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公开(公告)号：US20140131774A1
公开(公告)日：2014-05-15
申请号：US14073091
申请日：2013-11-06
发明人： Jong-Ho Lee , Chang-Hee Kim
IPC分类号： G01N27/414
CPC分类号： G01N27/4143
摘要： A FET type gas-sensitive device has a floating electrode formed in a horizontal direction. The device achieves noise reduction, process simplification, pollution control, sensing speed improvement, various sensing material applicability and mechanical stability etc. in comparison with a gas-sensitive device that is vertically stacked with a floating electrode, a sensing material layer and a control electrode. The device can be assembled easily with a plurality of gas-sensitive devices being operated by various sensing mechanisms in one substrate.
摘要翻译： FET型气体敏感元件具有沿水平方向形成的浮动电极。 与垂直堆叠有浮动电极，感测材料层和控制电极的气敏装置相比，该装置实现了降噪，过程简化，污染控制，感测速度改进，各种感测材料适用性和机械稳定性等。 。 该装置可以容易地与由一个基板中的各种感测机构操作的多个气体敏感装置组装。
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公开(公告)号：US09903834B2
公开(公告)日：2018-02-27
申请号：US14073091
申请日：2013-11-06
发明人： Jong-Ho Lee , Chang-Hee Kim
IPC分类号： G01N27/403 , G01N27/414
CPC分类号： G01N27/4143
摘要： A FET type gas-sensitive device has a floating electrode formed in a horizontal direction. The device achieves noise reduction, process simplification, pollution control, sensing speed improvement, various sensing material applicability and mechanical stability etc. in comparison with a gas-sensitive device that is vertically stacked with a floating electrode, a sensing material layer and a control electrode. The device can be assembled easily with a plurality of gas-sensitive devices being operated by various sensing mechanisms in one substrate.
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