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公开(公告)号：US11839162B2
公开(公告)日：2023-12-05
申请号：US17358990
申请日：2021-06-25
CPC分类号： H10N50/80 , G11C11/161 , H01F10/329 , H01F10/3254 , H01F10/3286 , H10B61/00 , G11C11/165
摘要： Magnetoelectric or magnetoresistive memory cells may include a plurality of reference layers and optionally a plurality of free layers to enhance the tunneling magnetoresistance (TMR) ratio.
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公开(公告)号：US10957346B2
公开(公告)日：2021-03-23
申请号：US16833650
申请日：2020-03-29
发明人： Gonçalo Marcos Baião De Albuquerque , Yunfei Ding , Alexander Goncharov , Kuok San Ho , Daniele Mauri , Goran Mihajlovic , Suping Song , Petrus Antonius Van Der Heijden
IPC分类号： G11B11/105 , G11B5/127 , G11B5/31 , G11B5/60 , G11B5/11 , G11B5/39 , G11B5/455 , G11B5/02 , G11B5/00
摘要： Disclosed herein are magnetic recording devices and methods of using them. A magnetic recording device comprises a main pole extending to an air-bearing surface (ABS), a trailing shield extending to the ABS, a write-field-enhancing structure disposed between and coupled to the main pole and the trailing shield at the ABS, a write coil configured to magnetize the main pole, a write current control circuit coupled to the write coil and configured to apply a write current to the write coil, wherein the write current comprises a write pulse, and a bias current control circuit coupled to the write-field-enhancing structure and configured to apply a bias current to the write-field-enhancing structure, wherein the bias current comprises a driving pulse offset in time from the write pulse by a delay, wherein the delay substantially coincides with an expected magnetization switch-time lag of a free layer of the write-field-enhancing structure.
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公开(公告)号：US11004489B2
公开(公告)日：2021-05-11
申请号：US16459369
申请日：2019-07-01
发明人： Goran Mihajlovic , Tiffany Santos , Michael Grobis
摘要： A perpendicular spin transfer torque MRAM memory cell includes a magnetic tunnel junction stack comprising a pinned layer having a fixed direction of magnetization, a free layer having a direction of magnetization that can be switched, a tunnel barrier between the pinned layer and the free layer, a cap layer above the free layer and one or more in-stack multi-layer thermal barrier layers having multiple internal interfaces between materials. The thermal barrier layers have high enough thermal resistivity to maintain the heat generated in the memory cell and low enough electrical resistivity to not materially change the electrical resistance of the memory cell. One embodiment further includes a thermal barrier liner surrounding the free layer, pinned layer, tunnel barrier and cap layer.
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公开(公告)号：US11968907B2
公开(公告)日：2024-04-23
申请号：US17810710
申请日：2022-07-05
发明人： Goran Mihajlovic , Lei Wan
CPC分类号： H10N50/80 , G11C11/161 , G11C11/1673 , H10B61/00 , H10N50/85
摘要： A magnetoresistive memory cell includes a first electrode, a second electrode that is spaced from the first electrode, a magnetic tunnel junction layer stack located between the first electrode and the second electrode, the magnetic tunnel junction layer stack containing, from one side to another, a reference layer having a fixed reference magnetization direction, a tunnel barrier layer comprising a dielectric material, and a free layer, and an asymmetric magnetoresistance layer located between the magnetic tunnel junction layer stack and one of the first electrode and the second electrode.
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公开(公告)号：US11361805B2
公开(公告)日：2022-06-14
申请号：US17203420
申请日：2021-03-16
发明人： Goran Mihajlovic , Wonjoon Jung , Bhagwati Prasad
摘要： A memory device includes a first electrode, a second electrode that is spaced from the first electrode, a fixed vertical magnetization structure configured to generate a fixed vertical magnetic field and located between the first electrode and the second electrode, at least one layer stack located between the fixed magnetization structure and the second electrode and containing respective spacer dielectric layer and a respective additional reference layer including a respective ferromagnetic material having perpendicular magnetic anisotropy, and a magnetic tunnel junction located between the at least one layer stack and the second electrode, the magnetic tunnel junction containing a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, and the reference layer being more proximal to the at least one layer stack than the free layer is to the at least one layer stack.
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公开(公告)号：US10777248B1
公开(公告)日：2020-09-15
申请号：US16459389
申请日：2019-07-01
发明人： Goran Mihajlovic , Neil Smith , Michael Grobis , Michael Tran
摘要： A magnetoresistive random access memory (MRAM) memory cell comprises a pinned layer having fixed direction of magnetization that is perpendicular to a plane of the pinned layer, a first free layer having a direction of magnetization that can be switched and is perpendicular to a plane of the first free layer, a tunnel barrier positioned between the pinned layer and the first free layer, a second free layer having a direction of magnetization that can be switched, and a spacer layer positioned between the first free layer and the second free layer. Temperature dependence of coercivity of the second free layer is greater than temperature dependence of coercivity of the first free layer.
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公开(公告)号：US10891999B1
公开(公告)日：2021-01-12
申请号：US16458651
申请日：2019-07-01
发明人： Goran Mihajlovic , Michael Grobis
摘要： A MRAM memory cell comprises a SHE layer, a magnetic bit layer with perpendicular anisotropy and an Oersted layer. The magnetic bit layer has a switchable direction of magnetization in order to store data. Data is written to the MRAM memory cell using the Spin Hall Effect so that spin current generated in the SHE layer exerts a torque on the magnetic bit layer while the Oersted layer provides heat and an Oersted field to enable deterministic switching. Data is read form the MRAM memory cell using the Anomalous Hall Effect and sensing voltage at the Oersted layer.
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公开(公告)号：US10388305B1
公开(公告)日：2019-08-20
申请号：US15919025
申请日：2018-03-12
发明人： Gonçalo Marcos Baião De Albuquerque , Yunfei Ding , Alexander Goncharov , Kuok San Ho , Daniele Mauri , Goran Mihajlovic , Suping Song , Petrus Antonius Van Der Heijden
摘要： Disclosed herein are apparatuses and methods for writing to a magnetic medium, and data storage devices comprising such apparatuses and methods. An apparatus comprises a main pole, a trailing shield, a write-field-enhancing structure, a write coil, a write current control circuit configured to supply a write current to the write coil to record a bit to a magnetic medium, and a driving current control circuit configured to supply a driving current to the write-field-enhancing structure, wherein the driving current comprises a driving pulse. A method of writing to a magnetic medium comprises supplying a write current to a write coil of a magnetic write head, and supplying a driving current to a free layer disposed in a write gap between a main pole and a trailing shield of the magnetic write head, wherein the driving current comprises an AC component.
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公开(公告)号：US10290337B2
公开(公告)日：2019-05-14
申请号：US15822500
申请日：2017-11-27
发明人： Goran Mihajlovic , Neil Smith
摘要： A method and apparatus for deterministically switching a free layer in a spin orbit torque magnetoresistive random access memory (SOT-MRAM) cell is disclosed herein. In one embodiment, an SOT-MRAM memory cell is provided. The SOT-MRAM memory cell includes a magnetic tunnel junction, a ferromagnetic bias layer, and an antiferromagnetic layer. The magnetic tunnel junction includes a free layer having primarily two bi-stable magnetization directions, a reference layer having a fixed magnetization direction, and an insulating tunnel barrier layer positioned between the free layer and the reference layer. The ferromagnetic bias layer is configured to provide spin orbit torque via anomalous Hall effect and simultaneously configured to provide a magnetic bias field on the free layer to achieve deterministic switching. The antiferromagnetic layer is positioned below the ferromagnetic bias layer and is configured to pin a magnetization direction of the ferromagnetic bias layer in a predetermined direction.
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