- 专利标题： Selective Etching to Increase Threshold Voltage Spread
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申请号： US17656738申请日： 2022-03-28
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公开(公告)号： US20220216307A1公开(公告)日： 2022-07-07
- 发明人: Hsin-Yi Lee , Ya-Huei Li , Da-Yuan Lee , Ching-Hwanq Su
- 申请人： Taiwan Semiconductor Manufacturing Co, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L27/088 ; H01L21/3215 ; H01L21/8234 ; H01L21/285 ; H01L29/49
摘要：
A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.
公开/授权文献
- US11742395B2 Selective etching to increase threshold voltage spread 公开/授权日：2023-08-29
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