公开(公告)号：US09653555B2

公开(公告)日：2017-05-16

申请号：US15041144

申请日：2016-02-11

申请人： TOKYO ELECTRON LIMITED

发明人： Youichirou Chiba ,  Takumi Yamada ,  Daisuke Suzuki

IPC分类号： H01L21/20 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/3215

CPC分类号： H01L29/401 ,  C30B25/00 ,  H01L21/223 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/32155 ,  H01L21/3247

摘要： A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

公开(公告)号：US09865467B2

公开(公告)日：2018-01-09

申请号：US14919381

申请日：2015-10-21

申请人： TOKYO ELECTRON LIMITED

发明人： Daisuke Suzuki ,  Youichirou Chiba ,  Takumi Yamada

IPC分类号： H01L21/285 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/768 ,  C30B1/02 ,  C30B29/06 ,  C30B29/08 ,  H01L21/74 ,  C23C16/04

CPC分类号： H01L21/28525 ,  C23C16/045 ,  C30B1/023 ,  C30B29/06 ,  C30B29/08 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/743 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879

摘要： There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface defining a recess in a semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess.

公开(公告)号：US09646879B2

公开(公告)日：2017-05-09

申请号：US14582243

申请日：2014-12-24

申请人： TOKYO ELECTRON LIMITED

发明人： Akinobu Kakimoto ,  Youichirou Chiba ,  Takumi Yamada ,  Daisuke Suzuki

IPC分类号： H01L21/768 ,  H01L21/285 ,  C30B1/02 ,  C30B29/06 ,  H01L21/67 ,  H01L21/02 ,  C30B25/00

CPC分类号： H01L21/76877 ,  C30B1/023 ,  C30B25/00 ,  C30B29/06 ,  H01L21/02667 ,  H01L21/28525 ,  H01L21/28531 ,  H01L21/67109 ,  H01L21/76879

摘要： A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.