公开(公告)号：US11031291B2

公开(公告)日：2021-06-08

申请号：US16373235

申请日：2019-04-02

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： I-Ming Chang ,  Chung-Liang Cheng ,  Hsiang-Pi Chang ,  Hung-Chang Sun ,  Yao-Sheng Huang ,  Yu-Wei Lu ,  Fang-Wei Lee ,  Ziwei Fang ,  Huang-Lin Chao

IPC分类号： H01L21/8234 ,  H01L21/324 ,  H01L27/088 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L21/02 ,  H01L29/423 ,  H01L21/8238

摘要： A semiconductor structure includes a substrate including a first region and a second region, a first channel layer disposed in the first region and a second channel layer disposed in the second region, a first dielectric layer disposed on the first channel layer and a second dielectric layer disposed on the second channel layer, and a first gate electrode disposed on the first dielectric layer and a second gate electrode disposed on the second dielectric layer. The first channel layer in the first region includes Ge compound of a first Ge concentration, the second channel layer in the second region includes Ge compound of a second Ge concentration. The first Ge concentration in the first channel layer is greater than the second Ge concentration in the second channel layer.

公开(公告)号：US20230402506A1

公开(公告)日：2023-12-14

申请号：US17827779

申请日：2022-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yi-Ruei Jhan ,  Kuan-Ting Pan ,  Yu-Wei Lu ,  Shi-Ning Ju ,  Kuo-Cheng Chiang ,  Chih-Hao Wang

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8234

CPC分类号： H01L29/0673 ,  H01L29/42392 ,  H01L29/0649 ,  H01L29/775 ,  H01L29/66439 ,  H01L21/823468 ,  H01L29/78696 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L29/78618

摘要： Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a semiconductor device. The semiconductor device includes a substrate including a plurality of fins, a plurality of semiconductor nanosheets stacked on the plurality of fins, a plurality of gate stacks wrapping the plurality of semiconductor nanosheets, an isolation structure around the plurality of fins, and a separator structure on the isolation structure to separate the plurality of gate stacks from each other. The separator structure includes a body and a cap on the body. The cap includes a first portion and a second portion. Sidewalls and bottom of the second portion is wrapped by the first portion.

公开(公告)号：US11842927B2

公开(公告)日：2023-12-12

申请号：US17330272

申请日：2021-05-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： I-Ming Chang ,  Chung-Liang Cheng ,  Hsiang-Pi Chang ,  Hung-Chang Sun ,  Yao-Sheng Huang ,  Yu-Wei Lu ,  Fang-Wei Lee ,  Ziwei Fang ,  Huang-Lin Chao

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L21/324 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L21/02 ,  H01L29/423 ,  H01L21/8238

CPC分类号： H01L21/823431 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/76832 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/0886 ,  H01L29/161 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor structure includes a substrate including a first region and a second region, a first channel layer disposed in the first region and a second channel layer disposed in the second region, a first dielectric layer disposed on the first channel layer and a second dielectric layer disposed on the second channel layer, and a first gate electrode disposed on the first dielectric layer and a second gate electrode disposed on the second dielectric layer. The first channel layer in the first region includes Ge compound of a first Ge concentration, the second channel layer in the second region includes Ge compound of a second Ge concentration. The first Ge concentration in the first channel layer is greater than the second Ge concentration in the second channel layer.