公开(公告)号：US11022885B2

公开(公告)日：2021-06-01

申请号：US16119880

申请日：2018-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chih Ho ,  Kuan-Hsin Lo ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.

公开(公告)号：US10056265B2

公开(公告)日：2018-08-21

申请号：US15197467

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Kuan-Hsin Lo ,  Wei-Liang Lin ,  Chi-Cheng Hung

IPC: H01L21/31 ,  H01L21/30 ,  H01L21/46 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/033 ,  H01L21/027

CPC classification number: H01L21/3065 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/31144

Abstract: A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method further includes removing the mandrel patterns, thereby forming trenches that are at least partially surrounded by the spacers. The method further includes depositing a copolymer material in the trenches, wherein the copolymer material is directed self-assembling; and inducing microphase separation within the copolymer material, thereby defining a first constituent polymer surrounded by a second constituent polymer. The mandrel patterns have restricted sizes and a restricted configuration. The first constituent polymer includes cylinders arranged in a rectangular or square array.

公开(公告)号：US10768527B2

公开(公告)日：2020-09-08

申请号：US16102429

申请日：2018-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chung Su ,  Kuan-Hsin Lo ,  Yahru Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/16 ,  G03F7/20 ,  G03F7/09 ,  H01L21/027

Abstract: A method includes providing a photoresist solution that includes a first solvent having a first volume and a second solvent having a second volume, where the first solvent is different from the second solvent and where the first volume is less than the second volume; dispersing the photoresist solution over a substrate to form a film, where the dispersing evaporates a portion of the first solvent and a portion of the second solvent such that a remaining portion of the first solvent is greater than a remaining portion of the second solvent; baking the film; after baking the film, exposing the film to form an exposed film; and developing the exposed film.

公开(公告)号：US20200050110A1

公开(公告)日：2020-02-13

申请号：US16102429

申请日：2018-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chung Su ,  Kuan-Hsin Lo ,  Yahru Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/16 ,  H01L21/027 ,  G03F7/09 ,  G03F7/20

Abstract: A method includes providing a photoresist solution that includes a first solvent having a first volume and a second solvent having a second volume, where the first solvent is different from the second solvent and where the first volume is less than the second volume; dispersing the photoresist solution over a substrate to form a film, where the dispersing evaporates a portion of the first solvent and a portion of the second solvent such that a remaining portion of the first solvent is greater than a remaining portion of the second solvent; baking the film; after baking the film, exposing the film to form an exposed film; and developing the exposed film.

公开(公告)号：US20200073243A1

公开(公告)日：2020-03-05

申请号：US16119880

申请日：2018-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chih Ho ,  Kuan-Hsin Lo ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/004 ,  G03F7/32

Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.

公开(公告)号：US10692725B2

公开(公告)日：2020-06-23

申请号：US16041892

申请日：2018-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Kuan-Hsin Lo ,  Wei-Liang Lin ,  Chi-Cheng Hung

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/033 ,  H01L21/027 ,  H01L21/311

Abstract: A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method further includes removing the mandrel patterns, thereby forming trenches that are at least partially surrounded by the spacers. The method further includes depositing a copolymer material in the trenches, wherein the copolymer material is directed self-assembling; and inducing microphase separation within the copolymer material, thereby defining a first constituent polymer surrounded by a second constituent polymer. The mandrel patterns have restricted sizes and a restricted configuration. The first constituent polymer includes cylinders arranged in a rectangular or square array.

公开(公告)号：US20180350613A1

公开(公告)日：2018-12-06

申请号：US16041892

申请日：2018-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Kuan-Hsin Lo ,  Wei-Liang Lin ,  Chi-Cheng Hung

IPC: H01L21/3065 ,  H01L21/306 ,  H01L21/033 ,  H01L21/027

Abstract: A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method further includes removing the mandrel patterns, thereby forming trenches that are at least partially surrounded by the spacers. The method further includes depositing a copolymer material in the trenches, wherein the copolymer material is directed self-assembling; and inducing microphase separation within the copolymer material, thereby defining a first constituent polymer surrounded by a second constituent polymer. The mandrel patterns have restricted sizes and a restricted configuration. The first constituent polymer includes cylinders arranged in a rectangular or square array.

公开(公告)号：US20170271164A1

公开(公告)日：2017-09-21

申请号：US15197467

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Kuan-Hsin Lo ,  Wei-Liang Lin ,  Chi-Cheng Hung

IPC: H01L21/3065 ,  H01L21/033 ,  H01L21/027 ,  H01L21/306

CPC classification number: H01L21/3065 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/31144

Abstract: A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method further includes removing the mandrel patterns, thereby forming trenches that are at least partially surrounded by the spacers. The method further includes depositing a copolymer material in the trenches, wherein the copolymer material is directed self-assembling; and inducing microphase separation within the copolymer material, thereby defining a first constituent polymer surrounded by a second constituent polymer. The mandrel patterns have restricted sizes and a restricted configuration. The first constituent polymer includes cylinders arranged in a rectangular or square array.

公开(公告)号：US09684236B1

公开(公告)日：2017-06-20

申请号：US15073073

申请日：2016-03-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ken-Hsien Hsieh ,  Kuan-Hsin Lo ,  Shih-Ming Chang ,  Wei-Liang Lin ,  Joy Cheng ,  Chun-Kuang Chen ,  Ching-Yu Chang ,  Kuei-Shun Chen ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/00 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3065

CPC classification number: G03F7/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a first patterned hard mask over a material layer. The first patterned hard mask defines an opening. The method also includes forming a direct-self-assembly (DSA) layer having a first portion and a second portion within the opening, removing the first portion of the DSA layer, forming spacers along sidewalls of the second portion of the DSA layer and removing the second portion of the DSA layer. The spacers form a second patterned hard mask over the material layer.