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公开(公告)号：US20200050109A1
公开(公告)日：2020-02-13
申请号：US16101760
申请日：2018-08-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Chih Ho , An-Ren Zi , Ching-Yu Chang
IPC: G03F7/16 , H01L21/687 , G03F7/004 , H01L21/027
Abstract: Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.
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Patent Agency Ranking
公开(公告)号：US11886121B2
公开(公告)日：2024-01-30
申请号：US16885077
申请日：2020-05-27
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chun-Chih Ho , Ching-Yu Chang , Chin-Hsiang Lin
IPC: G03F7/36 , H01L21/027
CPC classification number: G03F7/36 , H01L21/0274
Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.
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公开(公告)号：US20200073243A1
公开(公告)日：2020-03-05
申请号：US16119880
申请日：2018-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Chih Ho , Kuan-Hsin Lo , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.
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公开(公告)号：US11971659B2
公开(公告)日：2024-04-30
申请号：US16584234
申请日：2019-09-26
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chun-Chih Ho , Ching-Yu Chang , Chin-Hsiang Lin
CPC classification number: G03F7/0387 , G03F7/0125 , G03F7/0382 , G03F7/0388 , G03F7/168
Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.
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公开(公告)号：US11022885B2
公开(公告)日：2021-06-01
申请号：US16119880
申请日：2018-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Chih Ho , Kuan-Hsin Lo , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.
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公开(公告)号：US11942322B2
公开(公告)日：2024-03-26
申请号：US17226872
申请日：2021-04-09
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： An-Ren Zi , Chun-Chih Ho , Yahru Cheng , Ching-Yu Chang
IPC: H01L21/033 , G03F7/00 , G03F7/20 , H01L21/308
CPC classification number: H01L21/0334 , G03F7/70033 , H01L21/3083
Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.
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