公开(公告)号：US20200185304A1

公开(公告)日：2020-06-11

申请号：US16375228

申请日：2019-04-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yuan Sheng Chiu ,  Chih-Kai Cheng ,  Tsung-Shu Lin

IPC分类号： H01L23/40 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L23/528 ,  H01L23/522

摘要： In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

公开(公告)号：US11011451B2

公开(公告)日：2021-05-18

申请号：US16375228

申请日：2019-04-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yuan Sheng Chiu ,  Chih-Kai Cheng ,  Tsung-Shu Lin

IPC分类号： H01L23/40 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L23/522 ,  H01L23/528 ,  H01L21/48

摘要： In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

公开(公告)号：US11923310B2

公开(公告)日：2024-03-05

申请号：US17397017

申请日：2021-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Kai Cheng ,  Tsung-Shu Lin ,  Tsung-Yu Chen ,  Hsien-Pin Hu ,  Wen-Hsin Wei

IPC分类号： H01L23/48 ,  H01L21/48 ,  H01L23/00 ,  H01L23/49 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L23/5384 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/19 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/24225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/92125 ,  H01L2224/92244 ,  H01L2225/1035 ,  H01L2225/1058

摘要： A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

公开(公告)号：US20240363486A1

公开(公告)日：2024-10-31

申请号：US18771548

申请日：2024-07-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yuan Sheng Chiu ,  Chih-Kai Cheng ,  Tsung-Shu Lin

IPC分类号： H01L23/40 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/4006 ,  H01L21/4882 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/09 ,  H01L24/17 ,  H01L24/94 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/26155 ,  H01L2224/83897

摘要： In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

公开(公告)号：US12080623B2

公开(公告)日：2024-09-03

申请号：US17322191

申请日：2021-05-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yuan Sheng Chiu ,  Chih-Kai Cheng ,  Tsung-Shu Lin

IPC分类号： H01L23/40 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/4006 ,  H01L21/4882 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/09 ,  H01L24/17 ,  H01L24/94 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/26155 ,  H01L2224/83897

摘要： In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

公开(公告)号：US20210272875A1

公开(公告)日：2021-09-02

申请号：US17322191

申请日：2021-05-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yuan Sheng Chiu ,  Chih-Kai Cheng ,  Tsung-Shu Lin

IPC分类号： H01L23/40 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L23/522 ,  H01L23/528 ,  H01L21/48

摘要： In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

公开(公告)号：US09711478B2

公开(公告)日：2017-07-18

申请号：US14886521

申请日：2015-10-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chih-Kai Cheng ,  Cheng-Chieh Hsieh ,  Shih-Wen Huang

IPC分类号： H01L23/498 ,  H01L23/48 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L24/32 ,  H01L21/76816 ,  H01L21/7685 ,  H01L21/76898 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L2224/02166 ,  H01L2224/0221 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05559 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/08054 ,  H01L2224/08059 ,  H01L2224/32113 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/35121 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device with an anti-pad peeling structure is disclosed. The semiconductor device includes: a semiconductor substrate including a Through Substrate Via (TSV); a dielectric layer on the semiconductor substrate and including a plurality of recesses therein; and a pad above the semiconductor substrate to cover a portion of the dielectric layer and extend to the recesses; wherein the pad extends to the plurality of recesses, and a plurality of contact points are confined in the recesses between the pad and the conductive layer, and each of the contact points is at least partially excluded from a boundary of the TSV when being seen from a top-down perspective.