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公开(公告)号：US20230282446A1
公开(公告)日：2023-09-07
申请号：US17649823
申请日：2022-02-03
发明人： Yohei Yamazawa , Kazuki Moyama , Barton Lane , Merritt Funk
IPC分类号： H01J37/32
CPC分类号： H01J37/3211 , H01J37/32577
摘要： An antenna includes an inner structure, an outer structure, and a plurality of interconnecting structures coupling the inner structure to the outer structure. The plurality of interconnecting structures is axisymmetric with respect to a center of the antenna. Each interconnecting structure has an azimuthal component of at least 30 degrees.
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公开(公告)号：US11315770B2
公开(公告)日：2022-04-26
申请号：US16205558
申请日：2018-11-30
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32 , C23C16/52 , H01L21/67 , H01L21/673
摘要： An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.
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公开(公告)号：US11043389B2
公开(公告)日：2021-06-22
申请号：US16881073
申请日：2020-05-22
发明人： Kazuki Moyama , Kazuya Nagaseki
IPC分类号： H01L21/3065
摘要： A substrate processing method includes a first expanding step, a first gas supplying step, a first plasma processing step, and a first power stopping step. The first expanding step increases the volume of a gas diffusion chamber. The first gas supplying step supplies a first gas into the gas diffusion chamber. The first plasma processing step supplies radio-frequency power from a radio-frequency power supply to generate plasma in a processing chamber accommodating a substrate and reduces the volume of the gas diffusion chamber. The first power stopping step stops the supply of the radio-frequency power after the first plasma processing step.
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公开(公告)号：US11050394B2
公开(公告)日：2021-06-29
申请号：US16441517
申请日：2019-06-14
发明人： Chelsea DuBose , Merritt Funk , Justin Moses , Kazuki Moyama , Kazushi Kaneko
摘要： Embodiments are described for modules, multi-stage systems, and related methods for radio frequency (RF) power amplifiers with reduced size and weight requirements. Fluid cooling is incorporated directly into the power amplifier (PA) module design rather than requiring PA modules to be mounted on separate cooling devices. For one embodiment, a PA module includes a circuit board, RF circuit components, a ground plane, and a cooling plate having one or more cooling channels to receive a cooling fluid. The cooling channels are positioned to dissipate heat from the RF circuit components through the ground plane. For a further embodiment, the PA module also includes RF bias and power electronics within a housing for the PA module without requiring an external control board or power conversion electronics. Also disclosed are multi-stage PA systems having a plurality of PA modules that are similarly cooled using cooling channels.
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公开(公告)号：US11041241B2
公开(公告)日：2021-06-22
申请号：US16432207
申请日：2019-06-05
发明人： Akihiro Yokota , Kazuki Moyama , Koji Maruyama
IPC分类号： C23C16/455 , H01J37/32 , H01L21/67
摘要： A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.
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公开(公告)号：US20210343504A1
公开(公告)日：2021-11-04
申请号：US17374857
申请日：2021-07-13
发明人： Merritt Funk , Chelsea Dubose , Justin Moses , Kazuki Moyama , Kazushi Kaneko
摘要： Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.
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公开(公告)号：US09892951B2
公开(公告)日：2018-02-13
申请号：US14387654
申请日：2012-11-07
发明人： Takehiro Tanikawa , Kazuki Moyama
IPC分类号： B08B9/00 , H01L21/683 , H01J37/32 , C23C16/44 , H01L21/3213
CPC分类号： H01L21/6831 , C23C16/4401 , H01J37/32192 , H01J37/32642 , H01J37/32715 , H01J37/32862 , H01L21/32137 , Y10T29/49998
摘要： A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.
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8.发明授权公开(公告)号：US09048070B2
公开(公告)日：2015-06-02
申请号：US14357155
申请日：2012-11-08
发明人： Caizhong Tian , Naoki Matsumoto , Koji Koyama , Naoki Mihara , Kazuki Takahashi , Jun Yoshikawa , Kazuki Moyama , Takehiro Tanikawa
CPC分类号： H01J37/32238
摘要： A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.
摘要翻译： 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。
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公开(公告)号：US11699573B2
公开(公告)日：2023-07-11
申请号：US17394783
申请日：2021-08-05
发明人： Kazuki Moyama , Kazuya Nagaseki
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32834 , H01L21/3065 , H01L21/67069 , H01J2237/334
摘要： A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.
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公开(公告)号：US11107663B2
公开(公告)日：2021-08-31
申请号：US16270811
申请日：2019-02-08
发明人： Kazuki Moyama , Kazuya Nagaseki
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065
摘要： A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.
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