G11B5/3116 G11B5/314

    Abstract: The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole, a hot seed layer, and a spintronic device disposed between the main pole and the hot seed layer. The spintronic device comprises two field generation layers (FGLs), two spin polarization layers (SPLs), and two spin kill layers. The second SPL of the spintronic device drives the second FGL. The spintronic device further comprises one or more optional thin negative beta material layers, such as layers comprising FeCr, disposed in contact with at least one of the spin kill layers. When electric current is applied, the spin kill layers and optional negative beta material layers eliminate or reduce any spin torque between the FGLs and the SPLs.

    Method to Enhance Spin Torque Layer Performance in a Spintronic Device

    公开(公告)号:US20240135966A1

    公开(公告)日:2024-04-25

    申请号:US18226114

    申请日:2023-07-24

    CPC classification number: G11B5/315 G11B5/314

    Abstract: The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole (MP), a shield, and a spintronic device disposed between the MP and the shield. The spintronic device comprises a MP notch disposed on the MP, a first spin torque layer (STL), a second STL, a spin kill layer disposed between the first and second STLs, and a shield notch. The spin kill layer prevents spin torque from being transferred between the first STL and the second STL. In a forward stack where electrons flow from the MP to the shield, the MP notch comprises FeCr and the shield notch comprises CoFe. In a reverse stack where electrons flow from the shield to the MP, the MP notch comprises CoFe and the shield notch comprises FeCr.

    Dynamic DC Field Compensator for MAMR Recording Head

    公开(公告)号:US20240321296A1

    公开(公告)日:2024-09-26

    申请号:US18228523

    申请日:2023-07-31

    CPC classification number: G11B5/3133 G11B5/3143 G11B2005/0024

    Abstract: The present disclosure generally relates to a magnetic recording system comprising a magnetic recording head. The magnetic recording head comprises a main pole, a shield, and a spintronic device disposed between the main pole and the shield. The spintronic device comprises a field generation layer (FGL) spaced a distance of about 2 nm to about 3 nm from the main pole, a first spacer layer disposed on the FGL, a spin torque layer (STL) disposed on the first spacer layer, a second spacer layer disposed on the STL, and a negative polarization layer (NPL) disposed between the second spacer layer and the shield. The spintronic device has a length of about 17 nm to about 21. During operation, the STL has a magnetization precession of about 16 degrees to about 170 degrees, and the FGL has a magnetization precession of about 60 degrees to about 70 degrees.

    Leading Shield For Magnetic Recording Heads
    7.
    发明公开

    公开(公告)号:US20230267953A1

    公开(公告)日:2023-08-24

    申请号:US17652066

    申请日:2022-02-22

    CPC classification number: G11B5/3116 G11B5/315

    Abstract: The present disclosure relates to a magnetic recording head having an exchange biased leading shield or leading edge shield (LES). The LES is a bilayer structure. One or more layers are coupled below the LES such that the LES is disposed between the main pole and the one or more layers. The one or more layers exchange bias the LES such that the upper layer of the LES has a magnetization parallel to the magnetization of the trailing shield. The lower layer of the LES has a magnetization that is antiparallel to the magnetization of the upper layer of the LES. The one or more layers set the preferred direction for the lower layer of the LES and sets the LES as a two-domain state without relying upon the anisotropy field (Hk) of either the upper or lower layers of the LES.

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