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公开(公告)号：US20240147719A1
公开(公告)日：2024-05-02
申请号：US17978674
申请日：2022-11-01
发明人： Soo Doo Chae , Lior Huli , Steven Gueci , Hojin Kim , Henan Zhang , Na Young Bae
IPC分类号： H01L27/11582
CPC分类号： H01L27/11582
摘要： In certain embodiments, a method includes forming, on a substrate by spin-on deposition, a layer stack of alternating layers of first and second carbon-containing materials. The layers of the first carbon-containing material include an agent-generating ingredient for generating a solubility-changing agent in response to an activation trigger. The method includes executing the activation trigger in response to which the solubility-changing agent is generated from the agent-generating ingredient in the layers of the first carbon-containing material and modifies the layers of the first carbon-containing material to be soluble in a developer. The method includes etching first openings through the layer stack, filling the first openings with a third material, etching second openings through the layer stack, removing the layers of the first carbon-containing material from the layer stack by exposing those to the developer, and replacing the layers of the first carbon-containing material with a fourth material.
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公开(公告)号：US11383211B2
公开(公告)日：2022-07-12
申请号：US16560481
申请日：2019-09-04
发明人： Ronald W. Nasman , Lior Huli , Anton deVilliers , Rodney Robison , Norman Jacobson , James Grootegoed
摘要： A method and a system are described for mixing liquid chemicals at dynamically changing or static ratios during a given dispense, with extremely high uniformity and repeatability. A mixer includes multiple fluid supply lines including elongate bladders defining a linear flow path and being configured to laterally expand to collect a process fluid and laterally contract to deliver a selected volume of the process fluid to the mixer.
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公开(公告)号：US11243465B2
公开(公告)日：2022-02-08
申请号：US16221030
申请日：2018-12-14
发明人： Wanjae Park , Lior Huli , Soo Doo Chae
摘要： Embodiments of methods for patterning using enhancement of surface adhesion are presented. In an embodiment, a method for patterning using enhancement of surface adhesion may include providing an input substrate with an anti-reflective coating layer and an underlying layer. Such a method may also include performing a surface adhesion modification process on the substrate, the surface adhesion modification process utilizing a plasma treatment configured to increase an adhesion property of an anti-reflective coating layer without affecting downstream processes. In an embodiment, the method may also include performing a photoresist coating process, a mask exposure process, and a developing process to generate a target patterned structure in a photoresist layer on the substrate. In such embodiments, the method may include controlling operating parameters of the surface adhesion modification process to achieve target profiles of the patterned structure and substrate throughput objectives.
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公开(公告)号：US09991133B2
公开(公告)日：2018-06-05
申请号：US15675372
申请日：2017-08-11
发明人： Cheryl Pereira , Nihar Mohanty , Lior Huli
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/321
CPC分类号： H01L21/3212 , H01L21/31055 , H01L21/31122 , H01L2221/1005
摘要： Techniques herein provide an etch-based planarization technique. An initial film is deposited on a substrate. Deposition of this initial film results in a non-planar film because of differences in area density of underlying structures (for example, open areas compared to closely spaced trenches). Etch processes are executed that use a reverse lag RIE process to planarize the initial film, and then another coat of the film material can be deposited, resulting in a planar surface. Such techniques can planarized substrates without using chemical mechanical polishing (CMP).
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公开(公告)号：US20170221704A1
公开(公告)日：2017-08-03
申请号：US15416645
申请日：2017-01-26
发明人： Nihar Mohanty , Lior Huli , Jeffrey Smith , Richard Farrell
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： H01L21/02359 , C23C16/45525 , H01L21/02175 , H01L21/02186 , H01L21/02282 , H01L21/02307 , H01L21/02315 , H01L21/02334 , H01L21/0234 , H01L21/0332
摘要： Techniques herein provide methods for depositing spin-on metal materials for creating metal hard mask (MHM) structures without voids in the deposition. This includes effective spin-on deposition of TiOx, ZrOx, SnOx, HFOx, TaOx, et cetera. Such materials can help to provide differentiation of material etch resistivity for differentiation. By enabling spin-on metal hard mask (MHM) for use with a multi-line layer, a slit-based or self-aligned blocking strategy can be effectively used. Techniques herein include identifying a fill material to fill particular openings in a given relief pattern, modifying a surface energy value of surfaces within the opening such that a contact angle value of an interface between the fill material in liquid form and the sidewall or floor surfaces enables gap-free or void-free filling.
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6.发明申请EXTREME ULTRA-VIOLET SENSITIVITY REDUCTION USING SHRINK AND GROWTH METHOD 审中-公开使用收缩和增长方法极大的超紫外线灵敏度降低公开(公告)号：US20160334709A1
公开(公告)日：2016-11-17
申请号：US15152950
申请日：2016-05-12
发明人： Lior Huli , Nihar Mohanty
CPC分类号： G03F7/40
摘要： Provided is a method for patterning a substrate, comprising: forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using a lithographic process, the pattern being characterized by a critical dimension (CD) and a roughness; following the preparing the pattern, performing a CD shrink process to reduce the CD to a reduced CD; and performing a growth process to grow the reduced CD to a target CD. Roughness includes a line edge roughness (LER), a line width roughness (LWR), or both LER and LWR. Performing the CD shrink process comprises: coating the pattern with a hard mask, the coating generating a hard mask coated resist; baking the hard mask coated resist in a temperature range for a time period, the baking generating a baked coated resist; and developing the baked coated resist in deionized water.
摘要翻译： 提供了一种用于图案化衬底的方法，包括：在衬底上形成辐射敏感材料层; 使用光刻工艺在辐射敏感材料层中制备图案，该图案的特征在于临界尺寸（CD）和粗糙度; 在准备模式之后，执行CD收缩过程以将CD减少到减少的CD; 并执行增长过程以将减少的CD增长到目标CD。 粗糙度包括线边缘粗糙度（LER），线宽粗糙度（LWR）或LER和LWR两者。 执行CD收缩过程包括：用硬掩模涂覆图案，该涂层产生硬掩模涂布的抗蚀剂; 在温度范围内烘烤硬掩模涂布的抗蚀剂一段时间，烘焙产生烘烤的涂覆抗蚀剂; 并在去离子水中显影烘烤的涂覆的抗蚀剂。
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7.发明申请TRACK PROCESSING TO REMOVE ORGANIC FILMS IN DIRECTED SELF-ASSEMBLY CHEMO-EPITAXY APPLICATIONS 有权用于指导自组织化学外观应用中的有机膜的跟踪处理公开(公告)号：US20140273472A1
公开(公告)日：2014-09-18
申请号：US14208160
申请日：2014-03-13
发明人： Mark H. Somervell , David Hetzer , Lior Huli
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/42 , G03F7/422 , G03F7/425
摘要： A method is provided for preparing a prepatterned substrate for use in DSA integration. In one example, the method includes removing a radiation-sensitive material pattern overlying a patterned cross-linked polystyrene copolymer layer by a) exposure to a solvent vapor, b) exposure to a liquid solvent, and c) repeating steps a)-b) until the radiation-sensitive material pattern is completely removed. In another example, the method includes removing a neutral layer by affecting removal of an underlying patterned radiation-sensitive material layer, which includes swelling the neutral layer; and removing the radiation-sensitive material pattern and the swollen neutral layer in portions by exposing the swollen layer and pattern to a developer solution. Swelling the neutral layer includes a) exposure to a solvent vapor; b) exposure to a liquid solvent; and c) repeating steps a)-b) until the neutral layer is sufficiently swollen to allow penetration of the developing solution through the swollen neutral layer.
摘要翻译： 提供了一种用于制备用于DSA整合的预制图案化基板的方法。 在一个实例中，该方法包括通过以下步骤除去覆盖图案化的交联聚苯乙烯共聚物层的辐射敏感材料图案：a）暴露于溶剂蒸气，b）暴露于液体溶剂，和c）重复步骤a）-b） 直到辐射敏感材料图案被完全去除。 在另一个实例中，该方法包括通过影响底层图案化的辐射敏感材料层的去除而去除中性层，其包括使中性层膨胀; 并通过将溶胀层和图案暴露于显影剂溶液来部分地去除辐射敏感材料图案和溶胀中性层。 膨胀中性层包括a）暴露于溶剂蒸气; b）暴露于液体溶剂; 和c）重复步骤a）-b），直到中性层充分膨胀以允许显影溶液穿透膨胀的中性层。
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公开(公告)号：US20230078946A1
公开(公告)日：2023-03-16
申请号：US17943729
申请日：2022-09-13
发明人： Steven Grzeskowiak , Lior Huli , Angelique Raley , Cong Que Dinh , Makoto Muramatsu , Seiji Nagahara
摘要： A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.
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公开(公告)号：US20220262679A1
公开(公告)日：2022-08-18
申请号：US17177379
申请日：2021-02-17
发明人： Junling Sun , Lior Huli , Andrew Metz , Angelique Raley
IPC分类号： H01L21/768 , H01L21/311 , H01L21/3105
摘要： Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-aligned contacts by using spin-on SiC as a cap layer for at least one other structure, instead of depositing a SiC layer via plasma vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The other structure may be a source and drain contact made through the use of a trench conductor. By utilizing spin-on SiC as a cap layer material, the disclosed methods and process flows avoid problems that typically occur when SiC is deposited, for example by CVD, and subsequently planarized. As such, the disclosed methods and process flows improve upon conventional methods and process flows for forming self-aligned contacts by reducing defectivity and improving yield.
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公开(公告)号：US10935889B2
公开(公告)日：2021-03-02
申请号：US15152950
申请日：2016-05-12
发明人： Lior Huli , Nihar Mohanty
IPC分类号： G03F7/40
摘要： Provided is a method for patterning a substrate, comprising: forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using a lithographic process, the pattern being characterized by material structures having a critical dimension (CD) and a roughness; following the preparing the pattern, performing a shrink process to reduce the CD to a reduced CD; and performing a growth process to grow the reduced CD to a target CD. Roughness includes a line edge roughness (LER), a line width roughness (LWR), or both LER and LWR. Performing the shrink process comprises: coating the pattern with a hard mask, the coating generating a hard mask coated resist; baking the hard mask coated resist in a temperature range for a time period, the baking generating a baked coated resist; and developing the baked coated resist in deionized water.
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