公开(公告)号：US20130065399A1

公开(公告)日：2013-03-14

申请号：US13668367

申请日：2012-11-05

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UDEA ,  Tetsuya NISHIZUKA ,  Toshihisa NOZAWA ,  Takaaki MATSUOKA

IPC: H01L21/3065 ,  H01L21/302

CPC classification number: C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

Abstract: A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing.

Abstract translation: 等离子体处理方法包括将晶片保持在保持台上，通过等离子体发生器在处理室内产生等离子体，以限定电子温度高于预定值的第一处理区域和电子温度低于预定值的第二处理区域 移动待定位在第一处理区域中的晶片的保持阶段，执行位于第一处理区域中的晶片的等离子体处理，移动待定位在第二处理区域中的晶片的保持台，以及 在等离子体处理完成之后晶片位于第二处理区域中停止产生等离子体。