公开(公告)号：US20220399212A1

公开(公告)日：2022-12-15

申请号：US17887061

申请日：2022-08-12

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Hironari SASAGAWA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/67 ,  H01L21/033 ,  C23C16/50 ,  C23C16/46 ,  C23C16/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3065

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

公开(公告)号：US20210375602A1

公开(公告)日：2021-12-02

申请号：US17330729

申请日：2021-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hironari SASAGAWA ,  Sho KUMAKURA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065

Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.

公开(公告)号：US20210233778A1

公开(公告)日：2021-07-29

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju TOMURA ,  Tomohiko NIIZEKI ,  Takayuki KATSUNUMA ,  Hironari SASAGAWA ,  Yuta NAKANE ,  Shinya ISHIKAWA ,  Kenta ONO ,  Sho KUMAKURA ,  Yusuke TAKINO ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US20200279757A1

公开(公告)日：2020-09-03

申请号：US16804807

申请日：2020-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho KUMAKURA ,  Hironari SASAGAWA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/67 ,  H01L21/033 ,  H01L21/027 ,  C23C16/46 ,  C23C16/02 ,  C23C16/50

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

公开(公告)号：US20240120187A1

公开(公告)日：2024-04-11

申请号：US18389827

申请日：2023-12-20

Applicant: Tokyo Electron Limited

Inventor： Hironari SASAGAWA ,  Sho KUMAKURA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32935 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/334

Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.

公开(公告)号：US20210233777A1

公开(公告)日：2021-07-29

申请号：US17160460

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hironari SASAGAWA ,  Maju TOMURA

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.

公开(公告)号：US20230369032A1

公开(公告)日：2023-11-16

申请号：US18195463

申请日：2023-05-10

Applicant: Tokyo Electron Limited

Inventor： Ryo IGOSAWA ,  Hironari SASAGAWA

IPC: H01J37/32 ,  G05B13/02 ,  G05B13/04

CPC classification number: H01J37/32926 ,  G05B13/0265 ,  G05B13/042 ,  H01J2237/334

Abstract: An etching processing apparatus includes a storage that stores a learned model of each group generated by each learning processing in a case where each processing condition acquired during execution of a specific step of an etching processing, is classified into a plurality of groups according to a difference in effects when executing the specific step, and the learning processing is performed for each group; an updating unit that updates the learned model of a specific group when an effect of executing the specific step on a test wafer using setting data included in a processing condition associated with the specific group is not equivalent to an effect associated with the specific group; and a searching unit that searches for, using the updated learned model, setting data capable of obtaining the effect associated with the specific group when the specific step is executed on the test wafer.

公开(公告)号：US20220301881A1

公开(公告)日：2022-09-22

申请号：US17832683

申请日：2022-06-06

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Sho KUMAKURA ,  Hironari SASAGAWA ,  Yoshihide KIHARA

IPC: H01L21/311 ,  H01J37/32

Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.

公开(公告)号：US20200279733A1

公开(公告)日：2020-09-03

申请号：US16803377

申请日：2020-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho KUMAKURA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Hironari SASAGAWA

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.