公开(公告)号：US20220216307A1

公开(公告)日：2022-07-07

申请号：US17656738

申请日：2022-03-28

申请人： Taiwan Semiconductor Manufacturing Co, Ltd.

发明人： Hsin-Yi Lee ,  Ya-Huei Li ,  Da-Yuan Lee ,  Ching-Hwanq Su

IPC分类号： H01L29/40 ,  H01L27/088 ,  H01L21/3215 ,  H01L21/8234 ,  H01L21/285 ,  H01L29/49

摘要： A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.

公开(公告)号：US20230335601A1

公开(公告)日：2023-10-19

申请号：US18341486

申请日：2023-06-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yi Lee ,  Ya-Huei Li ,  Da-Yuan Lee ,  Ching-Hwanq Su

IPC分类号： H01L29/40 ,  H01L27/088 ,  H01L21/3215 ,  H01L21/8234 ,  H01L21/285 ,  H01L29/49

CPC分类号： H01L29/401 ,  H01L27/0886 ,  H01L21/3215 ,  H01L21/823437 ,  H01L21/28568 ,  H01L29/4966

摘要： A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.

公开(公告)号：US11222818B2

公开(公告)日：2022-01-11

申请号：US16034843

申请日：2018-07-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Hsiang Chao ,  Min-Hsiu Hung ,  Chun-Wen Nieh ,  Ya-Huei Li ,  Yu-Hsiang Liao ,  Li-Wei Chu ,  Kan-Ju Lin ,  Kuan-Yu Yeh ,  Chi-Hung Chuang ,  Chih-Wei Chang ,  Ching-Hwanq Su ,  Hung-Yi Huang ,  Ming-Hsing Tsai

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/45 ,  H01L21/324 ,  H01L29/66 ,  H01L21/285 ,  H01L21/265 ,  H01L23/535

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.

公开(公告)号：US11742395B2

公开(公告)日：2023-08-29

申请号：US17656738

申请日：2022-03-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yi Lee ,  Ya-Huei Li ,  Da-Yuan Lee ,  Ching-Hwanq Su

IPC分类号： H01L29/40 ,  H01L27/088 ,  H01L21/3215 ,  H01L21/8234 ,  H01L21/285 ,  H01L29/49

CPC分类号： H01L29/401 ,  H01L21/28568 ,  H01L21/3215 ,  H01L21/823437 ,  H01L27/0886 ,  H01L29/4966

摘要： A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.