公开(公告)号：US20180269082A1

公开(公告)日：2018-09-20

申请号：US15920956

申请日：2018-03-14

Applicant: Toshiba Memory Corporation

Inventor： Yasuhito Yoshimizu ,  Yuya Akeboshi ,  Fuyuma Ito ,  Hakuba Kitagawa

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67075 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139 ,  H01L21/67046 ,  H01L21/6708 ,  H01L21/67086

Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

公开(公告)号：US10529588B2

公开(公告)日：2020-01-07

申请号：US16012866

申请日：2018-06-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya Akeboshi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/3213 ,  H01L21/67 ,  C23F1/40

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

公开(公告)号：US10008400B2

公开(公告)日：2018-06-26

申请号：US15449308

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  H01L21/3213

CPC classification number: H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US09991159B2

公开(公告)日：2018-06-05

申请号：US15449233

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fuyuma Ito ,  Yasuhito Yoshimizu ,  Yuya Akeboshi ,  Hisashi Okuchi ,  Masayuki Kitamura

IPC: H01L21/768 ,  H01L21/027 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/0272 ,  H01L21/0273 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved. The method includes removing the catalyst layer on the sacrificial film while leaving the catalyst layer on the base of the second groove unremoved. The method includes forming a second metal film in the second groove by the plating.

公开(公告)号：US10403524B2

公开(公告)日：2019-09-03

申请号：US15989887

申请日：2018-05-25

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  C23F1/26

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US20190035636A1

公开(公告)日：2019-01-31

申请号：US16028574

申请日：2018-07-06

Applicant: Toshiba Memory Corporation

Inventor： Yasuhito Yoshimizu ,  Hiroyuki Yasui ,  Yuya Akeboshi ,  Fuyuma Ito

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

Abstract: A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

公开(公告)号：US10014186B2

公开(公告)日：2018-07-03

申请号：US14989241

申请日：2016-01-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya Akeboshi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/67 ,  C23F1/40

CPC classification number: H01L21/32134 ,  C23F1/40 ,  H01L21/67075 ,  H01L21/6708

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.