公开(公告)号：US11784070B2

公开(公告)日：2023-10-10

申请号：US16852475

申请日：2020-04-18

申请人： Tokyo Electron Limited

发明人： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC分类号： H01L21/67 ,  C23C16/46 ,  C23C16/34 ,  C23C16/52 ,  H01L21/02 ,  H01L21/673

CPC分类号： H01L21/67248 ,  C23C16/345 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02269 ,  H01L21/67109 ,  H01L21/67303

摘要： A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

公开(公告)号：US11674224B2

公开(公告)日：2023-06-13

申请号：US16852478

申请日：2020-04-19

申请人： Tokyo electron limited

发明人： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/34

CPC分类号： C23C16/45527 ,  C23C16/345 ,  C23C16/4583

摘要： A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

公开(公告)号：US11569098B2

公开(公告)日：2023-01-31

申请号：US16398547

申请日：2019-04-30

申请人： Tokyo Electron Limited

发明人： Tatsuya Yamaguchi ,  Yasuaki Kikuchi

IPC分类号： F24D11/00 ,  H01L21/67 ,  F26B23/06

摘要： A heat treatment apparatus includes: a processing container extended in a vertical direction; and a heater provided to surround the processing container. The heater includes: a first insulator of a cylindrical shape that has a ceiling surface and an opening at a lower end; a heat generator provided along a circumferential direction on an inner circumferential side of the first insulating member; and a second insulator arranged along the circumferential direction of the first insulating member at a position adjacent to the heat generating elements.

公开(公告)号：US11258023B1

公开(公告)日：2022-02-22

申请号：US16985657

申请日：2020-08-05

申请人： Nantero, Inc. ,  TOKYO ELECTRON LIMITED

发明人： Mark Ramsbey ,  Thomas Rueckes ,  Tatsuya Yamaguchi ,  Syuji Nozawa ,  Nagisa Sato

IPC分类号： H01L21/764 ,  H01L51/10 ,  H01L51/00 ,  H01L27/28 ,  H01L51/05

摘要： A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

公开(公告)号：US20190341281A1

公开(公告)日：2019-11-07

申请号：US16398547

申请日：2019-04-30

申请人： Tokyo Electron Limited

发明人： Tatsuya Yamaguchi ,  Yasuaki Kikuchi

IPC分类号： H01L21/67 ,  F26B23/06

摘要： A heat treatment apparatus includes: a processing container extended in a vertical direction; and a heater provided to surround the processing container. The heater includes: a first insulator of a cylindrical shape that has a ceiling surface and an opening at a lower end; a heat generator provided along a circumferential direction on an inner circumferential side of the first insulating member; and a second insulator arranged along the circumferential direction of the first insulating member at a position adjacent to the heat generating elements.

公开(公告)号：US20180197759A1

公开(公告)日：2018-07-12

申请号：US15864299

申请日：2018-01-08

申请人： Tokyo Electron Limited

发明人： Tatsuya Yamaguchi ,  Kazuteru Obara ,  Yasuaki Kikuchi ,  Koji Yoshii

IPC分类号： H01L21/67

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： Disclosed is a heat treatment apparatus including: a processing container configured to accommodate a substrate; a furnace body having a heater configured to heat the substrate accommodated in the processing container and provided around the processing container; a blower configured to supply a coolant to a space between the processing container and the furnace body; and a controller having a continuous operation mode in which the blower is continuously energized and an intermittent operation mode in which energization and de-energization of the blower are repeated, and configured to control driving of the blower based on an instruction voltage. The controller drives the blower in the intermittent operation mode when the instruction voltage is higher than 0 V and lower than a predetermined threshold voltage.

公开(公告)号：US20180158693A1

公开(公告)日：2018-06-07

申请号：US15831831

申请日：2017-12-05

申请人： TOKYO ELECTRON LIMITED

发明人： Koichi Yatsuda ,  Takashi Hayakawa ,  Tatsuya Yamaguchi

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76832 ,  H01L23/5329

摘要： There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer.

公开(公告)号：US09909809B2

公开(公告)日：2018-03-06

申请号：US13742599

申请日：2013-01-16

申请人： TOKYO ELECTRON LIMITED

发明人： Goro Takahashi ,  Takanori Saito ,  Wenling Wang ,  Koji Yoshii ,  Tatsuya Yamaguchi

IPC分类号： A21B1/22 ,  H05B1/02 ,  A21B1/00 ,  F27D19/00 ,  F27D21/00 ,  F27B17/00 ,  H01L21/67

CPC分类号： F27D19/00 ,  F27B17/0025 ,  F27D21/0014 ,  H01L21/67109 ,  H01L21/67248

摘要： The heat treatment apparatus includes: a processing chamber which accommodates a processing object; a heating unit which heats the processing object accommodated in the processing chamber; a temperature detecting unit which detects an internal temperature of the processing chamber; and a controller which sets a second setting temperature identical to as a temperature detected by the temperature detecting unit when the temperature detected by the temperature detecting unit falls below a predetermined first setting temperature due to an external disturbance; controls the heating unit so that a third setting temperature between the second setting temperature and the first setting temperature becomes identical to the temperature detected by the temperature detecting unit; and controls the heating unit so that the first setting temperature becomes identical to the temperature detected by the temperature detecting unit after the third setting temperature becomes identical to the temperature detected by the temperature detecting unit.

公开(公告)号：US09708507B2

公开(公告)日：2017-07-18

申请号：US14632311

申请日：2015-02-26

申请人： TOKYO ELECTRON LIMITED

发明人： Kippei Sugita ,  Tatsuya Yamaguchi ,  Yoshinori Morisada ,  Makoto Fujikawa

IPC分类号： C09D179/08 ,  H01L21/67 ,  C08G73/10 ,  C23C16/30 ,  C23C16/56 ,  H01L21/3105 ,  B05D1/00 ,  B05D3/02 ,  H01L21/3065 ,  H01L21/02

CPC分类号： C09D179/08 ,  B05D1/60 ,  B05D3/0254 ,  C08G73/105 ,  C08G73/1071 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02063 ,  H01L21/3065 ,  H01L21/31058 ,  H01L21/67109

摘要： A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.

公开(公告)号：US20160363373A1

公开(公告)日：2016-12-15

申请号：US15172368

申请日：2016-06-03

申请人： Tokyo Electron Limited

发明人： Yuto Noda ,  Tatsuya Yamaguchi ,  Masayoshi Masunaga ,  Koji Yoshii

IPC分类号： F27D19/00 ,  G06N3/12 ,  G05B13/04 ,  F27B1/10 ,  F27B1/02

CPC分类号： F27D19/00 ,  F27B1/02 ,  F27B1/10 ,  F27B17/0025 ,  F27D2019/0096 ,  G05B13/042 ,  G06N3/126 ,  H01L21/67109 ,  H01L21/67248

摘要： The controller receives information including a plurality of evaluation indexes, a weight of each evaluation index, the number of times for calculating a value of an evaluation function, and initial parameter values, and performs a simulation based on the received information. Then, the controller calculates a value of an evaluation function based on a result of the simulation, and determines whether the calculated value of the evaluation function is minimum, to update parameters when it is determined that the value of the evaluation function is minimum. In the calculation of a value of the evaluation function, a value of the evaluation function is calculated again based on the number of times for calculating a value of an evaluation function. The controller generates new parameters by a genetic algorithm when a value of an evaluation function is calculated again.

摘要翻译： 控制器接收包括多个评价指标的信息，各评价指标的权重，用于计算评价函数的值的次数和初始参数值，并且基于接收到的信息进行模拟。 然后，控制器基于模拟结果计算评估函数的值，并且确定评估函数的计算值是否最小，以便在确定评估函数的值最小时更新参数。 在计算评价函数的值时，基于计算评价函数的值的次数再次计算评价函数的值。 当再次计算评估函数的值时，控制器通过遗传算法生成新参数。