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47 条记录 (耗时 0.028 秒)

    Image sensing apparatus, control method, and user interface display apparatus
    1.
    发明授权
    Image sensing apparatus, control method, and user interface display apparatus 有权

    公开(公告)号：US08781314B2

    公开(公告)日：2014-07-15

    申请号：US12644884

    申请日：2009-12-22

    申请人： Takeshi Sakaguchi

    发明人： Takeshi Sakaguchi

    IPC分类号： G03B13/22 ,  G03B13/30

    CPC分类号： G03B13/34 ,  G03B3/00

    摘要： An image sensing apparatus on which a plurality of lens units are interchangeably mountable includes a system controller configured to acquired information specific to a mounted lens unit from the mounted lens unit, a detection unit configured to detect a focus shift amount of the mounted lens unit, a display circuit configured to display the specific information acquired by the system controller in association with a focus correction value for correcting the focus shift amount detected by the detection unit, an operation switch configured to be operated by a user, and a setting unit that sets the focus correction value according to an operation on the operation switch.

    Focusing-state detection apparatus, imaging apparatus, and its control method
    2.
    发明授权
    Focusing-state detection apparatus, imaging apparatus, and its control method 有权
    聚焦状态检测装置，成像装置及其控制方法

    公开(公告)号：US08644698B2

    公开(公告)日：2014-02-04

    申请号：US12869537

    申请日：2010-08-26

    申请人： Hiroshi Arita ,  Takeshi Sakaguchi

    发明人： Hiroshi Arita ,  Takeshi Sakaguchi

    IPC分类号： G03B13/34

    CPC分类号： G03B13/34

    摘要： In an apparatus having a vertical focusing-state detection area and a lateral focusing-state detection area in a cross focusing point, wherein either one of the focusing-state detection areas has a calculation range that is overlapping with the adjacent focusing point, a photographing result desired by a photographer can be obtained without bringing into focus a subject in the focusing point adjacent to the cross focusing point selected by the photographer.

    摘要翻译： 在具有在交叉聚焦点中的垂直聚焦状态检测区域和横向聚焦状态检测区域的设备中，其中聚焦状态检测区域中的任一个具有与相邻聚焦点重叠的计算范围， 可以获得由摄影者所期望的结果，而不会使与摄影者选择的交叉聚焦点相邻的聚焦点的被摄体聚焦。

    RESISTANCE CHANGE MEMORY
    3.
    发明申请
    RESISTANCE CHANGE MEMORY 失效
    电阻变化记忆

    公开(公告)号：US20110286261A1

    公开(公告)日：2011-11-24

    申请号：US13021944

    申请日：2011-02-07

    申请人： Takeshi Sakaguchi ,  Hiroyuki Nitta

    发明人： Takeshi Sakaguchi ,  Hiroyuki Nitta

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0004 ,  G11C13/0069 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/1675

    摘要： According to one embodiment, a resistance change memory includes a memory cell array area and a resistive element area on a substrate. A first memory cell array in the memory cell array area includes a first control line, a second control line above first control line, and a first cell unit between the first and second control lines. A second memory cell array on the first memory cell array includes the second control line, a third control line above the second control line, and a second cell unit between the second and the third control lines. And a resistive element in the resistive element area includes resistance lines, and a resistor connected to the resistance lines. The resistor includes the same member as one of a member of the cell unit and a member of a contact plug.

    摘要翻译： 根据一个实施例，电阻变化存储器包括衬底上的存储单元阵列区域和电阻元件区域。 存储单元阵列区域中的第一存储单元阵列包括第一控制线，第一控制线之上的第二控制线和第一和第二控制线之间的第一单元单元。 第一存储单元阵列上的第二存储单元阵列包括第二控制线，第二控制线之上的第三控制线和第二和第三控制线之间的第二单元单元。 并且电阻元件区域中的电阻元件包括电阻线和连接到电阻线的电阻器。 电阻器包括与电池单元的构件中的一个和接触插塞的构件相同的构件。

    Semiconductor storage device
    4.
    发明授权
    Semiconductor storage device 失效
    半导体存储设备

    公开(公告)号：US07910973B2

    公开(公告)日：2011-03-22

    申请号：US12404804

    申请日：2009-03-16

    申请人： Takeshi Sakaguchi ,  Hiroyuki Nitsuta

    发明人： Takeshi Sakaguchi ,  Hiroyuki Nitsuta

    IPC分类号： H01L27/108 ,  H01L29/94

    CPC分类号： H01L27/11578 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11575 ,  H01L27/11582 ,  H01L28/20

    摘要： A non-volatile semiconductor storage device has: a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series; and a capacitor element area including capacitor elements. Each of the memory strings includes: a plurality of first conductive layers laminated on a substrate; and a plurality of first interlayer insulation layers formed between the plurality of first conductive layers. The capacitor element area includes: a plurality of second conductive layers laminated on a substrate and formed in the same layer as the first conductive layers; and a plurality of second interlayer insulation layers formed between the plurality of second conductive layers and formed in the same layer as the first interlayer insulation layers. A group of the adjacently-laminated second conductive layers is connected to a first potential, while another group thereof is connected to a second potential.

    摘要翻译： 一种非易失性半导体存储装置具有：具有串联连接的多个电可重写存储单元的多个存储器串; 以及包括电容器元件的电容器元件区域。 每个存储器串包括：层叠在基板上的多个第一导电层; 以及形成在所述多个第一导电层之间的多个第一层间绝缘层。 电容器元件区域包括：多个第二导电层，层叠在基板上并形成在与第一导电层相同的层中; 以及形成在所述多个第二导电层之间并形成在与所述第一层间绝缘层相同的层中的多个第二层间绝缘层。 一组相邻层叠的第二导电层连接到第一电位，而另一组连接到第二电位。

    Information recording medium and method for manufacturing the same
    5.
    发明授权
    Information recording medium and method for manufacturing the same 失效
    信息记录介质及其制造方法

    公开(公告)号：US07449225B2

    公开(公告)日：2008-11-11

    申请号：US10527354

    申请日：2003-09-12

    申请人： Takashi Nishihara ,  Rie Kojima ,  Noboru Yamada ,  Takeshi Sakaguchi

    发明人： Takashi Nishihara ,  Rie Kojima ,  Noboru Yamada ,  Takeshi Sakaguchi

    IPC分类号： B32B3/02

    CPC分类号： G11B7/24038 ,  G11B7/243 ,  G11B7/256 ,  G11B7/257 ,  G11B7/258 ,  G11B7/259 ,  G11B7/268 ,  G11B2007/24314 ,  G11B2007/24316

    摘要： An information recording medium of the present invention includes a substrate and an information layer arranged on the substrate. The information layer includes a recording layer that is changed in phase reversibly between a crystalline phase and an amorphous phase by at least one of optical means and electrical means, and at least one crystalline nucleation layer that contains at least one element selected from Bi and Te and at least one element (M1) selected from Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu and is provided in contact with the recording layer.

    摘要翻译： 本发明的信息记录介质包括基板和布置在基板上的信息层。 信息层包括通过光学装置和电气装置中的至少一个可逆地在晶相和非晶相之间相位地改变的记录层，以及至少一个包含选自Bi和Te中的至少一种元素的晶核成核层 和选自Sc，Y，La，Ce，Pr，Nd，Sm，Gd，Tb，Dy，Ho，Er，Yb和Lu中的至少一种元素（M1），并与记录层接触。

    Magneto-optical recording medium and reproducing method thereof
    8.
    发明申请
    Magneto-optical recording medium and reproducing method thereof 失效
    磁光记录介质及其再现方法

    公开(公告)号：US20050002318A1

    公开(公告)日：2005-01-06

    申请号：US10902328

    申请日：2004-07-29

    申请人： Motoyoshi Murakami ,  Takeshi Sakaguchi ,  Yasumori Hino

    发明人： Motoyoshi Murakami ,  Takeshi Sakaguchi ,  Yasumori Hino

    IPC分类号： G11B3/00 ,  G11B11/00 ,  G11B11/105

    CPC分类号： G11B11/10578 ,  G11B11/10515 ,  G11B11/10582 ,  G11B11/10584 ,  G11B11/10586

    摘要： A magneto-optical recording medium, including a recording layer, a transfer control layer magnetically coupled to the recording layer, and a reproduction layer. The recording layer includes a recording magnetic domain in which information is recorded by a magnetization direction vertical to the surface of the film. The reproduction layer includes a reproduction magnetic domain in which information in the recording layer is transferred and formed as a magnetization direction by magnetic coupling. The direction of magnetization of the recording magnetic domain of the recording layer and the direction of magnetization of the transfer control layer corresponding to the recording magnetic domain are in opposite directions in at least part of the range of temperatures less than a transfer temperature where the reproduction magnetic domain is transferred to the reproduction layer. The Curie point temperature of the transfer control layer is higher than this transfer temperature.

    摘要翻译： 包括记录层，磁耦合到记录层的转移控制层和再现层的磁光记录介质。 记录层包括通过垂直于胶片表面的磁化方向记录信息的记录磁畴。 再现层包括其中记录层中的信息通过磁耦合传送并形成为磁化方向的再现磁畴。 记录层的记录磁畴的磁化方向和对应于记录磁畴的转印控制层的磁化方向在至少部分小于转印温度的范围内的方向上是相反的，其中再生 磁畴被传送到再现层。 转移控制层的居里点温度高于此转印温度。

    Imaging apparatus
    9.
    发明授权
    Imaging apparatus 有权
    成像设备

    公开(公告)号：US09341922B2

    公开(公告)日：2016-05-17

    申请号：US13463449

    申请日：2012-05-03

    申请人： Keisuke Aoyama ,  Takeshi Sakaguchi

    发明人： Keisuke Aoyama ,  Takeshi Sakaguchi

    IPC分类号： G03B3/10 ,  G03B13/36 ,  H04N5/232

    CPC分类号： G03B13/36 ,  H04N5/23212

    摘要： A control apparatus controls an imaging apparatus that includes a focus detection unit configured to detect a focus state of an image forming optical system. The control apparatus includes a collectively setting unit configured to read initial setting values corresponding to a selected operation mode from a storage unit, and set setting values of a plurality of setting items to initial setting values, and a setting value changing unit configured to individually change setting values of the setting items set by the collectively setting unit and store the changed setting values in the storage unit. An operation of the focus detection unit is controlled by the operation mode in which the setting values have been changed by the setting value changing unit.

    摘要翻译： 控制装置控制成像装置，其包括被配置为检测图像形成光学系统的聚焦状态的焦点检测单元。 控制装置包括：集体设定单元，被配置为从存储单元读取与所选择的操作模式对应的初始设定值，并将多个设定项目的设定值设定为初始设定值;以及设定值变更单元， 设定由集体设定单元设定的设定项目的值，并将改变的设定值存储在存储单元中。 焦点检测单元的操作由设定值改变单元改变了设定值的操作模式进行控制。