公开(公告)号：US20090230449A1

公开(公告)日：2009-09-17

申请号：US12404804

申请日：2009-03-16

申请人： Takeshi SAKAGUCHI ,  Hiroyuki Nitsuta

发明人： Takeshi SAKAGUCHI ,  Hiroyuki Nitsuta

IPC分类号： H01L29/792 ,  H01L27/105

CPC分类号： H01L27/11578 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11575 ,  H01L27/11582 ,  H01L28/20

摘要： A non-volatile semiconductor storage device has: a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series; and a capacitor element area including capacitor elements. Each of the memory strings includes: a plurality of first conductive layers laminated on a substrate; and a plurality of first interlayer insulation layers formed between the plurality of first conductive layers. The capacitor element area includes: a plurality of second conductive layers laminated on a substrate and formed in the same layer as the first conductive layers; and a plurality of second interlayer insulation layers formed between the plurality of second conductive layers and formed in the same layer as the first interlayer insulation layers. A group of the adjacently-laminated second conductive layers is connected to a first potential, while another group thereof is connected to a second potential.

摘要翻译： 一种非易失性半导体存储装置具有：具有串联连接的多个电可重写存储单元的多个存储器串; 以及包括电容器元件的电容器元件区域。 每个存储器串包括：层叠在基板上的多个第一导电层; 以及形成在所述多个第一导电层之间的多个第一层间绝缘层。 电容器元件区域包括：多个第二导电层，层叠在基板上并形成在与第一导电层相同的层中; 以及形成在所述多个第二导电层之间并形成在与所述第一层间绝缘层相同的层中的多个第二层间绝缘层。 一组相邻层叠的第二导电层连接到第一电位，而另一组连接到第二电位。

公开(公告)号：US07910973B2

公开(公告)日：2011-03-22

申请号：US12404804

申请日：2009-03-16

申请人： Takeshi Sakaguchi ,  Hiroyuki Nitsuta

发明人： Takeshi Sakaguchi ,  Hiroyuki Nitsuta

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L27/11578 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11575 ,  H01L27/11582 ,  H01L28/20

摘要： A non-volatile semiconductor storage device has: a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series; and a capacitor element area including capacitor elements. Each of the memory strings includes: a plurality of first conductive layers laminated on a substrate; and a plurality of first interlayer insulation layers formed between the plurality of first conductive layers. The capacitor element area includes: a plurality of second conductive layers laminated on a substrate and formed in the same layer as the first conductive layers; and a plurality of second interlayer insulation layers formed between the plurality of second conductive layers and formed in the same layer as the first interlayer insulation layers. A group of the adjacently-laminated second conductive layers is connected to a first potential, while another group thereof is connected to a second potential.

摘要翻译： 一种非易失性半导体存储装置具有：具有串联连接的多个电可重写存储单元的多个存储器串; 以及包括电容器元件的电容器元件区域。 每个存储器串包括：层叠在基板上的多个第一导电层; 以及形成在所述多个第一导电层之间的多个第一层间绝缘层。 电容器元件区域包括：多个第二导电层，层叠在基板上并形成在与第一导电层相同的层中; 以及形成在所述多个第二导电层之间并形成在与所述第一层间绝缘层相同的层中的多个第二层间绝缘层。 一组相邻层叠的第二导电层连接到第一电位，而另一组连接到第二电位。