公开(公告)号：US11222818B2

公开(公告)日：2022-01-11

申请号：US16034843

申请日：2018-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsiang Chao ,  Min-Hsiu Hung ,  Chun-Wen Nieh ,  Ya-Huei Li ,  Yu-Hsiang Liao ,  Li-Wei Chu ,  Kan-Ju Lin ,  Kuan-Yu Yeh ,  Chi-Hung Chuang ,  Chih-Wei Chang ,  Ching-Hwanq Su ,  Hung-Yi Huang ,  Ming-Hsing Tsai

IPC: H01L23/00 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/45 ,  H01L21/324 ,  H01L29/66 ,  H01L21/285 ,  H01L21/265 ,  H01L23/535

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.