摘要:
A FET type gas-sensitive device has a floating electrode formed in a horizontal direction. The device achieves noise reduction, process simplification, pollution control, sensing speed improvement, various sensing material applicability and mechanical stability etc. in comparison with a gas-sensitive device that is vertically stacked with a floating electrode, a sensing material layer and a control electrode. The device can be assembled easily with a plurality of gas-sensitive devices being operated by various sensing mechanisms in one substrate.
摘要:
A gas-measuring chip (10), used with a gas-measuring device (100) of a portable chip measurement system, has a carrier (11) and measuring channels (20, 20′, 20″). A regenerable, nonconsumable sensor (30, 30′, 30″) is arranged in each measuring channel. A method includes inserting the gas-measuring chip (10) into the gas-measuring device (100) and connecting one measuring channel of the gas-measuring chip (10) to a pumping system (120, 121) of the gas-measuring device (100). A measurement is carried out with a first measuring channel (20, 20′, 20′) with a switching over to a measuring channel different from the first measuring channel. The sensors (30, 30′, 30″) of the measuring channel used last is regenerated and optionally simultaneously there is a measurement with the measuring channel switched over to. There is a switching over to a measuring channel, which is different from the measuring channel last used for the measurement.
摘要:
A layer system having a layer region, whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface only partially.
摘要:
A device for detecting at least one gaseous analyte comprises a detection section including a semiconductor substrate and at least one sensor element, which is arranged on the semiconductor substrate. The at least one sensor element includes two electrodes and a solid electrolyte layer arranged between the electrodes. The device also comprises a protective cap configured to cover the at least one sensor element, and at least one temperature-control unit configured for temperature control of the protective cap. The at least one temperature-control unit is arranged on the protective cap. The protective cap is formed from a semiconductor material. The device further comprises a diffusion section having a plurality of passage openings for the gaseous analyte arranged at least in a partial section of the protective cap.
摘要:
The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be coupled to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be coupled to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.
摘要:
One or more charge pumps may be used to amplify the output voltage from a chemically-sensitive pixel that comprises one or more transistors. A charge pump may include a number of track stage switches, a number of boost phase switches and a number of capacitors. The capacitors are in parallel during the track phase and in series during the boost phase, and the total capacitance is divided during the boost phase while the total charge remains fixed. Consequently, the output voltage is pushed up.
摘要:
A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.
摘要:
Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.
摘要:
To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be created to allow both common source read out as well as source follower read out. A plurality of the 1T pixels may form an array, having a number of rows and a number of columns and a column readout circuit in each column. A cascoded device enabled during readout may be used to provide increased programmable gain.
摘要:
Methods are described for reading a chemically-sensitive field-effect transistor (chemFET) with an improved signal-to-noise ratio. In one embodiment, a method is described for reading a chemFET having a first terminal and a second terminal, and a floating gate coupled to a passivation layer. The method includes biasing the first terminal of the chemFET to a first bias voltage during a read interval. The second terminal of the chemFET is coupled to a data line during the read interval. A current is induced through the chemFET via the data line. An output signal proportional to an integral of a voltage or current on the data line is generated in response to the induced current through the chemFET during the read interval.