- 专利标题： Substrate treatment method and substrate treatment apparatus
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申请号： US16012866申请日： 2018-06-20
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公开(公告)号： US10529588B2公开(公告)日： 2020-01-07
- 发明人: Yuya Akeboshi , Hiroshi Tomita , Hisashi Okuchi , Yasuhito Yoshimizu , Hiroaki Yamada
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2015-111556 20150601
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/67 ; C23F1/40
摘要：
In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.
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