公开(公告)号：US06787900B2

公开(公告)日：2004-09-07

申请号：US09534043

申请日：2000-03-24

申请人： Toshiaki Shinohara ,  Akira Fujita ,  Takanobu Yoshida

发明人： Toshiaki Shinohara ,  Akira Fujita ,  Takanobu Yoshida

IPC分类号： H01L2334

CPC分类号： H01L23/13 ,  H01L23/3121 ,  H01L23/3735 ,  H01L24/45 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor module (18) includes a ring-shaped metal frame (13) having a bottom surface for contact with a top surface of an external heat sink (11) and serving as a mounting surface. The ring-shaped metal frame (13) has a flange (20) along an inner periphery thereof for engagement with an outer peripheral part of an insulating substrate (17) at a first main surface of a ceramic plate (1). The metal frame (13) is fastened to the external heat sink (11) by screws (12) or bonded to the external heat sink (11) with an adhesive. The flange (20) of the metal frame (13) fastened or bonded to the external heat sink (11) presses the outer peripheral part of the insulating substrate (17) toward the external heat sink (11). This pressing force holds the insulating substrate (17) in pressure contact with the external heat sink (11). The semiconductor module (18) avoids the problem of a decreasing pressing force resulting from deformation to ensure a satisfactory heat dissipating property over a long period of time.

摘要翻译： 半导体模块（18）包括具有用于与外部散热器（11）的顶表面接触并用作安装表面的底表面的环形金属框架（13）。 环形金属框架（13）沿其内周具有凸缘（20），用于与陶瓷板（1）的第一主表面处的绝缘基板（17）的外周部分接合。 金属框架（13）通过螺钉（12）固定在外部散热器（11）上，或者用粘合剂粘合到外部散热器（11）上。 紧固或接合到外部散热器（11）的金属框架（13）的凸缘（20）将绝缘基板（17）的外周部分朝向外部散热器（11）挤压。 该按压力使绝缘基板（17）与外部散热器（11）压力接触。 半导体模块（18）避免了由变形产生的压力减小的问题，以确保长时间的令人满意的散热性能。

公开(公告)号：US20060119512A1

公开(公告)日：2006-06-08

申请号：US11295442

申请日：2005-12-07

申请人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

发明人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

IPC分类号： H01Q3/26

CPC分类号： H01Q3/26 ,  H01L23/473 ,  H01L25/112 ,  H01L2924/0002 ,  H05K7/20927 ,  H01L2924/00

摘要： One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

摘要翻译： 本发明的一个方面是提供一种功率半导体器件，其包括至少一对功率模块，每个功率模块具有被模制树脂覆盖的模制表面和与模制表面相对的辐射表面。 此外，功率半导体器件包括夹着功率模块的一对散热片，使得功率模块的模制表面彼此接触，并且其辐射表面各自接触散热片。

公开(公告)号：US06421244B1

公开(公告)日：2002-07-16

申请号：US09564547

申请日：2000-05-04

申请人： Toshiaki Shinohara ,  Takanobu Yoshida

发明人： Toshiaki Shinohara ,  Takanobu Yoshida

IPC分类号： H05K114

CPC分类号： H01L23/24 ,  H01L24/45 ,  H01L24/48 ,  H01L25/162 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00012

摘要： In a power module, an interconnection terminal (10) is inserted into a through hole (30) and a connector (16) of a control circuit substrate (12) from the side of a lower main surface of the control. circuit substrate (12). Then, the interconnection terminal (10) presses a terminal (17) to displace the terminal (17). Thus, electrical and physical connections are provided between the control circuit substrate (12) and the interconnection terminal (10) in such a manner that the interconnection terminal (10) is held between the terminal (17) and an inner peripheral side surface of the connector (16). The interconnection terminal and the control circuit substrate are fixed. to each other without using solder, whereby the power module which is easy to mount and remove is provided.

摘要翻译： 在功率模块中，互连端子（10）从控制电路的下主表面的一侧插入到控制电路基板（12）的通孔（30）和连接器（16）中。 电路基板（12）。 然后，互连端子（10）按压端子（17）以使端子（17）移位。 因此，在控制电路基板（12）和互连端子（10）之间提供电气和物理连接，使得互连端子（10）保持在端子（17）和端子（17）的内周侧表面之间 连接器（16）。 互连端子和控制电路基板是固定的。 而不使用焊料，由此提供易于安装和移除的电源模块。

公开(公告)号：US06765285B2

公开(公告)日：2004-07-20

申请号：US10378840

申请日：2003-03-05

申请人： Toshiaki Shinohara ,  Takanobu Yoshida

发明人： Toshiaki Shinohara ,  Takanobu Yoshida

IPC分类号： H01L2504

CPC分类号： H01L25/115 ,  H01L23/473 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A discrete semiconductor device is vertically sandwiched between an upper wall of a case body and a case bottom plate to be fixed inside a case. The discrete semiconductor device is fitted in the case to be positioned on a predetermined portion inside the case with high accuracy. A space defined by a side surface of the discrete semiconductor device and an inner wall of the case forms a duct for a coolant used for cooling the discrete semiconductor device. The discrete semiconductor device, except main electrodes and signal terminals, is immersed in the coolant. With this structure provided is a power semiconductor device which allows an increase in radiating efficiency of a power semiconductor element and reduction in manufacturing cost.

摘要翻译： 分立半导体器件垂直夹在壳体的上壁和壳体底板之间，以固定在壳体内。 分立半导体器件安装在壳体内以高精度定位在壳体内的预定部分上。 由分立半导体器件的侧表面和壳体的内壁限定的空间形成用于冷却分立半导体器件的冷却剂的管道。 除了主电极和信号端子之外的分立半导体器件被浸入冷却剂中。 通过提供这样的结构，能够提高功率半导体元件的散热效率，降低制造成本的功率半导体装置。

公开(公告)号：US06313520B1

公开(公告)日：2001-11-06

申请号：US09664341

申请日：2000-09-18

申请人： Takanobu Yoshida ,  Toshiaki Shinohara ,  Hisashi Kawafuji

发明人： Takanobu Yoshida ,  Toshiaki Shinohara ,  Hisashi Kawafuji

IPC分类号： H01L23495

CPC分类号： H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A resin-sealed power semiconductor device is provided. The thicknesses of a die pad (19) and a lead part (2) are made equal and as great as possible. A thick film substrate (8) is bonded with a bonding layer (20) onto a plurality of supporting inner leads (2AS) among first inner leads (2A1) positioned above the die pad (19). Patterns of a control circuit of power semiconductor elements (1) are formed as thick film patterns (10) on an upper surface of the substrate (8), and a control circuit element (IC) (9) and all electronic components (12) are mounted on the patterns (10) by soldering. The constituents (9, 12, 10, 8, 1, 2A1, 19, 2B1) are sealed in a sealing resin (5). The resin-sealed power semiconductor device improves noise immunity while conventionally effectively dissipating heat generated by the power semiconductor elements, and is designed to be adaptable to increase in functionality thereof.

摘要翻译： 提供树脂密封型功率半导体器件。 芯片焊盘（19）和引线部分（2）的厚度被制成相等且尽可能大。 在位于管芯焊盘（19）上方的第一内引线（2A1）中，将厚膜基板（8）与接合层（20）接合到多个支撑内引线（2AS）上。 功率半导体元件（1）的控制电路的图案在基板（8）的上表面上形成为厚膜图案（10），以及控制电路元件（IC）（9）和所有电子元件（12） 通过焊接安装在图案（10）上。 组分（9,12,10,8,1,2A1,19,2B1）密封在密封树脂（5）中。 树脂密封型功率半导体器件在传统上有效地消散由功率半导体元件产生的热量的同时，提高了抗噪声性，并且被设计成能够适应其功能性的增加。

公开(公告)号：US07656016B2

公开(公告)日：2010-02-02

申请号：US11295442

申请日：2005-12-07

申请人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

发明人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

IPC分类号： H01L23/02

CPC分类号： H01Q3/26 ,  H01L23/473 ,  H01L25/112 ,  H01L2924/0002 ,  H05K7/20927 ,  H01L2924/00

摘要： One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

摘要翻译： 本发明的一个方面是提供一种功率半导体器件，其包括至少一对功率模块，每个功率模块具有被模制树脂覆盖的模制表面和与模制表面相对的辐射表面。 此外，功率半导体器件包括夹着功率模块的一对散热片，使得功率模块的模制表面彼此接触，并且其辐射表面各自接触散热片。

公开(公告)号：US06762937B2

公开(公告)日：2004-07-13

申请号：US10314989

申请日：2002-12-10

申请人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

发明人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

IPC分类号： H05K720

CPC分类号： H02M7/003 ,  H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

摘要翻译： 功率模块包括其上安装有功率半导体器件的衬底，具有其中设置有衬底的内部的壳体，具有衬底和壳体的表面的冷却翅片以及布置在其上的平滑电容器 所述平滑电容器电连接到所述功率半导体器件，用于使外部提供给所述功率半导体器件的电压平滑。

公开(公告)号：US06509629B2

公开(公告)日：2003-01-21

申请号：US09759252

申请日：2001-01-16

申请人： Naoki Yoshimatsu ,  Takanobu Yoshida

发明人： Naoki Yoshimatsu ,  Takanobu Yoshida

IPC分类号： H01L23552

CPC分类号： H01L23/552 ,  H01L24/48 ,  H01L25/162 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K1/144 ,  H05K9/0022 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A control substrate is covered by an electromagnetic shielding member connected to a conductive base plate on which a power insulating substrate is placed. A conductive connecting member through which the electromagnetic shielding member and the conductive base plate are electrically connected to each other is inserted into a case. The control substrate and the electromagnetic shielding member are supported by the conductive connecting member.

摘要翻译： 控制基板由连接到其上放置有电力绝缘基板的导电基板的电磁屏蔽构件覆盖。 将电磁屏蔽构件和导电基板彼此电连接的导电连接构件插入到壳体中。 控制基板和电磁屏蔽部件由导电连接部件支撑。

公开(公告)号：US06580147B2

公开(公告)日：2003-06-17

申请号：US09805576

申请日：2001-03-14

申请人： Toru Kimura ,  Dai Nakajima ,  Tatsuya Okuda ,  Takeshi Ohi ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Yuuji Kuramoto ,  Toshinori Yamane ,  Masakazu Fukada ,  Majumdar Gourab

发明人： Toru Kimura ,  Dai Nakajima ,  Tatsuya Okuda ,  Takeshi Ohi ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Yuuji Kuramoto ,  Toshinori Yamane ,  Masakazu Fukada ,  Majumdar Gourab

IPC分类号： H01L2900

CPC分类号： H01L27/0629 ,  H01L27/0647

摘要： P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

摘要翻译： 半导体器件2的P电极30a和N电极31a以及分别连接到U相40，V相41和W相42的板状或块状形状的电容器10具有 开关元件20和二极管21内置在半导体器件2中，并且在各相中分别将单个或多个电容器10连接到P电极30a和N电极31a，由此将平滑电容器内置 减少布线电感的半导体器件，电容器小型化，整个电力转换装置即逆变器小型化。

公开(公告)号：US07148562B2

公开(公告)日：2006-12-12

申请号：US10872481

申请日：2004-06-22

申请人： Takanobu Yoshida ,  Shinji Hatae

发明人： Takanobu Yoshida ,  Shinji Hatae

IPC分类号： H01L23/495 ,  H01L23/52 ,  H01L23/34 ,  H01L23/498

CPC分类号： H01L23/49575 ,  H01L23/36 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.

摘要翻译： 多个功率半导体芯片（功率晶体管等）被布置成彼此分离，其间插入有端子板的自由空间。 辐射块与每个功率半导体器件的布置区域和功率半导体器件之间的区域之下的绝缘层（端子板下方的封装和油脂）接触，并且这增加了散热效果。 利用这种结构，可以提供功率半导体器件和功率半导体模块，该功率半导体器件和功率半导体模块确保在功率半导体芯片的操作中散热的散热效果优异。