公开(公告)号：US20170115579A1

公开(公告)日：2017-04-27

申请号：US15260322

申请日：2016-09-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Yi Lin ,  En-Chiuan Liou ,  Yi-Jing Wang ,  Chia-Hsun Tseng

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  H01L21/02642 ,  H01L21/027 ,  H01L21/266 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

Abstract: An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.

公开(公告)号：US09568842B2

公开(公告)日：2017-02-14

申请号：US14696488

申请日：2015-04-27

Applicant: UNITED MiCROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chia-Ching Lin ,  Yi-Jing Wang

IPC: B25H7/04 ,  B41M5/00 ,  G03F7/20 ,  G03F1/70

CPC classification number: G03F7/70633 ,  G03F1/70

Abstract: An overlay operation method and an overlay control method are disclosed. A first mark and a second mark are identified on a substrate, wherein the first mark and the second mark are formed by a process in combination with using a photomask. Next, a first measurement is performed to obtain an offset between the first mark and the second mark in a direction. Then, an operation is performed to judge whether the offset is in a range from a pre-determined offset minus a deviation to the pre-determined offset plus the deviation, wherein the pre-determined offset is determined by the photomask.

Abstract translation: 公开了覆盖操作方法和覆盖控制方法。 在基板上识别第一标记和第二标记，其中第一标记和第二标记通过与使用光掩模组合的方法形成。 接下来，执行第一测量以在方向上获得第一标记和第二标记之间的偏移。 然后，执行操作以判断偏移是否在从预定偏移减去偏差到预定偏移加上偏差的范围内，其中预定偏移由光掩模确定。

公开(公告)号：US09470987B1

公开(公告)日：2016-10-18

申请号：US14920859

申请日：2015-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Yi Lin ,  En-Chiuan Liou ,  Yi-Jing Wang ,  Chia-Hsun Tseng

IPC: G03F7/00 ,  H01L21/30 ,  H01L21/02 ,  H01L21/32 ,  H01L21/26 ,  H01L21/31 ,  G03F7/20 ,  H01L21/266 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027

CPC classification number: G03F7/70633 ,  H01L21/02642 ,  H01L21/027 ,  H01L21/266 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

Abstract: An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.

Abstract translation: 覆盖掩模包括多个第一图案，多个第二图案和多个第三图案。 第一图案布置在第一间距之内。 第二图案布置在第二间距内。 第三图案的第一部分在第一间距内与第一图案交替布置，并且第三图案的第二部分在第二间距内与第二图案交替布置，并且第一间距不等于 第二音调

公开(公告)号：US09373505B2

公开(公告)日：2016-06-21

申请号：US14278296

申请日：2014-05-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Ying Huang ,  Jen-Hsiu Li ,  Mei-Chen Chen ,  Ya-Ling Chen ,  Yi-Jing Wang ,  Chi-Ming Huang

IPC: H01L23/544 ,  H01L21/033

CPC classification number: H01L21/0334 ,  H01L21/0337 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.

Abstract translation: 在本公开中，提供了一种标记分割方法及其制造应用该半导体结构的方法。 标记分割方法包括以下步骤。 首先，通过处理器识别具有宽度WS并且由形成在基板上的空间SS彼此分离的多个段。 此后，处理器在片段上设置多个标记。 该步骤包括：（1）处理器调整每一个标记的宽度WM等于m（WS + SS）+ WS或m（WS + SS）+ SS，其中m是整数; 和（2）由处理器调整相邻两个标记的空格SM，使得WM + SM = n（WS + SS），其中n是整数。

公开(公告)号：US09653404B1

公开(公告)日：2017-05-16

申请号：US15245161

申请日：2016-08-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Jing Wang ,  En-Chiuan Liou ,  Mei-Chen Chen ,  Han-Lin Zeng ,  Chia-Hung Lin ,  Chun-Chi Yu

IPC: H01L23/544

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446

Abstract: The present invention provides an overlay target. The overlay target includes a plurality of first pattern blocks and a plurality of second pattern blocks. The first pattern blocks and the second patterns blocks are arranged in array by being separated by at least one first gaps stretching along a first direction and at least one second gaps stretching along a second direction. Each first pattern block is composed of a plurality of first stripe patterns stretching along a third direction, and each second pattern block is composed of a plurality of second stripe patterns stretching along a fourth direction. The first direction is orthogonal to the second direction, the third direction and the fourth direction are 45 degrees relative to the first direction.

公开(公告)号：US09410902B1

公开(公告)日：2016-08-09

申请号：US14703890

申请日：2015-05-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yi-Jing Wang

IPC: G01B11/14 ,  G01N21/95 ,  G01B11/27 ,  G01N21/88

CPC classification number: G01N21/9501 ,  G01B11/27 ,  G01N21/8806 ,  G01N2021/8825 ,  G03F7/70633

Abstract: An overlay measurement method includes providing three predetermined patterns, including a first predetermined pattern, a second predetermined pattern and a third predetermined pattern. An inspection process is then performed on said three predetermined patterns, to obtain three image points, including a first image point, a second image point and a third image point respectively. Next, a defining process is performed to define a default position, and a calculating process is performed to obtain a real offset value x=(p−q)*(c−a)/(a−b)+p.

Abstract translation: 覆盖测量方法包括提供包括第一预定图案，第二预定图案和第三预定图案的三个预定图案。 然后对所述三个预定图案执行检查处理，以分别获得包括第一图像点，第二图像点和第三图像点的三个图像点。 接下来，执行定义处理以定义默认位置，并且执行计算处理以获得实际偏移值x =（p-q）*（c-a）/（a-b）+ p。

公开(公告)号：US09964866B2

公开(公告)日：2018-05-08

申请号：US15065872

申请日：2016-03-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Yi Lin ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Yi-Ting Chen ,  Chia-Hung Wang ,  Yi-Jing Wang

IPC: G06F17/50 ,  G03F9/00

CPC classification number: G03F9/7003

Abstract: A method of forming an integrated circuit includes the following steps. A substrate including a plurality of exposure fields is provided, and each of the exposure field includes a target portion and a set of alignment marks. Measure the set of alignment marks of each exposure field by a measuring system to obtain alignment data for the respective exposure field. Determine an exposure parameter corresponding to each exposure field and an exposure location on the target portion from the alignment data for the respective exposure field by a calculating system. Feedback the alignment data to a next substrate.

公开(公告)号：US20170220728A1

公开(公告)日：2017-08-03

申请号：US15065872

申请日：2016-03-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Yi Lin ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Yi-Ting Chen ,  Chia-Hung Wang ,  Yi-Jing Wang

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G03F9/7003

Abstract: A method of forming an integrated circuit includes the following steps. A substrate including a plurality of exposure fields is provided, and each of the exposure field includes a target portion and a set of alignment marks. Measure the set of alignment marks of each exposure field by a measuring system to obtain alignment data for the respective exposure field. Determine an exposure parameter corresponding to each exposure field and an exposure location on the target portion from the alignment data for the respective exposure field by a calculating system. Feedback the alignment data to a next substrate.

公开(公告)号：US20160313652A1

公开(公告)日：2016-10-27

申请号：US14696488

申请日：2015-04-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chia-Ching Lin ,  Yi-Jing Wang

IPC: G03F7/20 ,  G03F1/70

CPC classification number: G03F7/70633 ,  G03F1/70

Abstract: An overlay operation method and an overlay control method are disclosed. A first mark and a second mark are identified on a substrate, wherein the first mark and the second mark are formed by a process in combination with using a photomask. Next, a first measurement is performed to obtain an offset between the first mark and the second mark in a direction. Then, an operation is performed to judge whether the offset is in a range from a pre-determined offset minus a deviation to the pre-determined offset plus the deviation, wherein the pre-determined offset is determined by the photomask.

Abstract translation: 公开了覆盖操作方法和覆盖控制方法。 在基板上识别第一标记和第二标记，其中第一标记和第二标记通过与使用光掩模组合的方法形成。 接下来，执行第一测量以在方向上获得第一标记和第二标记之间的偏移。 然后，执行操作以判断偏移是否在从预定偏移减去偏差到预定偏移加上偏差的范围内，其中预定偏移由光掩模确定。

公开(公告)号：US09746786B2

公开(公告)日：2017-08-29

申请号：US15260322

申请日：2016-09-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Yi Lin ,  En-Chiuan Liou ,  Yi-Jing Wang ,  Chia-Hsun Tseng

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70633 ,  H01L21/02642 ,  H01L21/027 ,  H01L21/266 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

Abstract: An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.