摘要:
A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first magnetic region, and depositing a second magnetic region (15) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.
摘要:
A thin film magnetic memory device includes: a TMR element, provided on a main surface of a silicon substrate, operating as a memory element; a buffer layer having a first surface bringing into contact with the TMR element and a second surface, located on the side opposite to the first surface, having an area smaller than that of the first surface; and a bit line, formed of a conductor film and a barrier metal film that bring into contact with the second surface, extending in one direction so as to intersect the TMR element. Thereby, it is possible to provide a thin film magnetic memory device realizing miniaturization of the memory cell and, also, having a high reliability, and a manufacturing method therefor.
摘要:
The invention relates to a miniature electrostatic actuation device (100) capable of generating movements along a determined direction (F), comprising pairs of electrodes (4) of which the mobile electrodes (8) may be pulled into contact with a fixed electrode (6) on a variable pull-in surface that varies as a function of the voltage applied between these pairs of electrodes. According to the invention, the device also comprises an actuation element (12) connected to the mobile electrodes (8), the element (12) being capable of occupying a rest position and of being guided along the determined direction (F) when the voltage applied between the electrodes in each pair (4) varies, the device comprising return arms (14) capable of pulling the actuation element (12) back towards its rest position, when the voltage applied between the two electrodes in each pair of electrodes is reduced. To be applied to actuation of continuously deformable micro-mirrors.
摘要:
A micro device includes a first magnetic layer, a second magnetic layer and a thin film coil. The first magnetic layer and the second magnetic layer are formed so as to be opposite to each other and magnetically connected via a joint. The thin film coil includes a planer round portion winding around the joint in between the first and the second magnetic layers and a perpendicular round portion provided perpendicularly to the planer round portion.
摘要:
A driver circuit substrate is prepared and a mirror substrate is so provided as to be placed on the driver circuit substrate. Nine mirror elements are lad out on the mirror substrate in a 3×3 matrix form. The mirror elements are prepared by a microelectromechanical system (MEMS). An insulating substrate is provided on the driver circuit substrate and a driver circuit which drives a light reflecting mirror element is provided on the insulating substrate. The driver circuit substrate is connected to the mirror substrate via a resin layer of a thermosetting adhesive or the like.
摘要:
A capacitive type MEMS switch having a conductor arrangement comprised of first and second RF conductors deposited on a substrate. A bridge member having a central enlarged portion is positioned over the conductor arrangement. In one embodiment, the first RF conductor has an end defining an open area in which is positioned a pull down electrode, with the end of the first RF conductor substantially surrounding the pull down electrode. In another embodiment, two opposed RF conductors, each having ends with first and second branches, define an open area in which a pull down electrode is positioned. A dielectric layer is deposited on the conductor arrangement such that when a pull down voltage is applied to the pull down electrode, the switch impedance is significantly reduced so as to allow signal propagation between the RF conductors.
摘要:
An electrostatic electroacoustical transducer contains an electrically conductive fixed electrode plate having an active surface with recesses. A conductive or semiconductive flexible diaphragm is disposed at a distance from the active surface of the electrode plate and within the recesses. An insulating device is disposed between the electrode plate and the diaphragm.
摘要:
A semiconductor device is provided that simplifies wiring pattern and is capable of being etched through an etching hole as a concavity is produced over a short time period. A dielectric film 12 is formed so as to shield the concavity formed upon the upper surface of a silicon substrate 10. A circuit pattern that has a thermoelectric conversion element 18 is formed upon the dielectric film. The upper surface of the silicon wafer becomes a (100) surface, and a first etching hole 16 extending in the direction of the silicon substrate and a second etching hole 17 extending in the direction are formed. These holes intersect in a cross shape. Shapes of the first and second etching holes become parallelograms which have oblique sides tilted with respect to and . Imaginary rectangles passing though the vertices of the first and second etching holes are continuous. As a cross shape is removed from the silicon substrate, etching is rapid due to the appearance of (411) surfaces at the intersecting part.
摘要:
The present invention discloses a tunable optical device. The tunable optical device includes a tuning cavity having a tuning means provided for alternately bonding to at least two different tunable optical cells each comprising a tuning membrane wherein the tuning cavity disposed near the tuning membrane for moving the tuning membrane for tuning one of the at least two tunable optical cells bonded thereon. In a preferred embodiment, the tuning cavity further includes a first electrode disposed on the tuning membrane and a second electrode disposed on a substrate supporting the tuning cavity for applying a voltage to move the tuning membrane. In a preferred embodiment, the optical device further includes an optical device control circuit connected to the tuning means for controlling and moving the tuning membrane. In a preferred embodiment, the tuning cavity further includes through hole along an optical path for an optical transmission passing through the tunable membrane for providing an interface-free and ripple-free optical path for the optical transmission. In a preferred embodiment, the tunable optical cells constitute an optical filter for bonding to the tuning cavity and tunable by moving the tunable membrane. In a preferred embodiment, the tunable optical cells constitute an optical attenuator for bonding to the tuning cavity and tunable by moving the tunable membrane. In a preferred embodiment, the tunable optical cells constitute an optical switch for bonding to the tuning cavity and tunable by moving the tunable membrane. In a preferred embodiment, the tunable optical cells constitute an optical dispersion compensator for bonding to the tuning cavity and tunable by moving the tunable membrane. In a preferred embodiment, the optical device constitutes a micro-electro-mechanical system (MEMS) optical device manufactured by applying a micro-electro-mechanical system (MEMS) technology.
摘要:
A method of improving the robustness of microcomponents formed of silicon by armor coating the microcomponent with a ductile material, such as a metal. The armored coating may comprise either partial armored coating or total armored coating. Providing the microcomponent with an armored coating reduces chipping and breaking, and likewise reduces contamination problems which arise from chips and breaks.