公开(公告)号：US06762937B2

公开(公告)日：2004-07-13

申请号：US10314989

申请日：2002-12-10

申请人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

发明人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

IPC分类号： H05K720

CPC分类号： H02M7/003 ,  H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

摘要翻译： 功率模块包括其上安装有功率半导体器件的衬底，具有其中设置有衬底的内部的壳体，具有衬底和壳体的表面的冷却翅片以及布置在其上的平滑电容器 所述平滑电容器电连接到所述功率半导体器件，用于使外部提供给所述功率半导体器件的电压平滑。

公开(公告)号：US06509629B2

公开(公告)日：2003-01-21

申请号：US09759252

申请日：2001-01-16

申请人： Naoki Yoshimatsu ,  Takanobu Yoshida

发明人： Naoki Yoshimatsu ,  Takanobu Yoshida

IPC分类号： H01L23552

CPC分类号： H01L23/552 ,  H01L24/48 ,  H01L25/162 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K1/144 ,  H05K9/0022 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A control substrate is covered by an electromagnetic shielding member connected to a conductive base plate on which a power insulating substrate is placed. A conductive connecting member through which the electromagnetic shielding member and the conductive base plate are electrically connected to each other is inserted into a case. The control substrate and the electromagnetic shielding member are supported by the conductive connecting member.

摘要翻译： 控制基板由连接到其上放置有电力绝缘基板的导电基板的电磁屏蔽构件覆盖。 将电磁屏蔽构件和导电基板彼此电连接的导电连接构件插入到壳体中。 控制基板和电磁屏蔽部件由导电连接部件支撑。

公开(公告)号：US06765285B2

公开(公告)日：2004-07-20

申请号：US10378840

申请日：2003-03-05

申请人： Toshiaki Shinohara ,  Takanobu Yoshida

发明人： Toshiaki Shinohara ,  Takanobu Yoshida

IPC分类号： H01L2504

CPC分类号： H01L25/115 ,  H01L23/473 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A discrete semiconductor device is vertically sandwiched between an upper wall of a case body and a case bottom plate to be fixed inside a case. The discrete semiconductor device is fitted in the case to be positioned on a predetermined portion inside the case with high accuracy. A space defined by a side surface of the discrete semiconductor device and an inner wall of the case forms a duct for a coolant used for cooling the discrete semiconductor device. The discrete semiconductor device, except main electrodes and signal terminals, is immersed in the coolant. With this structure provided is a power semiconductor device which allows an increase in radiating efficiency of a power semiconductor element and reduction in manufacturing cost.

摘要翻译： 分立半导体器件垂直夹在壳体的上壁和壳体底板之间，以固定在壳体内。 分立半导体器件安装在壳体内以高精度定位在壳体内的预定部分上。 由分立半导体器件的侧表面和壳体的内壁限定的空间形成用于冷却分立半导体器件的冷却剂的管道。 除了主电极和信号端子之外的分立半导体器件被浸入冷却剂中。 通过提供这样的结构，能够提高功率半导体元件的散热效率，降低制造成本的功率半导体装置。

公开(公告)号：US06580147B2

公开(公告)日：2003-06-17

申请号：US09805576

申请日：2001-03-14

申请人： Toru Kimura ,  Dai Nakajima ,  Tatsuya Okuda ,  Takeshi Ohi ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Yuuji Kuramoto ,  Toshinori Yamane ,  Masakazu Fukada ,  Majumdar Gourab

发明人： Toru Kimura ,  Dai Nakajima ,  Tatsuya Okuda ,  Takeshi Ohi ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Yuuji Kuramoto ,  Toshinori Yamane ,  Masakazu Fukada ,  Majumdar Gourab

IPC分类号： H01L2900

CPC分类号： H01L27/0629 ,  H01L27/0647

摘要： P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

摘要翻译： 半导体器件2的P电极30a和N电极31a以及分别连接到U相40，V相41和W相42的板状或块状形状的电容器10具有 开关元件20和二极管21内置在半导体器件2中，并且在各相中分别将单个或多个电容器10连接到P电极30a和N电极31a，由此将平滑电容器内置 减少布线电感的半导体器件，电容器小型化，整个电力转换装置即逆变器小型化。

公开(公告)号：US06313520B1

公开(公告)日：2001-11-06

申请号：US09664341

申请日：2000-09-18

申请人： Takanobu Yoshida ,  Toshiaki Shinohara ,  Hisashi Kawafuji

发明人： Takanobu Yoshida ,  Toshiaki Shinohara ,  Hisashi Kawafuji

IPC分类号： H01L23495

CPC分类号： H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A resin-sealed power semiconductor device is provided. The thicknesses of a die pad (19) and a lead part (2) are made equal and as great as possible. A thick film substrate (8) is bonded with a bonding layer (20) onto a plurality of supporting inner leads (2AS) among first inner leads (2A1) positioned above the die pad (19). Patterns of a control circuit of power semiconductor elements (1) are formed as thick film patterns (10) on an upper surface of the substrate (8), and a control circuit element (IC) (9) and all electronic components (12) are mounted on the patterns (10) by soldering. The constituents (9, 12, 10, 8, 1, 2A1, 19, 2B1) are sealed in a sealing resin (5). The resin-sealed power semiconductor device improves noise immunity while conventionally effectively dissipating heat generated by the power semiconductor elements, and is designed to be adaptable to increase in functionality thereof.

摘要翻译： 提供树脂密封型功率半导体器件。 芯片焊盘（19）和引线部分（2）的厚度被制成相等且尽可能大。 在位于管芯焊盘（19）上方的第一内引线（2A1）中，将厚膜基板（8）与接合层（20）接合到多个支撑内引线（2AS）上。 功率半导体元件（1）的控制电路的图案在基板（8）的上表面上形成为厚膜图案（10），以及控制电路元件（IC）（9）和所有电子元件（12） 通过焊接安装在图案（10）上。 组分（9,12,10,8,1,2A1,19,2B1）密封在密封树脂（5）中。 树脂密封型功率半导体器件在传统上有效地消散由功率半导体元件产生的热量的同时，提高了抗噪声性，并且被设计成能够适应其功能性的增加。

公开(公告)号：US20060119512A1

公开(公告)日：2006-06-08

申请号：US11295442

申请日：2005-12-07

申请人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

发明人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

IPC分类号： H01Q3/26

CPC分类号： H01Q3/26 ,  H01L23/473 ,  H01L25/112 ,  H01L2924/0002 ,  H05K7/20927 ,  H01L2924/00

摘要： One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

摘要翻译： 本发明的一个方面是提供一种功率半导体器件，其包括至少一对功率模块，每个功率模块具有被模制树脂覆盖的模制表面和与模制表面相对的辐射表面。 此外，功率半导体器件包括夹着功率模块的一对散热片，使得功率模块的模制表面彼此接触，并且其辐射表面各自接触散热片。

公开(公告)号：US07656016B2

公开(公告)日：2010-02-02

申请号：US11295442

申请日：2005-12-07

申请人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

发明人： Naoki Yoshimatsu ,  Takanobu Yoshida ,  Toshiaki Shinohara

IPC分类号： H01L23/02

CPC分类号： H01Q3/26 ,  H01L23/473 ,  H01L25/112 ,  H01L2924/0002 ,  H05K7/20927 ,  H01L2924/00

摘要： One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

摘要翻译： 本发明的一个方面是提供一种功率半导体器件，其包括至少一对功率模块，每个功率模块具有被模制树脂覆盖的模制表面和与模制表面相对的辐射表面。 此外，功率半导体器件包括夹着功率模块的一对散热片，使得功率模块的模制表面彼此接触，并且其辐射表面各自接触散热片。

公开(公告)号：US07148562B2

公开(公告)日：2006-12-12

申请号：US10872481

申请日：2004-06-22

申请人： Takanobu Yoshida ,  Shinji Hatae

发明人： Takanobu Yoshida ,  Shinji Hatae

IPC分类号： H01L23/495 ,  H01L23/52 ,  H01L23/34 ,  H01L23/498

CPC分类号： H01L23/49575 ,  H01L23/36 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.

摘要翻译： 多个功率半导体芯片（功率晶体管等）被布置成彼此分离，其间插入有端子板的自由空间。 辐射块与每个功率半导体器件的布置区域和功率半导体器件之间的区域之下的绝缘层（端子板下方的封装和油脂）接触，并且这增加了散热效果。 利用这种结构，可以提供功率半导体器件和功率半导体模块，该功率半导体器件和功率半导体模块确保在功率半导体芯片的操作中散热的散热效果优异。

公开(公告)号：US06900986B2

公开(公告)日：2005-05-31

申请号：US10810832

申请日：2004-03-29

申请人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

发明人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

IPC分类号： H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L25/07 ,  H01L25/18 ,  H02M1/00 ,  H02M7/00 ,  H02M7/04 ,  H05K7/20

CPC分类号： H02M7/003 ,  H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

摘要翻译： 功率模块包括其上安装有功率半导体器件的第一衬底，具有用于控制其上形成的功率半导体器件的控制电路的第二衬底，电连接到功率半导体器件的平滑电容器，用于平滑外部供应到 功率半导体器件，以及包括壳体框架和壳体盖的壳体。 壳体具有其中设置有第一基板，第二基板和平滑电容器的内部，并且平滑电容器设置成与壳体框架的侧表面接触。

公开(公告)号：US20050093123A1

公开(公告)日：2005-05-05

申请号：US10872481

申请日：2004-06-22

申请人： Takanobu Yoshida ,  Shinji Hatae

发明人： Takanobu Yoshida ,  Shinji Hatae

IPC分类号： H01L23/36 ,  H01L23/495 ,  H01L25/07 ,  H01L25/18 ,  H01L23/02

CPC分类号： H01L23/49575 ,  H01L23/36 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.

摘要翻译： 多个功率半导体芯片（功率晶体管等）被布置成彼此分离，其间插入有端子板的自由空间。 辐射块与每个功率半导体器件的布置区域和功率半导体器件之间的区域之下的绝缘层（端子板下方的封装和油脂）接触，并且这增加了散热效果。 利用这种结构，可以提供功率半导体器件和功率半导体模块，该功率半导体器件和功率半导体模块确保在功率半导体芯片的操作中散热的散热效果优异。