公开(公告)号：US20220399212A1

公开(公告)日：2022-12-15

申请号：US17887061

申请日：2022-08-12

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Hironari SASAGAWA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/67 ,  H01L21/033 ,  C23C16/50 ,  C23C16/46 ,  C23C16/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3065

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

公开(公告)号：US20200035501A1

公开(公告)日：2020-01-30

申请号：US16521080

申请日：2019-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA ,  Sho KUMAKURA

IPC: H01L21/311 ,  H01L21/02

Abstract: A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.

公开(公告)号：US20250087454A1

公开(公告)日：2025-03-13

申请号：US18955997

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes: (a) providing a substrate, the substrate including a first film and a second film having openings on the first film, the first film containing a metallic element and a non-metallic element, and (b) etching the first film through the openings. The (b) includes: (i) etching the first film through the openings with a first plasma generated from a first processing gas including a halogen-containing gas by supplying a pulse of a radio-frequency power, (ii) modifying a sidewall of a recess formed in the (i) with a second plasma generated from a second processing gas, and (iii) repeating the (i) and the (ii).

公开(公告)号：US20210233778A1

公开(公告)日：2021-07-29

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju TOMURA ,  Tomohiko NIIZEKI ,  Takayuki KATSUNUMA ,  Hironari SASAGAWA ,  Yuta NAKANE ,  Shinya ISHIKAWA ,  Kenta ONO ,  Sho KUMAKURA ,  Yusuke TAKINO ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US20200279757A1

公开(公告)日：2020-09-03

申请号：US16804807

申请日：2020-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho KUMAKURA ,  Hironari SASAGAWA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/67 ,  H01L21/033 ,  H01L21/027 ,  C23C16/46 ,  C23C16/02 ,  C23C16/50

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

公开(公告)号：US20200176265A1

公开(公告)日：2020-06-04

申请号：US16564851

申请日：2019-09-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KATSUNUMA ,  Toru HISAMATSU ,  Shinya ISHIKAWA ,  Yoshihide KIHARA ,  Masanobu HONDA ,  Maju TOMURA ,  Sho KUMAKURA

IPC: H01L21/311 ,  H01L21/02

Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.

公开(公告)号：US20250166976A1

公开(公告)日：2025-05-22

申请号：US19032757

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Yuta NAKANE ,  Kenta ONO ,  Sho KUMAKURA ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

IPC: H01J37/32

Abstract: A method for processing a substrate is disclosed. The method includes (a) providing a substrate on a substrate support in a processing chamber, the substrate having an underlying film and a resist film disposed on the underlying film and formed of a metal-containing resist, and the resist film having a first region and a second region. The method further includes (b) dry-developing the resist film by supplying a processing gas containing a carboxylic acid into the processing chamber, exposing the substrate to the carboxylic acid, and selectively removing the second region with respect to the first region. In the (b), a pressure or a partial pressure of the carboxylic acid is 0.3 Torr (40 Pa) or more and less than 100 Torr (13,332 Pa).

公开(公告)号：US20250087455A1

公开(公告)日：2025-03-13

申请号：US18956002

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI ,  Shota YAMAZAKI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes a step (a) of providing a substrate, the substrate including a first film and a second film having an opening on the first film, the first film containing a metallic element and a non-metallic element, a step (b) of forming a protective film on a sidewall of a recess formed in the first film corresponding to the opening, and a step (c) of etching the first film through the opening with a plasma generated from a processing gas including a halogen-containing gas at the same time as or after the step (b).

公开(公告)号：US20240120187A1

公开(公告)日：2024-04-11

申请号：US18389827

申请日：2023-12-20

Applicant: Tokyo Electron Limited

Inventor： Hironari SASAGAWA ,  Sho KUMAKURA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32935 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/334

Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.

公开(公告)号：US20240047223A1

公开(公告)日：2024-02-08

申请号：US18485978

申请日：2023-10-12

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Kenta ONO ,  Shinya ISHIKAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01L21/32139 ,  H01L21/308 ,  H01J2237/332

Abstract: A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.