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    Magnetic random access memory and method of reading data from the same
    1.
    发明申请
    Magnetic random access memory and method of reading data from the same 审中-公开
    磁性随机存取存储器和从其读取数据的方法

    公开(公告)号：US20050180205A1

    公开(公告)日：2005-08-18

    申请号：US11025841

    申请日：2004-12-30

    申请人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    发明人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    IPC分类号： G11C11/15 ,  G11C7/06 ,  G11C7/14 ,  G11C11/16 ,  G11C11/14

    CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C11/1659 ,  G11C11/1673

    摘要： In a magnetic random access memory (MRAM), and a method of reading data from the same, the MRAM includes a memory cell having one transistor and one magnetic tunneling junction (MTJ) layer, and a reference cell that is operable for use as a basis when reading data stored in the memory cell, wherein the reference cell includes first and second MTJ layers provided in parallel to each other, and first and second transistors provided in parallel to each other, the first and second transistors being respectively connected in series to the first and second MTJ layers. Alternatively, one transistor having a driving capability corresponding to twice a driving capability of the transistor of the memory cell may be substituted for the first and second transistors of the reference cell.

    摘要翻译： 在磁性随机存取存储器（MRAM）中，以及从其读取数据的方法，MRAM包括具有一个晶体管和一个磁性隧道结（MTJ）层的存储单元，以及可操作用作 读取存储在存储单元中的数据的基础，其中参考单元包括彼此并联设置的第一和第二MTJ层，以及彼此并联设置的第一和第二晶体管，第一和第二晶体管分别串联连接到 第一和第二MTJ层。 或者，具有对应于存储器单元的晶体管的驱动能力的两倍的驱动能力的一个晶体管可以代替参考单元的第一和第二晶体管。

    Magnetic random access memory and method of reading data from the same
    2.
    发明授权
    Magnetic random access memory and method of reading data from the same 有权
    磁性随机存取存储器和从其读取数据的方法

    公开(公告)号：US08320166B2

    公开(公告)日：2012-11-27

    申请号：US12230855

    申请日：2008-09-05

    申请人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    发明人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C7/14

    CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C11/1659 ,  G11C11/1673

    摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.

    摘要翻译： 磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和 第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。

    Magnetic random access memory and method of reading data from the same
    3.
    发明申请
    Magnetic random access memory and method of reading data from the same 有权
    磁性随机存取存储器和从其读取数据的方法

    公开(公告)号：US20090067233A1

    公开(公告)日：2009-03-12

    申请号：US12230855

    申请日：2008-09-05

    申请人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    发明人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    IPC分类号： G11C11/14 ,  G11C7/14 ,  G11C11/409

    CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C11/1659 ,  G11C11/1673

    摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.

    摘要翻译： 磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和 第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。

    Method of manufacturing a multi-purpose magnetic film structure
    4.
    发明申请
    Method of manufacturing a multi-purpose magnetic film structure 有权
    制造多用途磁性膜结构的方法

    公开(公告)号：US20080009080A1

    公开(公告)日：2008-01-10

    申请号：US11898762

    申请日：2007-09-14

    申请人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

    发明人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

    IPC分类号： H01L21/00

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

    摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

    摘要翻译： 提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。 多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜 当上下磁性膜具有相反的磁化方向时。

    Magneto-resistive random access memory
    5.
    发明授权
    Magneto-resistive random access memory 有权
    磁阻随机存取存储器

    公开(公告)号：US06815784B2

    公开(公告)日：2004-11-09

    申请号：US10445828

    申请日：2003-05-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L2982

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.