Capacitor structure with low capacitance

    公开(公告)号:US11670672B2

    公开(公告)日:2023-06-06

    申请号:US17306796

    申请日:2021-05-03

    CPC classification number: H01L28/60 H01L23/5223

    Abstract: Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal finger is formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger and the second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.

    CAPACITOR STRUCTURE WITH LOW CAPACITANCE
    4.
    发明申请

    公开(公告)号:US20200227516A1

    公开(公告)日:2020-07-16

    申请号:US16834265

    申请日:2020-03-30

    Abstract: Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal finger is formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger and the second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.

    Capacitor structure with low capacitance

    公开(公告)号:US10998397B2

    公开(公告)日:2021-05-04

    申请号:US16834265

    申请日:2020-03-30

    Abstract: Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal finger is formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger and the second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.

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