公开(公告)号：US4182965A

公开(公告)日：1980-01-08

申请号：US825148

申请日：1977-08-16

申请人： Hans Pfleiderer

发明人： Hans Pfleiderer

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/70 ,  H01L29/735 ,  H01L29/82 ,  H01L29/86 ,  H01L29/861 ,  H01L29/868 ,  H01L43/08

CPC分类号： H01L29/70 ,  H01L27/0814 ,  H01L27/092 ,  H01L27/12 ,  H01L29/705 ,  H01L29/735 ,  H01L29/82 ,  H01L29/868

摘要： A semiconductor device is disclosed in which an intrinsic or weakly doped semiconductor layer is arranged on a substrate. The semiconductor layer contains a first P doped zone and a first N doped zone which are separated by a portion of the said intrinsic layer serving as base zone. The semiconductor layer further contains a second P doped zone and a second N doped zone which are also separated from one another by the base zone. The four doped zones are arranged such that a connecting line between the second P doped zone and second N doped zone intersects a connecting line between the first P doped zone and the first N doped zone preferably at right angles. A sub-diode formed of the first doped zones affects the operation of a sub-diode formed by the second doped zones.

摘要翻译： 公开了一种半导体器件，其中本征或弱掺杂半导体层被布置在衬底上。 半导体层包含第一P掺杂区和第一N掺杂区，该第一P掺杂区和第一N掺杂区被作为基区的所述本征层的一部分分开。 半导体层还包含第二P掺杂区和第二N掺杂区，其也由基区彼此分离。 四个掺杂区被布置成使得第二P掺杂区和第二N掺杂区之间的连接线优选地以直角与第一P掺杂区和第一N掺杂区之间的连接线相交。 由第一掺杂区形成的子二极管影响由第二掺杂区形成的二极管的工作。

公开(公告)号：US4017884A

公开(公告)日：1977-04-12

申请号：US683208

申请日：1976-05-04

申请人： Ignaz Eisele ,  Hans Pfleiderer ,  Ekkehard Preuss

发明人： Ignaz Eisele ,  Hans Pfleiderer ,  Ekkehard Preuss

IPC分类号： H01L29/82 ,  H01L27/22 ,  H01L29/96 ,  H01L43/00

CPC分类号： H01L29/82

摘要： A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.

摘要翻译： 一种磁场敏感二极管，包括位于主体间隔部分处的硅体，n注入接触电极和p注入接触电极，所述主体具有相对于成对的自由电荷载体具有不同复合速率的相对的平行表面， 具有由二氧化硅组成的较低复合速率的表面，由锂扩散组成的n注入接触电极与硅体中的基本上所有的受体均由掺入的锂离子补偿，二氧化硅表面基本上不含锂 。 本发明还涉及一种制造改进结构的方法。

公开(公告)号：US5527716A

公开(公告)日：1996-06-18

申请号：US284444

申请日：1994-08-03

申请人： Wilhelm Kusian ,  Joze Furlan ,  Wolfgang Riedl ,  Hans Pfleiderer

发明人： Wilhelm Kusian ,  Joze Furlan ,  Wolfgang Riedl ,  Hans Pfleiderer

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/046 ,  H01L31/076 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/046 ,  Y02E10/548

摘要： Individual solar cells are disposed in a stacked-cell solar module alternately as p-i-n, n-i-p, p-i-n and so on, the solar-cell stack is patterned in strip-like fashion and the interconnection is carried out by means of comb-like electrode structures which connect the p-type sides of the solar cells of a stack to the n-type sides of the solar cells of the adjacent stack. The solar module, which can be produced in integrated form is connected in parallel within a stack and in series between the stacks. By simply repeating the manufacturing steps, stacks can be built in this way from two or more solar cells, which have a reduced light aging compared with known solar modules.

摘要翻译： PCT No.PCT / DE93 / 00051 Sec。 371日期1994年8月3日 102（e）日期1994年8月3日PCT 1993年1月22日PCT公布。 出版物WO93 / 15527 日期：1993年8月5日。个体太阳能电池以pin，nip，pin等方式交替排列在堆叠式太阳能电池组件中，太阳能电池堆以带状方式进行图案化，互连通过手段 将堆叠的太阳能电池的p型侧连接到相邻叠层的太阳能电池的n型侧的梳状电极结构。 可以以整体形式生产的太阳能模块在堆叠内并联并联在堆叠之间。 通过简单地重复制造步骤，可以以这种方式从两个或多个太阳能电池构建堆叠，与已知的太阳能模块相比，其具有降低的光老化。