Invention Grant
- Patent Title: Capacitor structure with low capacitance
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Application No.: US16834265Application Date: 2020-03-30
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Publication No.: US10998397B2Publication Date: 2021-05-04
- Inventor: Tai-Yi Chen , Chung-Chieh Yang , Yung-Chow Peng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Duane Morris LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522

Abstract:
Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal finger is formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger and the second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.
Public/Granted literature
- US20200227516A1 CAPACITOR STRUCTURE WITH LOW CAPACITANCE Public/Granted day:2020-07-16
Information query
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