公开(公告)号：US20220328690A1

公开(公告)日：2022-10-13

申请号：US17849995

申请日：2022-06-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Jen Chang ,  Chih-Chien Chi ,  Chen-Yuan Kao ,  Hung-Wen Su ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Jun-Yi Ruan

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/8238 ,  H01L27/092

摘要： A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US20210074581A1

公开(公告)日：2021-03-11

申请号：US17099263

申请日：2020-11-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng Chou ,  Chih-Chien Chi ,  Chung-Chi Ko ,  Yao-Jen Chang ,  Chen-Yuan Kao ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Tze-Liang Lee ,  Jun-Yi Ruan

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L29/78

摘要： A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US20230369500A1

公开(公告)日：2023-11-16

申请号：US18360344

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Jen Chang ,  Chih-Chien Chi ,  Chen-Yuan Kao ,  Hung-Wen Su ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Jun-Yi Ruan

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L27/092 ,  H01L21/8238

CPC分类号： H01L29/7851 ,  H01L29/66545 ,  H01L29/66795 ,  H01L21/76816 ,  H01L23/5329 ,  H01L23/528 ,  H01L23/5226 ,  H01L21/76804 ,  H01L27/0924 ,  H01L21/823821

摘要： A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US11777035B2

公开(公告)日：2023-10-03

申请号：US17849995

申请日：2022-06-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Jen Chang ,  Chih-Chien Chi ,  Chen-Yuan Kao ,  Hung-Wen Su ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Jun-Yi Ruan

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L29/7851 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/823821 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/0924 ,  H01L29/66545 ,  H01L29/66795

摘要： A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US11374127B2

公开(公告)日：2022-06-28

申请号：US16939199

申请日：2020-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Jen Chang ,  Chih-Chien Chi ,  Chen-Yuan Kao ,  Hung-Wen Su ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Jun-Yi Ruan

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/8238 ,  H01L27/092

摘要： A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US11328952B2

公开(公告)日：2022-05-10

申请号：US17099263

申请日：2020-11-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng Chou ,  Chih-Chien Chi ,  Chung-Chi Ko ,  Yao-Jen Chang ,  Chen-Yuan Kao ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Tze-Liang Lee ,  Jun-Yi Ruan

IPC分类号： H01L21/768 ,  H01L21/8234 ,  H01L23/532 ,  H01L21/84 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L29/78 ,  H01L29/08

摘要： A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.