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公开(公告)号：US11919032B2
公开(公告)日：2024-03-05
申请号：US17458691
申请日：2021-08-27
IPC分类号： B05C5/02 , B05C11/10 , B05C17/005 , C23C14/00 , C23C16/455
CPC分类号： B05C5/02 , B05C11/1013 , B05C17/00536 , C23C14/0042 , C23C14/0063 , C23C16/45557
摘要： A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
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2.发明授权公开(公告)号：US11613432B2
公开(公告)日：2023-03-28
申请号：US17186932
申请日：2021-02-26
发明人： Kazuki Moyama , Kazuya Nagaseki , Toshiya Matsuda
摘要： A method includes estimating a replacement time of a consumable part of a processing device, specifying a timing after substrate processing of the processing device is completed in a period before the replacement time as a replaceable timing of the consumable part, estimating a movement time period required for the part transporting device to move to a position of the processing device requiring the replacement, and estimating a preparation time period required for preparation until the part transporting device moved to the position of the processing device requiring the replacement becomes a state in which the consumable part is replaceable. The method further includes transmitting a replacement instruction to the part transporting device at a timing before a timing that is earlier than the replaceable timing by a total time of the movement time period and the preparation time period, and instructing the replacement of the consumable part.
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公开(公告)号：US11387077B2
公开(公告)日：2022-07-12
申请号：US17102444
申请日：2020-11-24
发明人： Shinji Kubota , Kazuya Nagaseki , Shinji Himori , Koichi Nagami
IPC分类号： H01J37/32
摘要： A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.
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公开(公告)号：US10553407B2
公开(公告)日：2020-02-04
申请号：US16104512
申请日：2018-08-17
发明人： Koichi Nagami , Kazunobu Fujiwara , Tatsuro Ohshita , Takashi Dokan , Koji Maruyama , Kazuya Nagaseki , Shinji Himori
IPC分类号： H01J37/32
摘要： A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.
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公开(公告)号：US09978566B2
公开(公告)日：2018-05-22
申请号：US15288205
申请日：2016-10-07
发明人： Akihiro Yokota , Shinji Himori , Tatsuro Ohshita , Shu Kusano , Etsuji Ito , Kazuya Nagaseki
CPC分类号： H01J37/32669 , H01J37/32091 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/31116 , H01L21/67069
摘要： Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.
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公开(公告)号：US08895454B2
公开(公告)日：2014-11-25
申请号：US14158981
申请日：2014-01-20
发明人： Shinji Himori , Etsuji Ito , Akihiro Yokota , Shu Kusano , Hiroaki Ishizuka , Kazuya Nagaseki
IPC分类号： H01L21/302 , H01L21/311
CPC分类号： H01L21/31116 , H01J37/32165 , H01J37/3266 , H01J37/32669 , H01L21/3081 , H01L21/31138
摘要： In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.
摘要翻译： 在包括第一氧化物膜和第二氧化物膜的多层膜的蚀刻方法中，蚀刻有机膜中的高频功率被设定为高于蚀刻第一和第二氧化物膜时的高频功率，并且高频偏置功率 将第一和第二氧化物膜的蚀刻设定为高于蚀刻有机膜时的蚀刻。 在第一和第二氧化物膜和有机膜的蚀刻中，产生磁场，使得相对于目标物体的中心轴线的径向的水平磁场分量具有峰值在 远离中心轴线的位置，并且有机膜的蚀刻中的峰值位置更靠近中心轴线。
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公开(公告)号：US20140206199A1
公开(公告)日：2014-07-24
申请号：US14158981
申请日：2014-01-20
发明人： Shinji Himori , Etsuji Ito , Akihiro Yokota , Shu KUSANO , Hiroaki Ishizuka , Kazuya Nagaseki
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32165 , H01J37/3266 , H01J37/32669 , H01L21/3081 , H01L21/31138
摘要： In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.
摘要翻译： 在包括第一氧化物膜和第二氧化物膜的多层膜的蚀刻方法中，蚀刻有机膜中的高频功率被设定为高于蚀刻第一和第二氧化物膜时的高频功率，并且高频偏置功率 将第一和第二氧化物膜的蚀刻设定为高于蚀刻有机膜时的蚀刻。 在第一和第二氧化物膜和有机膜的蚀刻中，产生磁场，使得相对于目标物体的中心轴线的径向的水平磁场分量具有峰值在 远离中心轴线的位置，并且有机膜的蚀刻中的峰值位置更靠近中心轴线。
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公开(公告)号：US11981993B2
公开(公告)日：2024-05-14
申请号：US16646277
申请日：2019-05-10
发明人： Michishige Saito , Kazuya Nagaseki , Shota Kaneko
IPC分类号： C23C16/44 , B23K26/144 , B23K26/34 , B33Y10/00 , B33Y50/00 , B33Y80/00 , C23C16/48 , H01J37/32
CPC分类号： C23C16/4404 , B23K26/144 , B23K26/34 , B33Y10/00 , B33Y80/00 , C23C16/44 , C23C16/483 , C23C16/487 , H01J37/32477 , H01J37/32642 , H01J37/32935 , B33Y50/00 , H01J2237/332 , H01J2237/334
摘要： A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.
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公开(公告)号：US11315770B2
公开(公告)日：2022-04-26
申请号：US16205558
申请日：2018-11-30
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32 , C23C16/52 , H01L21/67 , H01L21/673
摘要： An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.
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公开(公告)号：US11043389B2
公开(公告)日：2021-06-22
申请号：US16881073
申请日：2020-05-22
发明人： Kazuki Moyama , Kazuya Nagaseki
IPC分类号： H01L21/3065
摘要： A substrate processing method includes a first expanding step, a first gas supplying step, a first plasma processing step, and a first power stopping step. The first expanding step increases the volume of a gas diffusion chamber. The first gas supplying step supplies a first gas into the gas diffusion chamber. The first plasma processing step supplies radio-frequency power from a radio-frequency power supply to generate plasma in a processing chamber accommodating a substrate and reduces the volume of the gas diffusion chamber. The first power stopping step stops the supply of the radio-frequency power after the first plasma processing step.
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