公开(公告)号：US20170125261A1

公开(公告)日：2017-05-04

申请号：US15333323

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo MIYAMA ,  Kazuki MOYAMA ,  Toshihisa NOZAWA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01J37/3244 ,  H01J2237/3345 ,  H01L21/02244 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069 ,  H01L43/12

Abstract: Disclosed is a method of anisotropically etching a transition metal film using a substrate processing apparatus including at least one processing container configured to perform a processing on a workpiece including the transition metal film. The method includes an oxidation step of introducing a first gas containing an oxygen ion into the processing container and irradiating the transition metal film with the oxygen ion to oxidize a transition metal of the transition metal film, thereby forming a metal oxide layer; and a complexation/etching step of introducing a second gas for complexation of the metal oxide layer into the processing container and forming a metal complex in the metal oxide layer, thereby performing an etching.

公开(公告)号：US20150159269A1

公开(公告)日：2015-06-11

申请号：US14609851

申请日：2015-01-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Shinji KOMOTO ,  Masahide IWASAKI

IPC: C23C16/44 ,  C23C16/511

CPC classification number: C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

公开(公告)号：US20130065399A1

公开(公告)日：2013-03-14

申请号：US13668367

申请日：2012-11-05

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UDEA ,  Tetsuya NISHIZUKA ,  Toshihisa NOZAWA ,  Takaaki MATSUOKA

IPC: H01L21/3065 ,  H01L21/302

CPC classification number: C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

Abstract: A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing.

Abstract translation: 等离子体处理方法包括将晶片保持在保持台上，通过等离子体发生器在处理室内产生等离子体，以限定电子温度高于预定值的第一处理区域和电子温度低于预定值的第二处理区域 移动待定位在第一处理区域中的晶片的保持阶段，执行位于第一处理区域中的晶片的等离子体处理，移动待定位在第二处理区域中的晶片的保持台，以及 在等离子体处理完成之后晶片位于第二处理区域中停止产生等离子体。

公开(公告)号：US20160189934A1

公开(公告)日：2016-06-30

申请号：US14971811

申请日：2015-12-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779

Abstract: Provided is a plasma processing apparatus that processes a substrate by converting a processing gas into plasma. A plurality of rotatable substrate stages are provided at a lower side within a processing container. An upper electrode is provided at an upper side within the processing container. The upper electrode is supplied with a high frequency wave from a high frequency power source to convert a processing gas supplied into the processing container into plasma. The upper electrode is rotatable about a vertical portion of an electrode support member by a driving mechanism and a rotary mechanism.

Abstract translation: 提供了一种等离子体处理装置，其通过将处理气体转化为等离子体来处理基板。 在处理容器内的下侧设有多个可转动的基底台。 上部电极设置在处理容器内的上侧。 向上电极供给来自高频电源的高频波，将供给到处理容器的处理气体转换为等离子体。 上电极通过驱动机构和旋转机构围绕电极支撑构件的垂直部分旋转。

公开(公告)号：US20160189931A1

公开(公告)日：2016-06-30

申请号：US14975238

申请日：2015-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/455 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32559 ,  H01J37/32715 ,  H01J37/32853

Abstract: Disclosed is a plasma processing apparatus including a processing container configured to air-tightly accommodate a substrate; and a placing table provided in the processing container and configured to place the substrate thereon. A surface of a support member that is exposed to plasma in the processing container and configured to support a top plate portion of the processing container, and a surface of a member that is exposed to plasma in the processing container and continued from the support member, are coated with different materials.

Abstract translation: 公开了一种等离子体处理装置，其包括：配置为气密地容纳基板的处理容器; 以及放置台，设置在处理容器中，并配置成将基板放置在其上。 在处理容器中暴露于等离子体并被构造成支撑处理容器的顶板部分的支撑构件的表面和在处理容器中暴露于等离子体并从支撑构件继续的构件的表面， 涂有不同的材料。

公开(公告)号：US20160020135A1

公开(公告)日：2016-01-21

申请号：US14854226

申请日：2015-09-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei KAWAMURA ,  Yasuo KOBAYASHI ,  Toshihisa NOZAWA ,  Kiyotaka ISHIBASHI

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract translation: 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US20140251541A1

公开(公告)日：2014-09-11

申请号：US14200386

申请日：2014-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihiko IWAO ,  Toshihisa NOZAWA

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32229

Abstract: Disclosed is a plasma processing apparatus including: a processing container having a cylindrical columnar shape centering around a predetermined axis and defining a processing space therein; a plurality of columnar dielectric bodies installed at a top side of the processing space; a microwave generator configured to generate microwaves; a waveguide unit configured to connect the microwave generator and the plurality of columnar dielectric bodies; and a stage installed within the processing container to intersect with the predetermined axis. The plurality of columnar dielectric bodies are arranged at predetermined intervals along a circumferential direction around the predetermined axis within the processing space. The waveguide unit branches microwaves input from the microwave generator and supplies the branched microwaves to the plurality of columnar dielectric bodies.

Abstract translation: 公开了一种等离子体处理装置，包括：处理容器，其具有以预定轴线为中心的圆柱形柱状，并在其中限定处理空间; 安装在处理空间的顶侧的多个柱状介电体; 构造成产生微波的微波发生器; 波导单元，被配置为连接所述微波发生器和所述多个柱状介电体; 以及安装在处理容器内以与预定轴相交的平台。 多个柱状电介质体在处理空间内围绕预定轴线沿圆周方向以预定间隔布置。 波导单元分支从微波发生器输入的微波，并将分支的微波提供给多个柱状介电体。

公开(公告)号：US20140231016A1

公开(公告)日：2014-08-21

申请号：US14159546

申请日：2014-01-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Toshihisa NOZAWA ,  Naoki MATSUMOTO ,  Peter L. G. VENTZEK

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

Abstract: Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region.

Abstract translation: 公开了一种包括限定处理空间的处理容器，安装台和微波引入天线的等离子体处理装置。 安装台包括安装在容纳在处理容器中的工件的安装区域。 微波引入天线包括安装在安装台上方的电介质窗口。 电介质窗口包括邻接处理空间的底面区域。 底表面区域被构造成环形，以限制表面波传播到安装区域的边缘上方的区域。

公开(公告)号：US20170011886A1

公开(公告)日：2017-01-12

申请号：US15203982

申请日：2016-07-07

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU TECHNO ARCH CO., LTD

Inventor： Toshihisa NOZAWA ,  Kazuki MOYAMA ,  Ryo MIYAMA ,  Seiji SAMUKAWA

IPC: H01J37/32 ,  C23C16/50

CPC classification number: C23C16/50 ,  C23C16/4401 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32467

Abstract: Disclosed is a plasma processing apparatus including: a processing container; and a partition plate made of an insulating material, having a plurality of openings, and configured to partition an inside of the processing container into a plasma generating chamber and a processing chamber. A first conductive member made of a conductive material is provided on a surface of the processing chamber side of the partition plate, and the first conductive member is applied with at least one of an AC voltage, and a DC voltage of a polarity that is opposite to a polarity of charged particles guided from the plasma generating chamber into the processing chamber through each of the openings.

Abstract translation: 一种等离子体处理装置，包括：处理容器; 以及由绝缘材料制成的隔板，具有多个开口，并被构造成将处理容器的内部分隔成等离子体产生室和处理室。 在隔板的处理室侧的表面上设置由导电材料制成的第一导电构件，并且向第一导电构件施加交流电压和极性相反的直流电压中的至少一个 到通过每个开口从等离子体产生室引导到处理室中的带电粒子的极性。

公开(公告)号：US20150325448A1

公开(公告)日：2015-11-12

申请号：US14801418

申请日：2015-07-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takaaki MATSUOKA ,  Toshihisa NOZAWA ,  Toshiyasu HORI

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Abstract translation: 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。