知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

16 条记录 (耗时 0.016 秒)

    Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component
    5.
    发明授权
    Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component 有权
    场效应控制半导体元件以及在垂直配置的半导体元件中制造掺杂层的方法

    公开(公告)号：US06828605B2

    公开(公告)日：2004-12-07

    申请号：US10013997

    申请日：2001-12-11

    申请人： Ignaz Eisele ,  Walter Hansch ,  Christoph Fink ,  Wolfgang Werner

    发明人： Ignaz Eisele ,  Walter Hansch ,  Christoph Fink ,  Wolfgang Werner

    IPC分类号： H01L2976

    CPC分类号： H01L29/7813 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/365 ,  H01L29/66659 ,  H01L29/7835

    摘要： A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.

    摘要翻译： 场效应可控半导体元件具有至少一个源极区和至少一个第一导电类型的漏极区和至少一个第二导电类型的体区。 体区设置在源区和排水区之间。 在每种情况下，第二导电类型的至少第一和第二区域设置在通道区域中。 第一区域具有第一掺杂浓度，第二区域具有低于第一掺杂浓度的第二掺杂浓度。 两个区域的组合产生大于零的半导体元件阈值电压，并且导通电阻低于仅由掺杂有第一或第二掺杂浓度的沟道区引起的导通电阻。

    HAFNIUM OXIDE ALD PROCESS
    6.
    发明申请
    HAFNIUM OXIDE ALD PROCESS 失效
    氧化铪工艺

    公开(公告)号：US20090162551A1

    公开(公告)日：2009-06-25

    申请号：US11963068

    申请日：2007-12-21

    申请人： Thomas Zilbauer ,  Ignaz Eisele ,  Jan Matusche ,  Ursula Ingeborg Schmidt

    发明人： Thomas Zilbauer ,  Ignaz Eisele ,  Jan Matusche ,  Ursula Ingeborg Schmidt

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4407 ,  C23C16/405 ,  C23C16/4482 ,  C23C16/45525

    摘要： A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

    摘要翻译： 提供了一种用于在衬底上进行氧化铪沉积的方法和装置。 该设备包括处理室，前体递送子系统，氧化剂递送子系统，吹扫气体子系统，溶剂冲洗子系统和任选的溶剂回收和纯化子系统。 该方法包括依次将前体化合物脉冲化成工艺室。 当一个前体被脉冲时，通过另一个前体管线提供净化气体。 在脉冲之后，将前体管线清除，并将室抽真空并吹扫。 使用溶剂冲洗步骤来去除在管道中随时间累积的前体沉积物。

    Hafnium oxide ALD process
    7.
    发明授权
    Hafnium oxide ALD process 失效
    氧化铪ALD工艺

    公开(公告)号：US08016945B2

    公开(公告)日：2011-09-13

    申请号：US11963068

    申请日：2007-12-21

    申请人： Thomas Zilbauer ,  Ignaz Eisele ,  Jan Matusche ,  Ursula Ingeborg Schmidt

    发明人： Thomas Zilbauer ,  Ignaz Eisele ,  Jan Matusche ,  Ursula Ingeborg Schmidt

    IPC分类号： C23C16/06 ,  C23C16/14 ,  C23C16/18 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44

    CPC分类号： C23C16/4407 ,  C23C16/405 ,  C23C16/4482 ,  C23C16/45525

    摘要： A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

    摘要翻译： 提供了一种用于在衬底上进行氧化铪沉积的方法和装置。 该设备包括处理室，前体递送子系统，氧化剂递送子系统，吹扫气体子系统，溶剂冲洗子系统和任选的溶剂回收和纯化子系统。 该方法包括依次将前体化合物脉冲化成工艺室。 当一个前体被脉冲时，通过另一个前体管线提供净化气体。 在脉冲之后，将前体管线清除，并将室抽真空并吹扫。 使用溶剂冲洗步骤来去除在管道中随时间累积的前体沉积物。

    Field effect transistor having a surface channel and its method of operation
    9.
    发明授权
    Field effect transistor having a surface channel and its method of operation 失效
    具有表面通道的场效应晶体管及其操作方法

    公开(公告)号：US4219829A

    公开(公告)日：1980-08-26

    申请号：US793714

    申请日：1977-05-04

    申请人： Gerhard Dorda ,  Ignaz Eisele

    发明人： Gerhard Dorda ,  Ignaz Eisele

    IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/10 ,  H01L29/167 ,  H01L29/207 ,  H01L29/66 ,  H01L29/78 ,  H01L29/812 ,  H01L29/72

    CPC分类号： H01L29/66992 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/167 ,  H01L29/207 ,  H01L29/78

    摘要： A field effect transistor includes a semiconductor substrate of a first conductivity having a source zone and a drain zone of an opposite, second conductivity spaced apart therein and extending to the surface thereof. A surface channel adjoins the surface, is of the second conductivity, and extends in an area located between the source and drain zones. A gate electrode is carried above the surface channel, either on an insulator, or directly on the surface to form a Schottky junction. A second zone lies beneath the surface below or in overlapping relation to the surface channel and extends between the drain and source zones. The second channel is doped with dopant particles whose energy level in the forbidden band of the semiconductor substrate, at an operating temperature T, lies at a distance of more than 1/2 kT from the conduction band edge and valence band edge of the semiconductor substrate. Application of proper potentials with respect to the start voltage required for ionization of the dopant particles in the second channel causes the field effect transistor to function as a high-speed switch. Connection of the field effect transistor in series with a resistance between the poles of a power supply which has a voltage greater than the start voltage causes the field effect transistor to operate, in combination with the resistor, as an oscillator.

    摘要翻译： 场效应晶体管包括具有第一导电性的半导体衬底，该半导体衬底具有源极区和漏极区，其间隔开并延伸到其表面。 表面通道邻接表面，具有第二导电性，并且在位于源极和漏极区之间的区域中延伸。 栅极电极在绝缘体上方或表面上直接承载在表面通道上方，以形成肖特基结。 第二区位于表面下方或与表面通道重叠的表面下方，并在漏区和源区之间延伸。 第二通道掺杂有掺杂剂颗粒，其在半导体衬底的禁带中的工作温度T处的能级与半导体衬底的导带边缘和价带边缘之间的距离大于1/2 kT 。 对于第二通道中的掺杂剂粒子的电离所需的起始电压的适当电位的施加使得场效应晶体管起到高速开关的作用。 与具有大于启动电压的电压的电源极之间的电阻与场效应晶体管的串联连接使得场效应晶体管与电阻一起作为振荡器工作。

    Magnetic field sensitive diode and method of making same
    10.
    发明授权
    Magnetic field sensitive diode and method of making same 失效
    磁场敏感二极管及其制作方法

    公开(公告)号：US4017884A

    公开(公告)日：1977-04-12

    申请号：US683208

    申请日：1976-05-04

    申请人： Ignaz Eisele ,  Hans Pfleiderer ,  Ekkehard Preuss

    发明人： Ignaz Eisele ,  Hans Pfleiderer ,  Ekkehard Preuss

    IPC分类号： H01L29/82 ,  H01L27/22 ,  H01L29/96 ,  H01L43/00

    CPC分类号： H01L29/82

    摘要： A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.

    摘要翻译： 一种磁场敏感二极管，包括位于主体间隔部分处的硅体，n注入接触电极和p注入接触电极，所述主体具有相对于成对的自由电荷载体具有不同复合速率的相对的平行表面， 具有由二氧化硅组成的较低复合速率的表面，由锂扩散组成的n注入接触电极与硅体中的基本上所有的受体均由掺入的锂离子补偿，二氧化硅表面基本上不含锂 。 本发明还涉及一种制造改进结构的方法。