公开(公告)号：US11118266B2

公开(公告)日：2021-09-14

申请号：US16189660

申请日：2018-11-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: C23C16/44 ,  C23C16/455 ,  H01L51/56 ,  C23C16/505 ,  H01L33/44 ,  H01L33/00 ,  H01L33/02 ,  H01L51/52 ,  C23C16/34 ,  C23C16/40

Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

公开(公告)号：US20190081283A1

公开(公告)日：2019-03-14

申请号：US16189452

申请日：2018-11-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: H01L51/56 ,  H01L51/52

CPC classification number: H01L51/56 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5256

Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

公开(公告)号：US10777777B2

公开(公告)日：2020-09-15

申请号：US16124475

申请日：2018-09-07

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: H01L21/00 ,  H01L51/56 ,  H01L51/52

Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

公开(公告)号：US10461282B2

公开(公告)日：2019-10-29

申请号：US16189452

申请日：2018-11-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: H01L51/40 ,  H01L51/56 ,  H01L51/52 ,  H01L21/02

Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

公开(公告)号：US20190186001A1

公开(公告)日：2019-06-20

申请号：US16219256

申请日：2018-12-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4408 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/545

Abstract: A thin film deposition apparatus is provided. The thin film deposition apparatus prevents powders from being generated by a gas supply unit for supplying process gas when a thin film is deposited by atomic layer deposition (ALD).

公开(公告)号：US20150243834A1

公开(公告)日：2015-08-27

申请号：US14707795

申请日：2015-05-08

Applicant: TES, Co., Ltd.

Inventor： Hong-Jae Lee

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/02168 ,  H01L21/02532 ,  H01L21/02697 ,  H01L21/2633 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1888 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes.

Abstract translation: 提供了一种太阳能电池模块，其包括晶体硅晶片，至少一个非晶硅层，设置在晶体硅晶片的顶部和底部中的至少一个上，设置在至少一个非晶硅层的表面上的透明导电膜 设置在所述透明导电膜的表面上的电极以及将所述透明导电膜分割为通电区域和非通电区域的分割单元，其中所述载流区域与所述电极电连接， 非通电区域与电极电断开。

公开(公告)号：US20190078208A1

公开(公告)日：2019-03-14

申请号：US16189660

申请日：2018-11-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  H01L51/52 ,  H01L33/00 ,  H01L33/12

Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

公开(公告)号：US20190019996A1

公开(公告)日：2019-01-17

申请号：US16124475

申请日：2018-09-07

Applicant: TES CO., LTD.

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: H01L51/56 ,  H01L51/52

Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

公开(公告)号：US09515201B2

公开(公告)日：2016-12-06

申请号：US14707795

申请日：2015-05-08

Applicant: TES, Co., Ltd.

Inventor： Hong-Jae Lee

IPC: H01L31/18 ,  H01L31/20 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/072 ,  H01L31/0725 ,  H01L21/20 ,  H01L21/268 ,  H01L21/263 ,  H01L21/02 ,  H01L31/0747 ,  H01L31/0236

CPC classification number: H01L31/02168 ,  H01L21/02532 ,  H01L21/02697 ,  H01L21/2633 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1888 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes.

Abstract translation: 提供了一种太阳能电池模块，其包括晶体硅晶片，至少一个非晶硅层，设置在晶体硅晶片的顶部和底部中的至少一个上，设置在至少一个非晶硅层的表面上的透明导电膜 设置在所述透明导电膜的表面上的电极以及将所述透明导电膜分割为通电区域和非通电区域的分割单元，其中所述载流区域与所述电极电连接， 非通电区域与电极电断开。