公开(公告)号：US20240096999A1

公开(公告)日：2024-03-21

申请号：US18520326

申请日：2023-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Di Tzeng ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/45 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/401 ,  H01L29/41791 ,  H01L29/785

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

公开(公告)号：US11855169B2

公开(公告)日：2023-12-26

申请号：US17826673

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Di Tzeng ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/45 ,  H01L29/78 ,  H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40

CPC classification number: H01L29/45 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/401 ,  H01L29/41791 ,  H01L29/785

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

公开(公告)号：US12224330B2

公开(公告)日：2025-02-11

申请号：US18520326

申请日：2023-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Di Tzeng ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/45 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

公开(公告)号：US20240379805A1

公开(公告)日：2024-11-14

申请号：US18783201

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co,. Ltd.

Inventor： Kai-Di Tzeng ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/45 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

公开(公告)号：US20220293761A1

公开(公告)日：2022-09-15

申请号：US17826673

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Di Tzeng ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/45 ,  H01L29/78 ,  H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.