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    ORGANIC SOLAR CELL AND PHOTODETECTOR MATERIALS AND DEVICES
    3.
    发明申请
    ORGANIC SOLAR CELL AND PHOTODETECTOR MATERIALS AND DEVICES 审中-公开

    公开(公告)号：US20200328357A1

    公开(公告)日：2020-10-15

    申请号：US16792000

    申请日：2020-02-14

    Applicant: The Regents of the University of California

    Inventor： Jaewon Lee ,  Soe-Jin Ko ,  Jianfei Huang ,  Martin Seifrid ,  Hengbin Wang ,  Thuc-Quyen Nguyen ,  Guillermo C. Bazan

    IPC: H01L51/00 ,  C07D495/04

    Abstract: Narrow bandgap n-type small molecules are attracting attention in the near-infrared organic optoelectronics field, due to their easy tunable energy band with a molecular design flexibility. However, only a few reports demonstrate narrow bandgap non-fullerene acceptors (NFAs) that perform well in organic solar cells (OSCs), and the corresponding benefits of NFA photodiodes have not been well investigated in organic photodetectors (OPDs). Here, the ultra-narrow bandgap NFAs CO1-4F, CO1-4Cl and o-IO1 were designed and synthesized for the achieved efficient near-infrared organic photodiodes such as solar cells and photodetectors. Designing an asymmetrical CO1-4F by introducing two different π-bridges including alkylthienyl and alkoxythienyl units ultimately provides an asymmetric A-D′-D-D″-A molecular configuration. This enables a delicate modulation in energy band structure as well as maintains an intense intramolecular charge transfer characteristic of the excited state.

    Organic semiconductor solution blends for switching ambipolar transport to N-type transport
    5.
    发明授权
    Organic semiconductor solution blends for switching ambipolar transport to N-type transport 有权

    公开(公告)号：US10559754B2

    公开(公告)日：2020-02-11

    申请号：US15599816

    申请日：2017-05-19

    Applicant: The Regents of the University of California

    Inventor： Michael J. Ford ,  Hengbin Wang ,  Guillermo C. Bazan

    IPC: H01L51/00 ,  C07D521/00 ,  H01L51/05

    Abstract: The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition of matter useful as a current transport region in an organic semiconductor device comprises a semiconducting polymer; and means for accepting holes (e.g., a hole trapping compound) injected into the current transport region so as to impede conduction of the holes in the semiconducting polymer. This simple solution-processable method can improve the on and off current ratios (ION/IOFF) of OFETs by up to three orders of magnitude. Moreover, the treatment yields tailored blends that can be used to fabricate complementary inverters with excellent gain and low-power characteristics.

    DOPING PREFERENCES IN CONJUGATED POLYELECTROLYTE/SINGLE-WALLED CARBON NANOTUBE COMPOSITES
    8.
    发明申请
    DOPING PREFERENCES IN CONJUGATED POLYELECTROLYTE/SINGLE-WALLED CARBON NANOTUBE COMPOSITES 审中-公开
    结合聚电解质/单壁碳纳米管复合材料的掺杂优选

    公开(公告)号：US20170069814A1

    公开(公告)日：2017-03-09

    申请号：US15256215

    申请日：2016-09-02

    Applicant: The Regents of the University of California

    Inventor： Guillermo C. Bazan ,  Cheng-Kang Mai

    IPC: H01L35/24 ,  H01L35/04

    CPC classification number: H01L35/24 ,  H01L35/04

    Abstract: A method of fabricating a doped composite including combining one or more carbon nanotubes with one or more Conjugated Polyelectrolytes (CPEs) to form a composite, wherein charge transfers between one or more of the CPEs and one or more of the carbon nanotubes, and the CPEs and/or a relative content of the carbon nanotubes in the composite are selected to obtain the composite that is n-type or p-type doped.

    Abstract translation: 一种制造掺杂复合物的方法，包括将一个或多个碳纳米管与一种或多种共轭聚电解质（CPE）组合以形成复合材料，其中电荷在一个或多个CPE和一个或多个碳纳米管和CPE之间转移 和/或复合材料中碳纳米管的相对含量，以获得n型或p型掺杂的复合材料。

    HIGH MOBILITY POLYMER ORGANIC FIELD-EFFECT TRANSISTORS BY BLADE-COATING SEMICONDUCTOR:INSULATOR BLEND SOLUTIONS
    9.
    发明申请
    HIGH MOBILITY POLYMER ORGANIC FIELD-EFFECT TRANSISTORS BY BLADE-COATING SEMICONDUCTOR:INSULATOR BLEND SOLUTIONS 审中-公开
    刀片式半导体高移动聚合物有机场效应晶体管：绝缘子混合解决方案

    公开(公告)号：US20170054096A1

    公开(公告)日：2017-02-23

    申请号：US15241949

    申请日：2016-08-19

    Applicant: The Regents of the University of California

    Inventor： Michael J. Ford ,  Guillermo C. Bazan

    IPC: H01L51/05 ,  C08G61/12 ,  H01L51/00

    CPC classification number: H01L51/0558 ,  C08G61/123 ,  C08G61/126 ,  C08G2261/12 ,  C08G2261/13 ,  C08G2261/1412 ,  C08G2261/1646 ,  C08G2261/18 ,  C08G2261/212 ,  C08G2261/228 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/51 ,  C08G2261/92 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097

    Abstract: Conjugated polymer-based organic field-effect transistors have garnered attention since the solution processability of the semiconductor material raises the possibility of lower device fabrication costs, and considerable progress has been made on achieving high mobility systems. Further improvements in charge carrier mobility while using non-specialized deposition techniques and minimizing the volume of semiconductor used in the fabrication process are important considerations for practical implementation. Here, a method of fabricating devices is disclosed that uses a technique (for example, a scalable blade-coating technique) to cast polymer thin film devices from blend solutions with one component being the polymer semiconductor and the other being a commodity polymer. Even when mixing the semiconducting polymer with 90% polystyrene by weight, an average mobility of 2.7±0.4 cm2V−1s−1 can be obtained.

    Abstract translation: 共轭聚合物基有机场效应晶体管已经引起关注，因为半导体材料的溶解加工性提高了器件制造成本降低的可能性，并且在实现高移动性系统方面取得了相当大的进展。 在使用非专门的沉积技术并最小化制造工艺中使用的半导体的体积的情况下，电荷载流子迁移率的进一步改进是实际实现的重要考虑因素。 这里，公开了一种制造器件的方法，其使用技术（例如，可扩展的刀片涂覆技术）从混合溶液浇铸聚合物薄膜器件，其中一种成分是聚合物半导体，另一种是商品聚合物。 即使将半导体聚合物与90重量％聚苯乙烯混合，也可获得平均迁移率为2.7±0.4 cm2V-1s-1。

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