公开(公告)号：US20150069674A1

公开(公告)日：2015-03-12

申请号：US14542793

申请日：2014-11-17

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY

Inventor： Masahiro OKESAKU ,  Tadahiro OHMI ,  Tetsuya GOTO ,  Takaaki MATSUOKA ,  Toshihisa NOZAWA ,  Atsutoshi INOKUCHI ,  Kiyotaka ISHIBASHI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract translation: 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20150325448A1

公开(公告)日：2015-11-12

申请号：US14801418

申请日：2015-07-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takaaki MATSUOKA ,  Toshihisa NOZAWA ,  Toshiyasu HORI

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Abstract translation: 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

公开(公告)号：US20130065399A1

公开(公告)日：2013-03-14

申请号：US13668367

申请日：2012-11-05

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UDEA ,  Tetsuya NISHIZUKA ,  Toshihisa NOZAWA ,  Takaaki MATSUOKA

IPC: H01L21/3065 ,  H01L21/302

CPC classification number: C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

Abstract: A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing.

Abstract translation: 等离子体处理方法包括将晶片保持在保持台上，通过等离子体发生器在处理室内产生等离子体，以限定电子温度高于预定值的第一处理区域和电子温度低于预定值的第二处理区域 移动待定位在第一处理区域中的晶片的保持阶段，执行位于第一处理区域中的晶片的等离子体处理，移动待定位在第二处理区域中的晶片的保持台，以及 在等离子体处理完成之后晶片位于第二处理区域中停止产生等离子体。