公开(公告)号：US20170221765A1

公开(公告)日：2017-08-03

申请号：US15485270

申请日：2017-04-12

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Kuo-Cheng CHING ,  Guan-Lin CHEN

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823431 ,  H01L21/823468 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66818 ,  H01L29/7843 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane. A dielectric is disposed within the first furrow, such that the dielectric is in contact with the first furrow between a first end of the dielectric and a second end of the dielectric. The first end is separated a first distance from the first plane. The dielectric disposed within the furrow increases the isolation of a channel portion of adjacent fins, and thus decreases current leakage of a FinFet, as compared to a FinFet including fins that do not include a dielectric disposed within a furrow.

公开(公告)号：US20210407993A1

公开(公告)日：2021-12-30

申请号：US16910488

申请日：2020-06-24

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Shi Ning JU ,  Kuo-Cheng CHIANG ,  Chih-Hao WANG ,  Kuan-Lun CHENG ,  Guan-Lin CHEN

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/06

Abstract: A first gate-all-around (GAA) transistor and a second GAA transistor may be formed on a substrate. The first GAA transistor includes at least one silicon plate, a first gate structure, a first source region, and a first drain region. The second GAA transistor includes at least one silicon-germanium plate, a second gate structure, a second source region, and a second drain region. The first GAA transistor may be an n-type field effect transistor, and the second GAA transistor may be a p-type field effect transistor. The gate electrodes of the first gate structure and the second gate structure may include a same conductive material. Each silicon plate and each silicon-germanium plate may be single crystalline and may have a same crystallographic orientation for each Miller index.

公开(公告)号：US20250098293A1

公开(公告)日：2025-03-20

申请号：US18971477

申请日：2024-12-06

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Shi Ning JU ,  Kuo-Cheng CHIANG ,  Chih-Hao WANG ,  Kuan-Lun CHENG ,  Guan-Lin CHEN

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/16 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A first gate-all-around (GAA) transistor and a second GAA transistor may be formed on a substrate. The first GAA transistor includes at least one silicon plate, a first gate structure, a first source region, and a first drain region. The second GAA transistor includes at least one silicon-germanium plate, a second gate structure, a second source region, and a second drain region. The first GAA transistor may be an n-type field effect transistor, and the second GAA transistor may be a p-type field effect transistor. The gate electrodes of the first gate structure and the second gate structure may include a same conductive material. Each silicon plate and each silicon-germanium plate may be single crystalline and may have a same crystallographic orientation for each Miller index.

公开(公告)号：US20230369326A1

公开(公告)日：2023-11-16

申请号：US18360889

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Shi Ning JU ,  Kuo-Cheng CHIANG ,  Chih-Hao WANG ,  Kuan-Lun CHENG ,  Guan-Lin CHEN

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L29/41791 ,  H01L29/785 ,  H01L29/16 ,  H01L29/0665 ,  H01L29/0653 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A first gate-all-around (GAA) transistor and a second GAA transistor may be formed on a substrate. The first GAA transistor includes at least one silicon plate, a first gate structure, a first source region, and a first drain region. The second GAA transistor includes at least one silicon-germanium plate, a second gate structure, a second source region, and a second drain region. The first GAA transistor may be an n-type field effect transistor, and the second GAA transistor may be a p-type field effect transistor. The gate electrodes of the first gate structure and the second gate structure may include a same conductive material. Each silicon plate and each silicon-germanium plate may be single crystalline and may have a same crystallographic orientation for each Miller index.

公开(公告)号：US20220231017A1

公开(公告)日：2022-07-21

申请号：US17712255

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Shi Ning JU ,  Kuo-Cheng CHIANG ,  Chih-Hao WANG ,  Kuan-Lun CHENG ,  Guan-Lin CHEN

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66

Abstract: A first gate-all-around (GAA) transistor and a second GAA transistor may be formed on a substrate. The first GAA transistor includes at least one silicon plate, a first gate structure, a first source region, and a first drain region. The second GAA transistor includes at least one silicon-germanium plate, a second gate structure, a second source region, and a second drain region. The first GAA transistor may be an n-type field effect transistor, and the second GAA transistor may be a p-type field effect transistor. The gate electrodes of the first gate structure and the second gate structure may include a same conductive material. Each silicon plate and each silicon-germanium plate may be single crystalline and may have a same crystallographic orientation for each Miller index.