公开(公告)号：US20230377899A1

公开(公告)日：2023-11-23

申请号：US18199734

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro YONEZAWA ,  Yusuke TAKINO ,  Kenta ONO ,  Tetsuya NISHIZUKA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01J37/3211 ,  H01L21/32136 ,  H01L21/31116 ,  H01J2237/334

Abstract: A plasma processing method according to the present disclosure is performed with a plasma processing apparatus, and includes: (a) preparing a substrate on a substrate support in the chamber, the substrate having an etching target film including a first silicon-containing film, and a first metal-containing film on the etching target film, the first metal-containing film including an opening pattern; and (b) etching the etching target film. (b) includes supplying a processing gas including one or more gases containing carbon, hydrogen, and fluorine into the chamber to form a plasma from the processing gas within the chamber and etch the first silicon-containing film to form the opening pattern in the first silicon-containing film, and a ratio of the number of hydrogen atoms to the number of fluorine atoms in the processing gas is 0.3 or more.

公开(公告)号：US20150235867A1

公开(公告)日：2015-08-20

申请号：US14701587

申请日：2015-05-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya NISHIZUKA ,  Masahiko TAKAHASHI

IPC: H01L21/3213 ,  H01L21/28

CPC classification number: H01L21/32137 ,  H01L21/28 ,  H01L21/28008 ,  H01L21/306 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.

Abstract translation: 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率的情况下，通过对所述预定区域进行图案化来去除所述导电层的预定区域， 85 mTorr以上高压条件。

公开(公告)号：US20240143870A1

公开(公告)日：2024-05-02

申请号：US18384906

申请日：2023-10-30

Applicant: Tokyo Electron Limited

Inventor： Hironori MOKI ,  Tetsuya NISHIZUKA ,  Masanobu HONDA ,  Yusuke OGAWA

IPC: G06F30/20

CPC classification number: G06F30/20 ,  G06F2119/18

Abstract: An information processing apparatus includes a generation unit that generates simulation data including a plurality of combinations of unprocessed data of a workpiece and processed data of the workpiece after a process is performed on the workpiece under a predetermined process condition. Each of the plurality of combinations includes the unprocessed data and the processed data when the process is performed with a plurality of pattern densities for each of a plurality of mask shapes. The information processing apparatus further includes a derivation unit that derives simulation parameters of a shape simulator based on a closeness between predicted data that is predicted by inputting the unprocessed data included in the simulation data to the shape simulator, and the processed data combined with the unprocessed data.

公开(公告)号：US20150294839A1

公开(公告)日：2015-10-15

申请号：US14681161

申请日：2015-04-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKABA ,  Tetsuya NISHIZUKA ,  Naoki MATSUMOTO ,  Michitaka AITA ,  Takashi MINAKAWA ,  Kazuki TAKAHASHI ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME ,  Naoki MIHARA ,  Hiroyuki KONDO

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/3222

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.

Abstract translation: 公开了一种等离子体处理装置，其包括处理容器，放置台，中央引入部和周边引入部。 中心介绍部分在放置台上方提供。 中心介绍沿着穿过放置台的中心的轴线向放置台引入气体。 周边引入部设置在中心引导部和放置台的上表面之间的高度方向。 另外，周边导入部沿着侧壁形成。 周边引入部分提供沿相对于轴线沿圆周方向布置的多个气体喷射口。 当气体喷射口靠近轴线时，周边引入部分的多个气体喷射口远离放置台延伸。

公开(公告)号：US20140170845A1

公开(公告)日：2014-06-19

申请号：US14187609

申请日：2014-02-24

Applicant: Tokyo Electron Limited

Inventor： Tetsuya NISHIZUKA ,  Masahiko TAKAHASHI

IPC: H01L21/28 ,  H01L21/306

CPC classification number: H01L21/32137 ,  H01L21/28 ,  H01L21/28008 ,  H01L21/306 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.

Abstract translation: 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率，在所述半导体衬底上施加预定区域，从而去除所述导电层的预定区域 85 mTorr以上高压条件。

公开(公告)号：US20130065399A1

公开(公告)日：2013-03-14

申请号：US13668367

申请日：2012-11-05

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UDEA ,  Tetsuya NISHIZUKA ,  Toshihisa NOZAWA ,  Takaaki MATSUOKA

IPC: H01L21/3065 ,  H01L21/302

CPC classification number: C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

Abstract: A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing.

Abstract translation: 等离子体处理方法包括将晶片保持在保持台上，通过等离子体发生器在处理室内产生等离子体，以限定电子温度高于预定值的第一处理区域和电子温度低于预定值的第二处理区域 移动待定位在第一处理区域中的晶片的保持阶段，执行位于第一处理区域中的晶片的等离子体处理，移动待定位在第二处理区域中的晶片的保持台，以及 在等离子体处理完成之后晶片位于第二处理区域中停止产生等离子体。

公开(公告)号：US20250166976A1

公开(公告)日：2025-05-22

申请号：US19032757

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Yuta NAKANE ,  Kenta ONO ,  Sho KUMAKURA ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

IPC: H01J37/32

Abstract: A method for processing a substrate is disclosed. The method includes (a) providing a substrate on a substrate support in a processing chamber, the substrate having an underlying film and a resist film disposed on the underlying film and formed of a metal-containing resist, and the resist film having a first region and a second region. The method further includes (b) dry-developing the resist film by supplying a processing gas containing a carboxylic acid into the processing chamber, exposing the substrate to the carboxylic acid, and selectively removing the second region with respect to the first region. In the (b), a pressure or a partial pressure of the carboxylic acid is 0.3 Torr (40 Pa) or more and less than 100 Torr (13,332 Pa).

公开(公告)号：US20250149299A1

公开(公告)日：2025-05-08

申请号：US19012955

申请日：2025-01-08

Applicant: Tokyo Electron Limited

Inventor： Takayuki KATSUNUMA ,  Masanobu HONDA ,  Tetsuya NISHIZUKA

IPC: H01J37/32

Abstract: The plasma processing system includes a plasma processing device, an assistance device, and a control device, in which the assistance device includes a first determination unit for determining, using a first machine learning model, a plurality of control parameters for processing a pre-processing substrate so that a predicted shape of the post-processing substrate conforms a required shape of the post-processing substrate based on a first input related to a structure of the pre-processing substrate, a second input related to a required shape of the post-processing substrate, a third input related to a specification of the plasma processing device, and a fourth input related to a state of the plasma processing device, and a second determination 10 unit for determining an operating condition of the plasma processing device using a second machine learning model, based on the plurality of determined control parameters, the third input, and the fourth input.

公开(公告)号：US20250164886A1

公开(公告)日：2025-05-22

申请号：US19033671

申请日：2025-01-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Kenta ONO ,  Yuta NAKANE ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

IPC: G03F7/36 ,  G03F7/00 ,  G03F7/30 ,  H01L21/311

Abstract: In one exemplary embodiment, a substrate processing method is provided. The method includes (a) providing a substrate on a substrate support, the substrate having an underlying film and a metal-containing resist film on the underlying film, the metal-containing resist film including a first region and a second region; and (b) developing the metal-containing resist film to selectively remove the second region from the metal-containing resist film, in which the (b) includes (b1) removing the second region with respect to the first region at a first selectivity, and (b2) further removing the second region with respect to the first region at a second selectivity different from the first selectivity.

公开(公告)号：US20240047220A1

公开(公告)日：2024-02-08

申请号：US18454624

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Kenta ONO ,  Shinya ISHIKAWA ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01L21/0274 ,  H01L21/3065 ,  H01J2237/334

Abstract: One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.