公开(公告)号：US20110240855A1

公开(公告)日：2011-10-06

申请号：US13133947

申请日：2009-12-04

申请人： Takashi Ohshima ,  Satoshi Tomimatsu

发明人： Takashi Ohshima ,  Satoshi Tomimatsu

IPC分类号： H01J9/02 ,  H01J19/02 ,  H01J37/073

CPC分类号： H01J37/28 ,  H01J37/065 ,  H01J37/075 ,  H01J37/256 ,  H01J2237/06316

摘要： To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.

摘要翻译： 为了获得能够在低加速电压下提供高分辨率并允许高速元素分布测量的SEM，包括Zr-O作为扩散源的SE电子源被成形为使得尖端的曲率半径r大于 0.5μm以上且小于1μm，顶端附近的3r〜8r的尖部附近的圆锥部的锥角α大于5°且小于（8 / r） °。 另一个SE电子源使用Ba-O，并且包括由烧结金属和含有氧化钡的钡扩散源组成的钡扩散供给装置。

公开(公告)号：US08115184B2

公开(公告)日：2012-02-14

申请号：US12318583

申请日：2008-12-31

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

IPC分类号： H01J49/00

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

公开(公告)号：US08530865B2

公开(公告)日：2013-09-10

申请号：US13355104

申请日：2012-01-20

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

IPC分类号： H01J49/26 ,  H01J49/00 ,  H01J37/08

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

公开(公告)号：US08450699B2

公开(公告)日：2013-05-28

申请号：US13133947

申请日：2009-12-04

申请人： Takashi Ohshima ,  Satoshi Tomimatsu

发明人： Takashi Ohshima ,  Satoshi Tomimatsu

IPC分类号： G21K7/00 ,  B01J19/08 ,  H01J9/04

CPC分类号： H01J37/28 ,  H01J37/065 ,  H01J37/075 ,  H01J37/256 ,  H01J2237/06316

摘要： To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.

摘要翻译： 为了获得能够在低加速电压下提供高分辨率并允许高速元素分布测量的SEM，包括Zr-O作为扩散源的SE电子源被成形为使得尖端的曲率半径r大于 0.5μm以上且小于1μm，并且尖端附近尖端的距离尖端3r至8r的部分的锥形角α大于5°且小于（8 / r） °。 另一个SE电子源使用Ba-O，并且包括由烧结金属和含有氧化钡的钡扩散源组成的钡扩散供给装置。

公开(公告)号：US20120119086A1

公开(公告)日：2012-05-17

申请号：US13355104

申请日：2012-01-20

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

IPC分类号： H01J37/26

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

公开(公告)号：US08912487B2

公开(公告)日：2014-12-16

申请号：US13503074

申请日：2010-10-06

申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

IPC分类号： H01J37/304 ,  H01J37/305 ,  G01N23/22 ,  H01J37/302

CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行

公开(公告)号：US20140076717A1

公开(公告)日：2014-03-20

申请号：US14119807

申请日：2012-05-16

申请人： Terutaka Nanri ,  Satoshi Tomimatsu

发明人： Terutaka Nanri ,  Satoshi Tomimatsu

IPC分类号： H01J37/304 ,  H01J37/305

CPC分类号： H01J37/3056 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J2237/31713 ,  H01J2237/31745

摘要： Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

摘要翻译： 提供了一种执行FIB铣削的技术，尽管其样品依赖性有效地成为期望的形状，而不影响操作者之间的个体差异。 带电粒子束装置包括：离子束光学系统装置，被配置为用在离子源处产生的离子束照射样品; 其控制器; 元件检测器，被配置为检测构成样品的元件; 其控制器; 以及中央处理器，其被配置为基于由所述元件检测器指定的元素来自动设置所述样本的条件。

公开(公告)号：US20130334034A1

公开(公告)日：2013-12-19

申请号：US14002137

申请日：2012-01-13

申请人： Shinya Kitayama ,  Satoshi Tomimatsu ,  Tsuyoshi Onishi

发明人： Shinya Kitayama ,  Satoshi Tomimatsu ,  Tsuyoshi Onishi

IPC分类号： H01J37/317

CPC分类号： H01J37/317 ,  H01J37/20 ,  H01J37/222 ,  H01J2237/30466 ,  H01J2237/31745 ,  H01J2237/31749

摘要： Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.

摘要翻译： 提供了能够加工诸如样品，探针或样品台之类的加工对象的装置和方法，而不需要高度的装置操作技能。 首先，执行基于加工对象的离子束扫描信号和吸收电流来确定加工对象的形状的形状生成处理。 接下来，执行将加工图案定位在加工对象的图像上的加工图案定位处理。 此外，从加工对象的图像与加工图案的比较的结果，通过离子束照射加工加工对象，进行停止离子束照射的离子束停止处理。

公开(公告)号：US20130105302A1

公开(公告)日：2013-05-02

申请号：US13808261

申请日：2011-07-05

申请人： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

发明人： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

IPC分类号： C23F4/02

CPC分类号： C23F4/02 ,  G01N1/32 ,  G01N23/225 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3056 ,  H01J2237/31745

摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

摘要翻译： 提供了一种能够通过FIB制造而产生的样品片的损伤层除去至少最小的技术。 带电粒子束装置包括：第一元件离子束光学系统单元，其执行第一FIB制造以从样品形成样品片;第二元件离子束光学系统单元，其执行第二FIB制造， 去除形成在样品表面上的损伤层，以及检测存在于损伤层中的第一元素的第一元件检测器（140）。 如果损伤层中存在的第一元素的量变得小于预定阈值，则确定第二FIB制造的终止。

公开(公告)号：US08431891B2

公开(公告)日：2013-04-30

申请号：US12731910

申请日：2010-03-25

申请人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

发明人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

摘要： An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

摘要翻译： 一种离子束处理装置，包括：将矩形离子束照射到保持在第一样品台上的样品的离子束照射光学系统，向样品照射电子束的电子束照射光学系统;以及第二样品台， 通过探针从样品中提取的试片被安装。 离子束的照射角度可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。