公开(公告)号：US11723152B2

公开(公告)日：2023-08-08

申请号：US16937004

申请日：2020-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shen-Min Yang ,  Pu Kuan Fang ,  Jyh-Shiou Hsu ,  Mu-Tsang Lin

IPC: H05K3/00

CPC classification number: H05K3/0055 ,  H05K2203/085 ,  H05K2203/1178

Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.

公开(公告)号：US11342458B2

公开(公告)日：2022-05-24

申请号：US17080084

申请日：2020-10-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Cheng Chang ,  Tung-Wen Cheng ,  Chang-Yin Chen ,  Mu-Tsang Lin

IPC: H01L21/02 ,  H01L29/78 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/423 ,  H01L29/08 ,  H01L29/49 ,  H01L29/165 ,  H01L29/66 ,  H01L29/51

Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.

公开(公告)号：US09991385B2

公开(公告)日：2018-06-05

申请号：US14854772

申请日：2015-09-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Wen Cheng ,  Che-Cheng Chang ,  Mu-Tsang Lin ,  Bo-Feng Young ,  Cheng-Yen Yu

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

Abstract: The present disclosure relates to a semiconductor device that controls a strain on a channel region by forming a dielectric material in recesses, adjacent to a channel region, in order to provide control over a volume and shape of a strain inducing material of epitaxial source/drain regions formed within the recesses. In some embodiments, the semiconductor device has epitaxial source/drain regions arranged in recesses within an upper surface of a semiconductor body on opposing sides of a channel region. A gate structure is arranged over the channel region, and a dielectric material is arranged laterally between the epitaxial source/drain regions and the channel region. The dielectric material consumes some volume of the recesses, thereby reducing a volume of strain inducing material in epitaxial source/drain regions formed in the recesses.

公开(公告)号：US20170288032A1

公开(公告)日：2017-10-05

申请号：US15086072

申请日：2016-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Wang Lu ,  Kuo Hui Chang ,  Mu-Tsang Lin

IPC: H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/3205 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L21/28114 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/823456 ,  H01L29/42376 ,  H01L29/6653 ,  H01L29/66545

Abstract: Provided is a semiconductor device including a gate electrode, source and drain regions, and a spacer. The gate electrode is located over a substrate, and an angle of a base corner of the gate electrode is greater than 90 degrees. The source and drain regions are located in the substrate at sides of the gate electrode. The spacer is located at a sidewall of the gate electrode.

公开(公告)号：US12193164B2

公开(公告)日：2025-01-07

申请号：US18338679

申请日：2023-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shen-Min Yang ,  Pu Kuan Fang ,  Jyh-Shiou Hsu ,  Mu-Tsang Lin

IPC: H05K3/00 ,  H01L21/673

Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.

公开(公告)号：US10770569B2

公开(公告)日：2020-09-08

申请号：US16436753

申请日：2019-06-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Yang Lo ,  Shih-Hao Chen ,  Mu-Tsang Lin ,  Tung-Wen Cheng

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/306 ,  H01L29/08

Abstract: A transistor includes a semiconductive fin having a channel portion, a gate stack over the channel portion of the semiconductive fin, source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, and a sidewall structure extending along sidewalls of a body portion of the source structure. The source structure has a curved top, and the source structure has a top portion protruding over a top of the sidewall structure.

公开(公告)号：US09882013B2

公开(公告)日：2018-01-30

申请号：US15086072

申请日：2016-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Wang Lu ,  Kuo Hui Chang ,  Mu-Tsang Lin

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L21/311 ,  H01L29/78 ,  H01L21/3205 ,  H01L29/49 ,  H01L21/8234

CPC classification number: H01L21/28114 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/823456 ,  H01L29/42376 ,  H01L29/6653 ,  H01L29/66545

Abstract: Provided is a semiconductor device including a gate electrode, source and drain regions, and a spacer. The gate electrode is located over a substrate, and an angle of a base corner of the gate electrode is greater than 90 degrees. The source and drain regions are located in the substrate at sides of the gate electrode. The spacer is located at a sidewall of the gate electrode.

公开(公告)号：US11594534B2

公开(公告)日：2023-02-28

申请号：US17313590

申请日：2021-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Wen Cheng ,  Chih-Shan Chen ,  Mu-Tsang Lin

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L23/528 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.

公开(公告)号：US11018259B2

公开(公告)日：2021-05-25

申请号：US15161139

申请日：2016-05-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Yang Lo ,  Tung-Wen Cheng ,  Chia-Ling Chan ,  Mu-Tsang Lin

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/223

Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.

公开(公告)号：US10355135B2

公开(公告)日：2019-07-16

申请号：US15788803

申请日：2017-10-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Che-Cheng Chang ,  Tung-Wen Cheng ,  Chang-Yin Chen ,  Mu-Tsang Lin

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L29/08 ,  H01L29/165 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/3213

Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.