公开(公告)号：US20200144063A1

公开(公告)日：2020-05-07

申请号：US16730343

申请日：2019-12-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ling LEE ,  Shing-Chyang PAN ,  Keng-Chu LIN ,  Wen-Cheng YANG ,  Chih-Tsung LEE ,  Victor Y. LU

IPC: H01L21/285 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

公开(公告)号：US20150132913A1

公开(公告)日：2015-05-14

申请号：US14080220

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Min-Hao HONG ,  Shiu-Ko JANGJIAN ,  Chih-Tsung LEE ,  Miao-Cheng LIAO

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7847 ,  H01L29/7848

Abstract: Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.

Abstract translation: 提供了与用于提供稳定位错图的机制有关的实施例。 提供具有栅叠层的半导体衬底。 在栅极叠层的一侧形成开口。 在开口中形成外延生长结构的第一部分。 外延生长结构的第二部分形成在开口中。 外延生长结构的第一部分和第二部分沿着不同的方向形成。

公开(公告)号：US20240404857A1

公开(公告)日：2024-12-05

申请号：US18412310

申请日：2024-01-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hao LIAO ,  Pei-Yu LEE ,  Chih-Tsung LEE ,  Cheng-Lung WU ,  Jiun-Rong PAI

IPC: H01L21/677 ,  H01L21/324 ,  H01L21/673

Abstract: Base plates of a substrate retainer transportation mechanism are provided with damping members to assist elastic members in damping and limiting movement of the substrate retainer transportation mechanism when the substrate transportation mechanism is subjected to unwanted external forces, e.g., seismic forces. By damping and limiting movement of the substrate retainer transportation mechanism, undesirable damage to substrates contained in a substrate retainer being carried by the substrate retainer transport mechanism can be minimized.

公开(公告)号：US20180166285A1

公开(公告)日：2018-06-14

申请号：US15730934

申请日：2017-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling LEE ,  Shing-Chyang PAN ,  Keng-Chu LIN ,  Wen-Cheng YANG ,  Chih-Tsung LEE ,  Victor Y. LU

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/8234

CPC classification number: H01L21/2855 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/3065 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/823437

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.